公开(公告)号：US10749080B2

公开(公告)日：2020-08-18

申请号：US16660460

申请日：2019-10-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Daewoong Suh

IPC: H01L33/44 ,  H01L23/00 ,  H01L33/24 ,  H01L33/14 ,  H01L33/10 ,  H01L33/62 ,  H01L33/54 ,  H01L33/40 ,  H01L27/15 ,  H01L33/20 ,  H01L33/38 ,  H01L25/075 ,  H01L33/08

Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.

公开(公告)号：US09859466B2

公开(公告)日：2018-01-02

申请号：US15470820

申请日：2017-03-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang

IPC: H01L27/15 ,  H01L29/22 ,  H01L21/00 ,  H01L33/24 ,  H01L33/60 ,  H01L33/40 ,  H01L33/50 ,  H01L33/46

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.

公开(公告)号：US20170365638A9

公开(公告)日：2017-12-21

申请号：US15409306

申请日：2017-01-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu Kim ,  So Ra Lee ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  Joon Sup Lee ,  Min Woo Kang ,  Se Hee Oh ,  Hyun A Kim ,  Hyoung Jin Lim

IPC: H01L27/15 ,  H01L33/36 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/36 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2924/00012

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

公开(公告)号：US09847457B2

公开(公告)日：2017-12-19

申请号：US14985162

申请日：2015-12-30

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Se Hee Oh ,  Hyun A Kim

IPC: H01L33/00 ,  H01L29/06 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/16225

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

公开(公告)号：US20170200858A1

公开(公告)日：2017-07-13

申请号：US15470820

申请日：2017-03-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang

IPC: H01L33/24 ,  H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  H01L33/40

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.

公开(公告)号：US20170092821A1

公开(公告)日：2017-03-30

申请号：US15377731

申请日：2016-12-13

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A. Kim ,  Kyoung Wan Kim ,  Chang Yeon Kim

IPC: H01L33/50 ,  H01L33/62

CPC classification number: H01L33/508 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0016

Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.

公开(公告)号：US09397269B2

公开(公告)日：2016-07-19

申请号：US14677904

申请日：2015-04-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/00 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/12 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/405 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

公开(公告)号：US09343644B2

公开(公告)日：2016-05-17

申请号：US14588878

申请日：2015-01-02

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A Kim

IPC: H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/50 ,  H01L33/44 ,  H01L33/32

CPC classification number: H01L33/62 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/405 ,  H01L33/44 ,  H01L33/507 ,  H01L2224/16 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: Provided is a light emitting diode (LED) in which a side surface of a reflective metal layer has a predetermined angle, and occurrence of cracks in a conductive barrier layer formed on the reflective metal layer can be prevented. Also, an LED module using LEDs is disclosed. A reflection pattern electrically connected to a second semiconductor layer is partially exposed by patterning a first insulating layer. Accordingly, a first pad is formed through the partially opened first pad region. Also, a conductive reflection layer electrically connected to a first semiconductor layer forms a second pad region formed by patterning a second insulating layer. A second pad is formed on the second pad region.

Abstract translation: 提供了一种发光二极管（LED），其中反射金属层的侧表面具有预定的角度，并且可以防止在形成在反射金属层上的导电阻挡层中产生裂纹。 此外，公开了一种使用LED的LED模块。 电连接到第二半导体层的反射图案通过图案化第一绝缘层而被部分地曝光。 因此，通过部分打开的第一焊盘区域形成第一焊盘。 而且，电连接到第一半导体层的导电反射层形成通过图案化第二绝缘层形成的第二焊盘区域。 在第二焊盘区域上形成第二焊盘。

公开(公告)号：US20150108525A1

公开(公告)日：2015-04-23

申请号：US14585125

申请日：2014-12-29

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon Chae ,  Jong Min Jang ,  Won Young Roh ,  Dae Woong Suh ,  Min Woo Kang ,  Joon Sub Lee ,  Hyun A. Kim

IPC: H01L33/62 ,  H01L33/48 ,  H01L33/00 ,  H01L33/60

CPC classification number: H01L33/405 ,  H01L33/005 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: Provided are a light emitting diode (LED) in which a conductive barrier layer surrounding a reflective metal layer is defined by a protective insulating layer, and a method of manufacturing the same. A reflection pattern including a reflective metal layer and a conductive barrier layer is formed on an emission structure in which a first semiconductor layer, an active layer, and a second semiconductor layer are formed. The conductive barrier layer prevents diffusion of a reflective metal layer and extends to a protective insulating layer recessed under a photoresist pattern having an overhang structure during a forming process. Accordingly, a phenomenon where the conductive barrier layer is in contact with sidewalls of the photoresist pattern having an over-hang structure and the reflective metal layer forms points is prevented. Thus, LED modules having various shapes may be manufactured.

Abstract translation: 提供了一种发光二极管（LED）及其制造方法，其中围绕反射金属层的导电阻挡层由保护绝缘层限定。 在其中形成第一半导体层，有源层和第二半导体层的发射结构上形成包括反射金属层和导电阻挡层的反射图案。 导电阻挡层防止反射金属层的扩散，并延伸到在形成过程期间凹陷在具有突出结构的光致抗蚀剂图案下的保护绝缘层。 因此，防止导电阻挡层与具有过悬挂结构和反射金属层形成点的光致抗蚀剂图案的侧壁接触的现象。 因此，可以制造具有各种形状的LED模块。

公开(公告)号：US11862455B2

公开(公告)日：2024-01-02

申请号：US18153205

申请日：2023-01-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu Kim ,  Min Woo Kang ,  Se Hee Oh ,  Hyoung Jin Lim

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/32

CPC classification number: H01L33/382 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44 ,  H01L33/32

Abstract: A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.