公开(公告)号：US10707263B2

公开(公告)日：2020-07-07

申请号：US16440054

申请日：2019-06-13

Applicant: SHARP KABUSHIKI KAISHA

Inventor： Hiroyuki Kawano ,  Tomoaki Arakawa

IPC: H01L27/146 ,  G03F7/32 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38

Abstract: The thickness of an embedding film in a pixel region is adjusted without adding a step.A method of manufacturing a solid-state image sensor (100) according to an embodiment of the present invention includes a development step of removing a photosensitive material (M) in a peripheral circuit region (30) and reducing and adjusting the thickness of the photosensitive material (M) that is in a pixel region (20) and on a multilayered wiring layer (5) to a desired film thickness.