公开(公告)号：US20220384643A1

公开(公告)日：2022-12-01

申请号：US17818402

申请日：2022-08-09

Applicant: Raytheon Systems Limited

Inventor： David Trann Clark ,  Robin Forster Thompson

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/66

Abstract: The method of manufacturing an integrated circuit includes obtaining a silicon carbide substrate of a first conductivity type having an epitaxial layer of a second conductivity type thereon. A dopant is implanted in the epitaxial layer to form a first region of the first conductivity type that extends the full depth of the epitaxial layer. A first transistor is formed in the first region and a second transistor is formed in the epitaxial layer.

公开(公告)号：US20180301548A1

公开(公告)日：2018-10-18

申请号：US15952877

申请日：2018-04-13

Applicant: Raytheon Systems Limited

Inventor： David Trann Clark ,  Ewan Philip Ramsay

IPC: H01L29/735 ,  H01L29/16 ,  H01L29/10 ,  H01L29/66 ,  H01L21/265

Abstract: The lateral bipolar junction transistor has a silicon carbide layer, the silicon carbide layer comprises a base region with a first conductivity type, a collector region with a second conductivity type and an emitter region with a second conductivity type. The collector region and the emitter region are within the base region, and the base region, collector region and emitter region are all arranged along an upper surface of the silicon carbide layer.

公开(公告)号：US11626325B2

公开(公告)日：2023-04-11

申请号：US17818402

申请日：2022-08-09

Applicant: Raytheon Systems Limited

Inventor： David Trann Clark ,  Robin Forster Thompson

IPC: H01L21/82 ,  H01L27/06 ,  H01L29/735 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L21/04 ,  H01L29/16 ,  H01L27/092 ,  H01L27/082

Abstract: The method of manufacturing an integrated circuit includes obtaining a silicon carbide substrate of a first conductivity type having an epitaxial layer of a second conductivity type thereon. A dopant is implanted in the epitaxial layer to form a first region of the first conductivity type that extends the full depth of the epitaxial layer. A first transistor is formed in the first region and a second transistor is formed in the epitaxial layer.

公开(公告)号：US10665703B2

公开(公告)日：2020-05-26

申请号：US15952877

申请日：2018-04-13

Applicant: Raytheon Systems Limited

Inventor： David Trann Clark ,  Ewan Philip Ramsay

IPC: H01L29/735 ,  H01L29/16 ,  H01L21/265 ,  H01L29/66 ,  H01L29/10 ,  H01L21/04

Abstract: The lateral bipolar junction transistor has a silicon carbide layer, the silicon carbide layer comprises a base region with a first conductivity type, a collector region with a second conductivity type and an emitter region with a second conductivity type. The collector region and the emitter region are within the base region, and the base region, collector region and emitter region are all arranged along an upper surface of the silicon carbide layer.

公开(公告)号：US11450568B2

公开(公告)日：2022-09-20

申请号：US15952665

申请日：2018-04-13

Applicant: Raytheon Systems Limited

Inventor： David Trann Clark ,  Robin Forster Thompson

IPC: H01L21/82 ,  H01L27/06 ,  H01L29/735 ,  H01L29/10 ,  H01L29/66 ,  H01L21/04 ,  H01L29/78 ,  H01L29/16 ,  H01L27/092 ,  H01L27/082

Abstract: The method of manufacturing an integrated circuit includes obtaining a silicon carbide substrate of a first conductivity type having an epitaxial layer of a second conductivity type thereon. A dopant is implanted in the epitaxial layer to form a first region of the first conductivity type that extends the full depth of the epitaxial layer. A first transistor is formed in the first region and a second transistor is formed in the epitaxial layer.

公开(公告)号：US20180301379A1

公开(公告)日：2018-10-18

申请号：US15952665

申请日：2018-04-13

Applicant: Raytheon Systems Limited

Inventor： David Trann Clark ,  Robin Forster Thompson

IPC: H01L21/82 ,  H01L27/06

Abstract: The method of manufacturing an integrated circuit includes obtaining a silicon carbide substrate of a first conductivity type having an epitaxial layer of a second conductivity type thereon. A dopant is implanted in the epitaxial layer to form a first region of the first conductivity type that extends the full depth of the epitaxial layer. A first transistor is formed in the first region and a second transistor is formed in the epitaxial layer.