Abstract:
A toroid inductor includes a plurality of first turns configured in a first ring shape and a plurality of second turns configured in a second ring shape. The plurality of first turns includes a plurality of first upper interconnects, a plurality of first lower interconnects, and a plurality of first vias coupled to the plurality of first upper interconnects and to the plurality of first lower interconnects. The plurality of second turns is at least partially intertwined with the plurality of first turns. The plurality of second turns includes a plurality of second upper interconnects, a plurality of second lower interconnects, and a plurality of second vias coupled to the plurality of second upper interconnects and to the plurality of second lower interconnects.
Abstract:
A package on package semiconductor structure includes a first package positioned above a first surface of a substrate, a second package positioned above the first package, and a first thermal element positioned between the first package and the second package, wherein the first thermal element is separated from the second package by an air gap and the thermal element provides a heat path for heat generated by the first package.
Abstract:
Some features pertain to an integrated device (e.g., package-on-package (PoP) device) that includes a substrate, a first die, a first encapsulation layer, a first redistribution portion, a second die, a second encapsulation layer, and a second redistribution portion. The substrate includes a first surface and a second surface. The substrate includes a capacitor. The first die is coupled to the first surface of the substrate. The first encapsulation layer encapsulates the first die. The first redistribution portion is coupled to the first encapsulation. The second die is coupled to the second surface of the substrate. The second encapsulation layer encapsulates the second die. The second redistribution portion is coupled to the second encapsulation layer.
Abstract:
Some features pertain to an integrated device that includes a first package, a set of interconnects, and a second package. The first package includes a first substrate comprising a first surface and a second surface. The first package includes a redistribution portion comprising a redistribution layer. The first package includes a first die coupled to the first surface of the first substrate. The set of interconnects is coupled to the redistribution portion of the first package. The second package is coupled to the first package through the set of interconnects. The second package includes a second substrate comprising a first surface and a second surface; and a second die coupled to the first surface of the second substrate, where the second die is electrically coupled to the first die through the second substrate of the second package, the set of interconnects, and the redistribution portion of the first package.
Abstract:
Some novel features pertain to a semiconductor device that includes a substrate, a first cavity that traverses the substrate. The first cavity is configured to be occupied by a interconnect material (e.g., solder ball). The substrate also includes a first metal layer coupled to a first side wall of the first cavity. The substrate further includes a first integrated passive device (IPD) on a first surface of the substrate, the first IPD coupled to the first metal layer. In some implementations, the substrate is a glass substrate. In some implementations, the first IPD is one of at least a capacitor, an inductor and/or a resistor. In some implementations, the semiconductor device further includes a second integrated passive device (IPD) on a second surface of the substrate. The second IPD is coupled to the first metal layer.
Abstract:
Some novel features pertain to a package substrate that includes a core layer, a first via, a first dielectric layer, and a first inductor. The core layer includes a first surface and a second surface. The first via is located in the core layer. The first dielectric layer is coupled to the first surface of the core layer. The first inductor is located in the first dielectric layer. The first inductor is coupled to the first via in the core layer. The first inductor is configured to generate a magnetic field that laterally traverses the package substrate. In some implementations, the package substrate further includes a first pad coupled to the first inductor, wherein the first pad is configured to couple to a solder ball. In some implementations, the package substrate includes a second via located in the core layer, and a second inductor located in the first dielectric layer.
Abstract:
Some features pertain to an integrated device that includes a substrate, several metal layers coupled to the substrate, several dielectric layers coupled to the substrate, and a redistribution portion coupled to one of the metal layers. The redistribution portion includes a first metal redistribution layer, an insulation layer coupled to the first metal redistribution layer, and a second metal redistribution layer coupled to the insulation layer. The first metal redistribution layer, the insulation layer, and the second metal redistribution layer are configured to operate as a capacitor in the integrated device. In some implementations, the capacitor is a metal-insulator-metal (MIM) capacitor.
Abstract:
Some novel features pertain to package substrates that include a substrate having an embedded package substrate (EPS) capacitor with equivalent series resistance (ESR) control. The EPS capacitor includes two conductive electrodes separated by a dielectric or insulative thin film material and an equivalent series resistance (ESR) control structure located on top of each electrode connecting the electrodes to vias. The ESR control structure may include a metal layer, a dielectric layer, and a set of metal pillars which are embedded in the set of metal pillars are embedded in the dielectric layer and extend between the electrode and the metal layer. The EPS capacitor having the ESR control structure form an ESR configurable EPS capacitor which can be embedded in package substrates.
Abstract:
Some features pertain to an integrated device that includes a first package, a set of interconnects, and a second package. The first package includes a first substrate comprising a first surface and a second surface. The first package includes a redistribution portion comprising a redistribution layer. The first package includes a first die coupled to the first surface of the first substrate. The set of interconnects is coupled to the redistribution portion of the first package. The second package is coupled to the first package through the set of interconnects. The second package includes a second substrate comprising a first surface and a second surface; and a second die coupled to the first surface of the second substrate, where the second die is electrically coupled to the first die through the second substrate of the second package, the set of interconnects, and the redistribution portion of the first package.
Abstract:
Some novel features pertain to an integrated device that includes a substrate, a first cavity through the substrate, and a toroid inductor configured around the first cavity of the substrate. The toroid inductor includes a set of windings configured around the first cavity. The set of windings includes a first set of interconnects on a first surface of the substrate, a set of though substrate vias (TSVs), and a second set of interconnects on a second surface of the substrate. The first set of interconnects is coupled to the second set of interconnects through the set TSVs. In some implementations, the integrated device further includes an interconnect material (e.g., solder ball) located within the first cavity. The interconnect material is configured to couple a die to a printed circuit board. In some implementations, the interconnect material is part of the toroid inductor.