公开(公告)号：US09722121B2

公开(公告)日：2017-08-01

申请号：US14890603

申请日：2014-05-13

Applicant: SEGTON ADVANCED TECHNOLOGY SAS

Inventor： Zbigniew Kuznicki ,  Patrick Meyrueis

IPC: H01L21/00 ,  H01L31/065 ,  H01L31/036 ,  H01L31/0288 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0368 ,  H01L31/0376

CPC classification number: H01L31/065 ,  H01L31/0288 ,  H01L31/0352 ,  H01L31/035236 ,  H01L31/036 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

Abstract: The invention bears on elementary nanoscale units nanostructured-formed inside a silicon material and the manufacturing process to implement them. Each elementary nanoscale unit is created by means of a limited displacement of two Si atoms outside a crystal elementary unit. A localized nanoscale transformation of the crystalline matter gets an unusual functionality by focusing in it a specific physical effect as is a highly useful additional set of electron energy levels that is optimized for the solar spectrum conversion to electricity. An adjusted energy set allows a low-energy secondary electron generation in a semiconductor, preferentially silicon, material for use especially in very-high efficiency all-silicon light-to-electricity converters. The manufacturing process to create such transformations in a semiconductor material bases on a local energy deposition like ion implantation or electron (γ,X) beam irradiation and suitable thermal treatment and is industrially easily available.

公开(公告)号：US11437532B2

公开(公告)日：2022-09-06

申请号：US16618421

申请日：2018-06-04

Applicant: SEGTON ADVANCED TECHNOLOGY

Inventor： Zbigniew Kuznicki

IPC: H01L31/0352 ,  H01L31/0216 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/18

Abstract: The production process according to the invention consists of a nanometric scale transformation of the crystalline silicon in a hybrid arrangement buried within the crystal lattice of a silicon wafer, to improve the efficiency of the conversion of light into electricity, by means of hot electrons. All the parameters, procedures and steps involved in manufacturing giant photoconversion cells have been tested and validated separately, by producing twenty series of test devices.
An example of the technology consists of manufacturing a conventional crystalline silicon photovoltaic cell with a single collection junction and completing the device thus obtained by an amorphizing ion implantation followed by a post-implantation thermal treatment.
The modulation of the crystal, specific to the giant photoconversion, is then carried out on a nanometric scale in a controlled manner to obtain SEGTONs and SEG-MATTER which are active both optically and electronically, together with the primary conversion of the host converter.

公开(公告)号：US11329180B2

公开(公告)日：2022-05-10

申请号：US14912649

申请日：2014-09-03

Applicant: SEGTON ADVANCED TECHNOLOGY

Inventor： Zbigniew Kuznicki ,  Patrick Meyrueis

IPC: H01L31/042 ,  H02N6/00 ,  H01L31/055 ,  H01L31/054 ,  H01L31/0216 ,  H01L31/0747 ,  H01L31/20

Abstract: The invention relates to a high yield multistage light-to-electricity multiplying platform unit which is provided on its front face with a protection antireflection coating or layer (1) and with an upper electrode layer (5) characterized in that it comprises: an opto-phonic platform composed of a UV radiation light-to-light down converter (2) to a particular sub-band in the visible radiation domain, a harvesting diffractive grading component (3) including an electronic passivation layer (4) and with light splitting means and one or more sub-band light into narrowed sub-band light concentration converter(s), a IR radiation up conversion dedicated light converter, a converting multiplying platform made of several optimal for each narrowed and concentrated sub-band light-to-electricity multiplying converters. A digital optical light management layer on the top, collects, filters, splits and concentrates sunlight into sub-bands and to project them onto dedicated light-to-electricity preferentially all-silicon converters with low-energy multiplication capacity. The UV wavelengths are absorbed and down-converted within the top nanolayer of the platform. The other spectral components of the solar light are transmitted by this top nanolayer, guided to the dedicated panel area and focused on adjusted converters.

公开(公告)号：US20200259027A1

公开(公告)日：2020-08-13

申请号：US16618421

申请日：2018-06-04

Applicant: SEGTON ADVANCED TECHNOLOGY

Inventor： Zbigniew Kuznicki

IPC: H01L31/0352 ,  H01L31/0216 ,  H01L31/0747 ,  H01L31/20

Abstract: The production process according to the invention consists of a nanometric scale transformation of the crystalline silicon in a hybrid arrangement buried within the crystal lattice of a silicon wafer, to improve the efficiency of the conversion of light into electricity, by means of hot electrons. All the parameters, procedures and steps involved in manufacturing giant photoconversion cells have been tested and validated separately, by producing twenty series of test devices.An example of the technology consists of manufacturing a conventional crystalline silicon photovoltaic cell with a single collection junction and completing the device thus obtained by an amorphizing ion implantation followed by a post-implantation thermal treatment.The modulation of the crystal, specific to the giant photoconversion, is then carried out on a nanometric scale in a controlled manner to obtain SEGTONs and SEG-MATTER which are active both optically and electronically, together with the primary conversion of the host converter.

公开(公告)号：US10971642B2

公开(公告)日：2021-04-06

申请号：US14912619

申请日：2014-08-20

Applicant: SEGTON ADVANCED TECHNOLOGY

Inventor： Zbigniew Kuznicki ,  Patrick Meyrueis

IPC: H01L31/055 ,  H01L31/054

Abstract: The solar photovoltaic photoconverter unit (1) comprises a light processing opto-photonic platform (2) realized by at least one transparent substrate (8) is having on, at least one, of its faces a digital diffractive grating constituted by slanted ribs (11) that are modulated to harvest a maximum of solar light at any angle of incidence to split it into several spectral sub-bands, to guide and to concentrate individually every one of these spectral sub-band, toward a separate output of the opto-photonic platform (2) for allowing its exploitation by a light-to-electricity conversion unit (3) that will have by optimization a grate overall conversion efficiency. The opto-photonic platform (2) also includes photonic converters (13) and (14) converting ultraviolet light into visible light and also infrared light in visible light for a better exploitation of the energy present in the solar light and so increasing the light to electricity conversion. The solar photovoltaic photoconverter unit (1) comprises also a light-to-electricity converter unit (3).

公开(公告)号：US10886422B2

公开(公告)日：2021-01-05

申请号：US14890606

申请日：2014-05-13

Applicant: SEGTON ADVANCED TECHNOLOGY

Inventor： Zbigniew Kuznicki ,  Patrick Meyrueis

IPC: H01L31/0352 ,  H01L31/068 ,  H01L31/18 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0288 ,  G02B1/00 ,  H01L31/0216 ,  H01L31/0376

Abstract: This invention concerns a grouped nanostructured unit system forming a metamaterial within the silicon and the manufacturing process to arrange them therein in an optimal manner. The nanostructured units are grouped and conditioned in an optimal arrangement inside the silicon material. The process comprises the modification of the elementary crystal unit together with the stress field, the electric field and a heavy impurity doping in order to form a superlattice of nanostructured units grouped in an optimal arrangement so as to improve the efficiency of the light-to-electricity conversion by means of efficient use of the kinetic energy of hot electrons and efficient collection of all electrons generated within the converter.