公开(公告)号：US11239627B2

公开(公告)日：2022-02-01

申请号：US16579800

申请日：2019-09-23

Applicant: SHENZHEN UNIVERSITY

Inventor： Peiguang Yan ,  Hao Chen ,  Jinde Yin ,  Fengfei Xing

IPC: H01S3/11 ,  H01S3/067 ,  H01S3/094 ,  H01S3/08 ,  H01S3/10 ,  H01S3/0941

Abstract: The present disclosure provides a waveguide integrated optical modulator, which is made of a bismuth film, an antimony film, or a tellurium film. A thickness of the bismuth film, the antimony film, or the tellurium film is between 10 nm and 200 nm, and the bismuth film, the antimony film, or the tellurium film is produced by physical vapor deposition method. The waveguide integrated optical modulator can directly add the symmetrical electrode on the surface of the bismuth film, the antimony film, or the tellurium film, and apply an external bias voltage of different amplitudes to the bismuth film, the antimony film, or the tellurium film by adjusting the power source. Thus, the waveguide integrated optical modulator can actively control the nonlinear optical characteristics of the saturable absorber by changing the magnitude of the external voltage, and further actively modulate the laser characteristics of the pulse.