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公开(公告)号：US09136022B2
公开(公告)日：2015-09-15
申请号：US14285052
申请日：2014-05-22
Applicant: SanDisk Technologies Inc.
Inventor： Deepak Raghu , Gautam A. Dusija , Chris Avila , Yingda Dong , Man Mui , Xiying Costa , Pao-Ling Koh
CPC classification number: G11C29/82 , G06F11/108 , G11C16/0483 , G11C16/10 , G11C29/08 , G11C29/822 , G11C29/838 , G11C2029/0411
Abstract: Layers in a multi-layer memory array are categorized according to likely error rates as predicted from their memory hole diameters. Data to be stored along a word line in a high risk layer is subject to a redundancy operation (e.g. XOR) with data to be stored along a word line in a low risk layer so that the risk of both being bad is low.
Abstract translation: 多层存储器阵列中的层根据从其存储孔直径预测的可能的错误率进行分类。 沿着高风险层中的字线存储的数据经受冗余操作（例如XOR），其中数据将沿着低风险层中的字线存储，使得两者的风险都较低。
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公开(公告)号：US20150121156A1
公开(公告)日：2015-04-30
申请号：US14064823
申请日：2013-10-28
Applicant: SanDisk Technologies Inc.
Inventor： Deepak Raghu , Gautam A. Dusija , Chris Avila , Yingda Dong , Man Mui , Alexander Kwok-Tung Mak , Pao-Ling Koh
IPC: G11C29/08
CPC classification number: G11C29/08 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/26 , G11C29/00 , G11C29/021 , G11C29/028 , H01L27/115 , H01L27/1157 , H01L27/11582
Abstract: Memory hole diameter in a three dimensional memory array may be calculated from characteristics that are observed during programming. Suitable operating parameters may be selected for operating a block based on memory hole diameters. Hot counts of blocks may be adjusted according to memory hole size so that blocks that are expected to fail earlier because of small memory holes are more lightly used than blocks with larger memory holes.
Abstract translation: 三维存储器阵列中的存储孔直径可以根据在编程期间观察到的特性来计算。 可以选择合适的操作参数来基于存储器孔直径操作块。 可以根据存储器孔尺寸来调整块的热计数，使得由于小的存储器孔而预期更早失效的块比具有较大存储器孔的块更轻易地使用。
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公开(公告)号：US20150117099A1
公开(公告)日：2015-04-30
申请号：US14285052
申请日：2014-05-22
Applicant: SanDisk Technologies Inc.
Inventor： Deepak Raghu , Gautam A. Dusija , Chris Avila , Yingda Dong , Man Mui , Xiying Costa , Pao-Ling Koh
CPC classification number: G11C29/82 , G06F11/108 , G11C16/0483 , G11C16/10 , G11C29/08 , G11C29/822 , G11C29/838 , G11C2029/0411
Abstract: Layers in a multi-layer memory array are categorized according to likely error rates as predicted from their memory hole diameters. Data to be stored along a word line in a high risk layer is subject to a redundancy operation (e.g. XOR) with data to be stored along a word line in a low risk layer so that the risk of both being bad is low.
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公开(公告)号：US08913431B1
公开(公告)日：2014-12-16
申请号：US14274440
申请日：2014-05-09
Applicant: SanDisk Technologies Inc.
Inventor： Xiying Costa , Alexander Kwok-Tung Mak , Chris Avila , Gautam Dusija , Man Mui
CPC classification number: G11C16/107 , G11C16/0408 , G11C16/0483 , G11C16/10 , G11C16/14 , G11C16/16
Abstract: A 3D NAND stacked non-volatile memory device, comprising: a string comprising a plurality of non-volatile storage elements, the string comprises a channel and extends vertically through layers of the 3D stacked non-volatile memory device, and the plurality of storage elements are subdivided into different groups based on group assignments, each group of the different groups comprises multiple adjacent storage elements of the plurality of storage elements; and a control circuit in communication with the string, the control circuit, to perform a Pseudo Block Operation Mode.
Abstract translation: 一种3D NAND堆叠非易失性存储器件，包括：包括多个非易失性存储元件的串，所述串包括通道并垂直延伸穿过所述3D堆叠非易失性存储器件的层，并且所述多个存储元件 基于组分配被细分为不同的组，每组不同组包括多个存储元件中的多个相邻存储元件; 以及控制电路，与控制电路串联连接，以执行伪块操作模式。
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5.发明申请Selection of Data for Redundancy Calculation in Three Dimensional Nonvolatile Memory 有权在三维非易失性存储器中选择冗余计算的数据公开(公告)号：US20140359400A1
公开(公告)日：2014-12-04
申请号：US14281243
申请日：2014-05-19
Applicant: SanDisk Technologies Inc.
Inventor： Chris Avila , Gautam Dusija , Jian Chen , Yingda Dong , Man Mui , Seungpil Lee , Alex Mak
CPC classification number: G06F11/1068 , G06F12/0246 , G11C16/0483 , G11C16/349 , G11C29/04 , G11C29/82 , G11C2213/71
Abstract: Portions of data stored in a three dimensional memory array are selected based on their locations for calculation of redundancy data. Locations are selected so that no two portions in a set of portions for a given calculation are likely to become uncorrectable at the same time. Selected portions may be separated by at least one word line and separated by at least one string in a block.
Abstract translation: 基于它们用于计算冗余数据的位置来选择存储在三维存储器阵列中的部分数据。 选择位置，使得给定计算的一组部分中的两个部分可能在同一时间变得不可校正。 所选择的部分可以被至少一个字线分隔开并且被块中的至少一个字符串隔开。
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Patent Agency Ranking
公开(公告)号：US20140351496A1
公开(公告)日：2014-11-27
申请号：US14452749
申请日：2014-08-06
Applicant: SanDisk Technologies Inc.
Inventor： Chris Avila , Yingda Dong , Man Mui
IPC: G06F12/02
CPC classification number: G06F12/0246 , G06F2212/7205 , G11C5/06 , G11C7/24 , G11C8/10 , G11C11/412 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/06 , G11C29/021 , G11C29/028 , G11C29/50004 , H01L45/122
Abstract: Configurable parameters may be used to access NAND flash memory according to schemes that optimize such parameters according to predicted characteristics of memory cells, for example, as a function of certain memory cell device geometry, which may be predicted based on the location of a particular device within a memory array.
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7.发明授权Multi tier three-dimensional memory devices including vertically shared bit lines 有权包括垂直共享位线的多层三维存储器件公开(公告)号：US09502471B1
公开(公告)日：2016-11-22
申请号：US14834943
申请日：2015-08-25
Applicant: SANDISK TECHNOLOGIES INC.
Inventor： Zhenyu Lu , Henry Chien , Johann Alsmeier , Koji Miyata , Tong Zhang , Man Mui , James Kai , Wenguang Shi , Wei Zhao , Xiaolong Hu , Jiyin Xu , Gerrit Jan Hemink , Christopher Petti
IPC: H01L47/00 , H01L27/24 , H01L27/115 , H01L23/528 , H01L23/522 , H01L29/788 , H01L45/00 , H01L29/66 , H01L21/768
CPC classification number: H01L23/528 , H01L21/768 , H01L21/76816 , H01L21/76877 , H01L23/5226 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11573 , H01L27/11575 , H01L27/11582 , H01L27/2454 , H01L27/2481 , H01L27/249 , H01L29/66666 , H01L29/7883 , H01L45/04 , H01L45/1226 , H01L45/146
Abstract: A multi-tier memory device is formed over a substrate such that memory stack structures extend through an alternating stack of insulating layers and electrically conductive layers within each tier. Bit lines are formed between an underlying tier having drain regions over semiconductor channels and an overlying tier having drain regions under semiconductor channel, such that the bit lines are shared between the underlying tier and the overlying tier. Source lines can be formed over each tier in which source regions overlie semiconductor channels and drain regions. If another tier is present above the source lines, the source lines can be shared between two vertically neighboring tiers.
Abstract translation: 多层存储器件形成在衬底上，使得存储器堆叠结构延伸穿过绝缘层的交替堆叠和每层内的导电层。 位线形成在具有半导体通道上的漏极区域的底层和在半导体通道下方具有漏极区域的上层，使得位线在下层和上覆层之间共享。 可以在每个层上形成源极线，其中源极区域覆盖半导体沟道和漏极区域。 如果源线上方存在另一层，则可以在两个垂直相邻层之间共享源线。
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8.发明申请Programming Techniques for Non-Volatile Memories with Charge Trapping Layers 有权具有电荷陷阱层的非易失性存储器的编程技术公开(公告)号：US20160260476A1
公开(公告)日：2016-09-08
申请号：US14635918
申请日：2015-03-02
Applicant: SanDisk Technologies, Inc.
Inventor： Kenneth Louie , Man Mui
CPC classification number: G11C11/5628 , G11C7/14 , G11C11/5671 , G11C16/0466 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/32 , G11C16/3418 , G11C16/3427 , G11C16/3459
Abstract: Techniques are presented for the programming of a non-volatile memory in which multi-state memory cells use a charge trapping layer. When writing data onto a word lines, different data states are written individually, while programming inhibiting the other states, thereby breaking down the write operation into a number of sub-operations, one for each state to be written. This allows for improved timing and decreased power consumption.
Abstract translation: 呈现了用于编程非易失性存储器的技术，其中多状态存储器单元使用电荷捕获层。 当将数据写入字线时，分别写入不同的数据状态，同时编程禁止其他状态，从而将写入操作分解成多个子操作，每个要写入的状态一个。 这样可以改善定时和降低功耗。
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公开(公告)号：US09305648B2
公开(公告)日：2016-04-05
申请号：US14464122
申请日：2014-08-20
Applicant: SanDisk Technologies Inc.
Inventor： Hao Nguyen , Man Mui , Khanh Nguyen , Seungpil Lee , Toru Ishigaki , Yingda Dong
CPC classification number: G11C16/0483 , G11C11/5628 , G11C13/0069 , G11C16/08 , G11C16/10 , G11C16/20 , G11C16/24 , G11C16/26 , G11C16/3427 , G11C16/3459 , G11C2213/75 , H01L27/11556 , H01L27/11582
Abstract: In a non-volatile memory formed according to a NAND-type architecture that has, on one or both ends of the NAND strings, multiple select gates including some with programmable threshold voltages, a structure and corresponding for efficiently programming of such select gates. On the drain side, the end most of multiple drain select transistors is individually controllable and used for biasing purposes while one or more other drain side select gates are collectively programmed to set adjust their threshold voltage. Independently, on the source side, the end most of multiple source select transistors is individually controllable and used for biasing purposes while other source side select gates are collectively programmed to set adjust their threshold voltage.
Abstract translation: 在根据NAND型架构形成的非易失性存储器中，在NAND串的一端或两端具有包括一些具有可编程阈值电压的多个选择栅极，该结构并且对应于这种选择栅极的有效编程。 在漏极侧，多个漏极选择晶体管的大部分可单独控制并用于偏置目的，而一个或多个其它漏极侧选择栅极被共同编程以设置其阈值电压。 独立地，在源极侧，多个源极选择晶体管的大部分结束是单独可控的并且用于偏置目的，而其他源极侧选择栅极被集体编程以设置调整其阈值电压。
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公开(公告)号：US20160055918A1
公开(公告)日：2016-02-25
申请号：US14466786
申请日：2014-08-22
Applicant: SanDisk Technologies Inc.
Inventor： Mrinal Kochar , Gautam Dusija , Chris Avila , Yingda Dong , Man Mui , Yichao Huang , Deepak Raghu
CPC classification number: G11C16/3445 , G11C16/0483 , G11C16/16 , G11C2216/18 , H01L27/11556 , H01L27/11582
Abstract: In a three-dimensional nonvolatile memory, when a block erase failure occurs, zones within a block may be separately verified to see if some zones pass verification. Zones that pass may be designated as good zones and may subsequently be used to store user data while bad zones in the same block may be designated as bad and may not be used for subsequent storage of user data.
Abstract translation: 在三维非易失性存储器中，当发生块擦除故障时，块内的区域可以单独验证，以查看某些区域是否通过验证。 通过的区域可以被指定为良好区域，并且可以随后用于存储用户数据，同一块中的不良区域可能被指定为不良，并且可能不用于用户数据的后续存储。
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