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1.发明申请CORE-SHELL NICKEL ALLOY COMPOSITE PARTICLE METALLIZATION LAYERS FOR SILICON SOLAR CELLS 有权硅壳镍合金复合颗粒金属层用于硅太阳能电池公开(公告)号：US20150083213A1
公开(公告)日：2015-03-26
申请号：US14493346
申请日：2014-09-23
Applicant: PLANT PV, Inc.
Inventor： Brian E. Hardin , Stephen T. Connor , James Randy Groves , Craig H. Peters
IPC: H01L31/0224 , H01L31/028 , H01L31/02
CPC classification number: H01L31/022425 , H01B1/02 , H01B1/16 , H01B1/20 , H01L31/0512 , Y02E10/50
Abstract: Materials and Methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles.
Abstract translation: 公开了用于制造后贴片，前母线和用于硅基光伏电池的细格线层的材料和方法。 材料包括含有核 - 壳镍基颗粒的导电金属化浆料。
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公开(公告)号：US20160049541A1
公开(公告)日：2016-02-18
申请号：US14731352
申请日：2015-06-04
Applicant: PLANT PV, Inc.
Inventor： Brian E. Hardin , Stephen T. Connor , James Randy Groves , Craig H. Peters
IPC: H01L31/078 , H01L31/028 , H01L31/0368 , H02S30/10 , H01L31/0296
CPC classification number: H01L31/078 , H01L31/02363 , H01L31/028 , H01L31/0296 , H01L31/0368 , H01L31/0445 , H01L31/048 , H01L31/0488 , H01L31/054 , H01L31/0687 , H01L31/1836 , H02S30/10 , Y02E10/52 , Y02E10/544 , Y02P70/521
Abstract: Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.
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公开(公告)号：US20150243812A1
公开(公告)日：2015-08-27
申请号：US14706971
申请日：2015-05-08
Applicant: PLANT PV, Inc.
Inventor： Brian E. Hardin , Stephen T. Connor , James Randy Groves , Craig H. Peters , Jose Marcial Portilla
IPC: H01L31/0224 , C09D5/24
CPC classification number: C09D5/24 , H01B1/22 , H01L31/022425 , H01L31/068 , Y02E10/547
Abstract: Metallization pastes for use with semiconductor devices are disclosed. The pastes contain silver nanoparticles, silver microparticles, and nondeformable inorganic material particles. Specific formulations have been developed that yield printed lines with low porosities and high peel strengths.
Abstract translation: 公开了用于半导体器件的金属化糊料。 糊状物含有银纳米颗粒，银微粒和不可变形的无机材料颗粒。 已经开发了具有低孔隙率和高剥离强度的印刷线的具体配方。
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Patent Agency Ranking
4.发明申请P-TYPE DOPING OF II-VI MATERIALS WITH RAPID VAPOR DEPOSITION USING RADICAL NITROGEN 审中-公开使用放射性氮气的具有快速蒸发沉积的II-VI材料的P型掺杂公开(公告)号：US20150053259A1
公开(公告)日：2015-02-26
申请号：US14466118
申请日：2014-08-22
Applicant: Plant PV
Inventor： Brian E. Hardin , James Randy Groves , Stephen T. Connor , Craig H. Peters
IPC: H01L31/18 , H01L31/0296 , H01L31/042 , H01L29/227 , H01L21/02
CPC classification number: H01L21/02579 , C23C14/0623 , C23C14/22 , H01L21/0242 , H01L21/02422 , H01L21/02491 , H01L21/02551 , H01L21/02562 , H01L21/02631 , H01L29/22 , H01L31/0296 , H01L31/032 , H01L31/0336 , H01L31/073 , H01L31/074 , H01L31/20 , Y02E10/543 , Y02P70/521
Abstract: Apparatus and methods to incorporate p-type dopants in II-VI semiconducting layers are disclosed herein. In some embodiments, radical nitrogen is introduced in a physical vapor deposition apparatus operating at moderate pressures (e.g. 10−5 Torr to 100 Torr). The radical nitrogen allows for in-situ doping of II-VI materials, such as ZnTe, to degenerate levels.
Abstract translation: 本文公开了在II-VI半导体层中掺入p型掺杂剂的装置和方法。 在一些实施方案中，将自由基氮引入在中等压力（例如10 -5 Torr至100 Torr）下操作的物理气相沉积设备中。 自由基氮允许II-VI材料如ZnTe的原位掺杂降解水平。
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5.发明申请CORE-SHELL NICKEL ALLOY COMPOSITE PARTICLE METALLIZATION LAYERS FOR SILICON SOLAR CELLS 有权硅壳镍合金复合颗粒金属层用于硅太阳能电池公开(公告)号：US20140374669A1
公开(公告)日：2014-12-25
申请号：US14311239
申请日：2014-06-20
Applicant: Plant PV
Inventor： Brian E. Hardin , Stephen T. Connor , James Randy Groves , Craig H. Peters
IPC: H01L31/0224
CPC classification number: H01L31/022425 , H01B1/22 , H01L31/068 , Y02E10/547
Abstract: Materials and methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles.
Abstract translation: 公开了用于制造用于硅基光伏电池的后贴片，前母线和细网格线层的材料和方法。 材料包括含有核 - 壳镍基颗粒的导电金属化浆料。
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公开(公告)号：US09698283B2
公开(公告)日：2017-07-04
申请号：US14311239
申请日：2014-06-20
Applicant: Plant PV
Inventor： Brian E. Hardin , Stephen T. Connor , James Randy Groves , Craig H. Peters
IPC: H01L31/00 , H01B1/22 , H01L31/0224 , H01L31/068
CPC classification number: H01L31/022425 , H01B1/22 , H01L31/068 , Y02E10/547
Abstract: Materials and methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles.
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7.发明申请SILVER-BISMUTH NON-CONTACT METALLIZATION PASTES FOR SILICON SOLAR CELLS 有权SILIS-BISMUTH非接触式金属化硅胶太阳能电池公开(公告)号：US20170062632A1
公开(公告)日：2017-03-02
申请号：US15243830
申请日：2016-08-22
Applicant: PLANT PV, Inc.
Inventor： Brian E. Hardin , Stephen T. Connor , James Randy Groves , Craig H. Peters
IPC: H01L31/0224 , H01L31/02
Abstract: Metallization pastes for use with semiconductor devices are disclosed. The pastes contain silver particles, low-melting-point base-metal particles, organic vehicle, and optional crystallizing agents. Specific formulations have been developed that produce stratified metal films that contain less silver than conventional pastes and that have high peel strengths. Such pastes can be used to make high contact resistance metallization layers on silicon.
Abstract translation: 公开了用于半导体器件的金属化糊料。 糊料含有银颗粒，低熔点贱金属颗粒，有机载体和任选的结晶剂。 已经开发了具有比常规糊料含有更少银并且具有高剥离强度的分层金属膜的具体配方。 这样的糊料可用于在硅上制备高接触电阻的金属化层。
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8.发明授权Core-shell nickel alloy composite particle metallization layers for silicon solar cells 有权硅壳太阳能电池芯壳镍合金复合颗粒金属化层公开(公告)号：US09331216B2
公开(公告)日：2016-05-03
申请号：US14493346
申请日：2014-09-23
Applicant: PLANT PV, Inc.
Inventor： Brian E. Hardin , Stephen T. Connor , James Randy Groves , Craig H. Peters
IPC: H01L31/0224 , H01B1/20 , H01L31/05
CPC classification number: H01L31/022425 , H01B1/02 , H01B1/16 , H01B1/20 , H01L31/0512 , Y02E10/50
Abstract: Materials and methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles.
Abstract translation: 公开了用于制造用于硅基光伏电池的后贴片，前母线和细网格线层的材料和方法。 材料包括含有核 - 壳镍基颗粒的导电金属化浆料。
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