公开(公告)号：US07791918B2

公开(公告)日：2010-09-07

申请号：US11862802

申请日：2007-09-27

Applicant: Paul Ruby

Inventor： Paul Ruby

IPC: G11C5/02

CPC classification number: G11C7/20 ,  G11C5/02 ,  G11C2029/4402

Abstract: A method for use with devices in a stacked package is discussed. By preprogramming a unique identifier into a device during manufacture, the device can determine its position in the stack and perform a task based on its position in the stack. In one embodiment, the task is power-up.

Abstract translation: 讨论了与堆叠封装中的器件一起使用的方法。 通过在制造期间将唯一标识符预编程到设备中，设备可以确定其在堆栈中的位置，并根据其在堆栈中的位置执行任务。 在一个实施例中，任务是加电。

公开(公告)号：US20080304327A1

公开(公告)日：2008-12-11

申请号：US11810550

申请日：2007-06-06

Applicant: Daniel Elmhurst ,  Violante Moschiano ,  Paul Ruby

Inventor： Daniel Elmhurst ,  Violante Moschiano ,  Paul Ruby

IPC: G11C11/401 ,  G11C16/16 ,  G11C29/04

CPC classification number: G11C16/3418 ,  G11C11/406 ,  G11C16/0483 ,  G11C2211/4062

Abstract: Methods and apparatuses for refreshing non-volatile memories due to changes in memory cell charges, such as charge loss, are disclosed. Embodiments generally comprise a voltage generator to create a sub-threshold voltage for a memory state of memory cells in a block. Once the sub-threshold voltage is applied to a word line a state reader determines states of memory cells coupled to the word line. If the state reader determines that one or more of the memory cells coupled to the word line is in the memory state, despite the sub-threshold voltage, a memory refresher may program a number of memory cells in the block. Method embodiments generally comprise applying a sub-threshold voltage to a word line for a plurality of memory cells, detecting at least one memory cell of the plurality violates a state parameter, and refreshing a block of memory cells associated with the plurality of cells.

Abstract translation: 公开了由于诸如电荷损失的存储器单元费用的变化而刷新非易失性存储器的方法和装置。 实施例通常包括电压发生器以产生用于块中的存储器单元的存储器状态的次阈值电压。 一旦子阈值电压被施加到字线，状态读取器就确定耦合到字线的存储器单元的状态。 如果状态读取器确定耦合到字线的一个或多个存储器单元处于存储器状态，尽管存在子阈值电压，存储器刷新器可以对块中的多个存储单元进行编程。 方法实施例通常包括将子阈值电压施加到多个存储器单元的字线，检测多个存储单元中的至少一个存储单元违反状态参数，以及刷新与多个单元相关联的存储单元块。

公开(公告)号：US07969788B2

公开(公告)日：2011-06-28

申请号：US11894377

申请日：2007-08-21

Applicant: Violante Moschiano ,  Daniel Elmhurst ,  Paul Ruby

Inventor： Violante Moschiano ,  Daniel Elmhurst ,  Paul Ruby

IPC: G11C11/34

CPC classification number: G11C16/34 ,  G11C16/10 ,  G11C16/349

Abstract: Methods and apparatus for compensating for charge loss in memories include tracking a specific block of the main memory array and determining charge loss compensation by comparing pre-cycled and post-cycled mean threshold voltages for the tracking block; or tracking each block of the main memory and determining charge loss and compensation on a block by block basis.

Abstract translation: 用于补偿存储器中的电荷损失的方法和装置包括跟踪主存储器阵列的特定块并通过比较跟踪块的预循环和后循环平均阈值电压来确定电荷损失补偿; 或跟踪主存储器的每个块，并逐个逐块地确定电荷损耗和补偿。

公开(公告)号：US5701266A

公开(公告)日：1997-12-23

申请号：US760928

申请日：1996-12-06

Applicant: Albert Fazio ,  Gregory E. Atwood ,  James O. Mi ,  Paul Ruby

Inventor： Albert Fazio ,  Gregory E. Atwood ,  James O. Mi ,  Paul Ruby

IPC: G11C11/56 ,  G11C27/00

CPC classification number: G11C11/5628 ,  G11C11/5621

Abstract: In a memory device including an array of memory cells, each memory cell having more than two possible states, a method for programming a memory cell to a desired state. The method comprises a control engine programming a subset of the array of memory cells. Characterization information is determined from the step of programming the subset, wherein the characterization information indicates programming characteristics of a representative memory cell of the array of memory cells. The control engine then uses the characterization information to directly program the memory cell to approximately the desired state without performing a program verify operation.

Abstract translation: 在包括存储器单元阵列的存储器件中，每个存储器单元具有两个以上的可能状态，一种用于将存储器单元编程到期望状态的方法。 该方法包括编程存储器单元阵列的子集的控制引擎。 从编程该子集的步骤确定表征信息，其中表征信息指示存储器单元阵列的代表性存​​储单元的编程特性。 控制引擎然后使用表征信息直接将存储器单元编程到大致期望的状态，而不执行程序验证操作。

公开(公告)号：US08595422B2

公开(公告)日：2013-11-26

申请号：US13546876

申请日：2012-07-11

Applicant: Paul Ruby ,  Neal Mielke

Inventor： Paul Ruby ,  Neal Mielke

IPC: G06F12/00

CPC classification number: G11C16/10 ,  G11C7/1006 ,  G11C11/5628 ,  G11C16/0483 ,  G11C29/00 ,  G11C2211/5647

Abstract: Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of memory cells; and a data randomizer configured to randomly or pseudo-randomly change original data to be stored in the memory block to changed data. The original data is changed such that a pattern of data as stored in the memory block is different than what it would have been if the original data had been stored in the memory block during a write operation. This configuration can reduce or eliminate data pattern-dependent errors in data digits stored in memory cells.

Abstract translation: 公开了装置和方法，例如涉及闪存装置的装置和方法。 一种这样的装置包括包括多个存储单元的存储块; 以及数据随机化器，被配置为随机地或伪随机地将要存储在存储器块中的原始数据改变为改变的数据。 原始数据被改变，使得存储在存储器块中的数据的模式与在写入操作期间原始数据已被存储在存储器块中的情况不同。 该配置可以减少或消除存储在存储单元中的数据数据中的数据模式相关错误。

公开(公告)号：US08230158B2

公开(公告)日：2012-07-24

申请号：US12190482

申请日：2008-08-12

Applicant: Paul Ruby ,  Neal Mielke

Inventor： Paul Ruby ,  Neal Mielke

IPC: G06F12/00

CPC classification number: G11C16/10 ,  G11C7/1006 ,  G11C11/5628 ,  G11C16/0483 ,  G11C29/00 ,  G11C2211/5647

Abstract: Apparatus and methods are disclosed, such as those involving a flash memory device. One such apparatus includes a memory block including a plurality of memory cells; and a data randomizer configured to randomly or pseudo-randomly change original data to be stored in the memory block to changed data. The original data is changed such that a pattern of data as stored in the memory block is different than what it would have been if the original data had been stored in the memory block during a write operation. This configuration can reduce or eliminate data pattern-dependent errors in data digits stored in memory cells.

Abstract translation: 公开了装置和方法，例如涉及闪存装置的装置和方法。 一种这样的装置包括包括多个存储单元的存储块; 以及数据随机化器，被配置为随机地或伪随机地将要存储在存储器块中的原始数据改变为改变的数据。 原始数据被改变，使得存储在存储器块中的数据的模式与在写入操作期间原始数据已被存储在存储器块中的情况不同。 该配置可以减少或消除存储在存储单元中的数据数据中的数据模式相关错误。

公开(公告)号：US07535787B2

公开(公告)日：2009-05-19

申请号：US11810550

申请日：2007-06-06

Applicant: Daniel Elmhurst ,  Violante Moschiano ,  Paul Ruby

Inventor： Daniel Elmhurst ,  Violante Moschiano ,  Paul Ruby

IPC: G11C7/00

CPC classification number: G11C16/3418 ,  G11C11/406 ,  G11C16/0483 ,  G11C2211/4062

Abstract: Methods and apparatuses for refreshing non-volatile memories due to changes in memory cell charges, such as charge loss, are disclosed. Embodiments generally comprise a voltage generator to create a sub-threshold voltage for a memory state of memory cells in a block. Once the sub-threshold voltage is applied to a word line a state reader determines states of memory cells coupled to the word line. If the state reader determines that one or more of the memory cells coupled to the word line is in the memory state, despite the sub-threshold voltage, a memory refresher may program a number of memory cells in the block. Method embodiments generally comprise applying a sub-threshold voltage to a word line for a plurality of memory cells, detecting at least one memory cell of the plurality violates a state parameter, and refreshing a block of memory cells associated with the plurality of cells.

Abstract translation: 公开了由于诸如电荷损失的存储器单元费用的变化而刷新非易失性存储器的方法和装置。 实施例通常包括电压发生器以产生用于块中的存储器单元的存储器状态的次阈值电压。 一旦子阈值电压被施加到字线，状态读取器就确定耦合到字线的存储器单元的状态。 如果状态读取器确定耦合到字线的一个或多个存储器单元处于存储器状态，尽管存在子阈值电压，存储器刷新器可以对块中的多个存储单元进行编程。 方法实施例通常包括将子阈值电压施加到多个存储器单元的字线，检测多个存储单元中的至少一个存储单元违反状态参数，以及刷新与多个单元相关联的存储单元块。

公开(公告)号：US07193901B2

公开(公告)日：2007-03-20

申请号：US11104824

申请日：2005-04-13

Applicant: Paul Ruby ,  Sean Eilert

Inventor： Paul Ruby ,  Sean Eilert

IPC: G11C11/34

CPC classification number: G11C16/3418 ,  G11C16/3427

Abstract: A canary cell may be used in a semiconductor memory to indicate an incipient failure. For example, the canary cell may be provided on rows in a flash memory. Before a read disturb occurs, the canary cell may first sense the condition, for example, because it may be biased with a higher drain bias and is, therefore, more susceptible to the read disturb problem.

Abstract translation: 半导体存储器中可以使用金丝雀单元来指示初始故障。 例如，可以在闪存中的行上提供金丝雀单元。 在读取干扰发生之前，金丝雀单元可以首先感测该状况，例如，因为它可能以较高的漏极偏置偏置，因此更容易受到读取干扰问题的影响。

公开(公告)号：US20140293697A1

公开(公告)日：2014-10-02

申请号：US14290315

申请日：2014-05-29

Applicant: Violante Moschiano ,  Daniel Elmhurst ,  Paul Ruby

Inventor： Violante Moschiano ,  Daniel Elmhurst ,  Paul Ruby

IPC: G11C16/34 ,  G11C16/10

CPC classification number: G11C16/34 ,  G11C16/10 ,  G11C16/349

Abstract: Methods and apparatus for compensating for charge loss in memories include tracking a specific block of the main memory array and determining charge loss compensation by comparing pre-cycled and post-cycled mean threshold voltages for the tracking block; or tracking each block of the main memory and determining charge loss and compensation on a block by block basis.

Abstract translation: 用于补偿存储器中的电荷损失的方法和装置包括跟踪主存储器阵列的特定块并通过比较跟踪块的预循环和后循环平均阈值电压来确定电荷损失补偿; 或跟踪主存储器的每个块，并逐个逐块地确定电荷损耗和补偿。

公开(公告)号：US20110199826A1

公开(公告)日：2011-08-18

申请号：US13093411

申请日：2011-04-25

Applicant: Violante Moschiano ,  Daniel Elmhurst ,  Paul Ruby

Inventor： Violante Moschiano ,  Daniel Elmhurst ,  Paul Ruby

IPC: G11C16/04 ,  G11C16/34

CPC classification number: G11C16/34 ,  G11C16/10 ,  G11C16/349

Abstract: Methods and apparatus for compensating for charge loss in memories include tracking a specific block of the main memory array and determining charge loss compensation by comparing pre-cycled and post-cycled mean threshold voltages for the tracking block; or tracking each block of the main memory and determining charge loss and compensation on a block by block basis.

Abstract translation: 用于补偿存储器中的电荷损失的方法和装置包括跟踪主存储器阵列的特定块并通过比较跟踪块的预循环和后循环平均阈值电压来确定电荷损失补偿; 或跟踪主存储器的每个块，并逐个逐块地确定电荷损耗和补偿。