公开(公告)号：US09991335B2

公开(公告)日：2018-06-05

申请号：US14890659

申请日：2014-11-18

Applicant: POWDEC K.K.

Inventor： Shoko Echigoya ,  Fumihiko Nakamura ,  Shuichi Yagi ,  Souta Matsumoto ,  Hiroji Kawai

IPC: H01L29/15 ,  H01L29/06 ,  H01L29/861 ,  H01L29/778 ,  H01L29/872 ,  H01L29/205 ,  H01L29/207 ,  H01L29/739 ,  H01L29/417 ,  H01L29/423 ,  H01L29/10 ,  H01L29/20

CPC classification number: H01L29/0634 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0657 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7393 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/861 ,  H01L29/872 ,  H01L2224/81 ,  H01L2224/85

Abstract: Provided are a semiconductor device and a bidirectional field effect transistor which can easily overcome the tradeoff relation between the high voltage resistance and high speed in the semiconductor device using a polarization super junction, realize both the high voltage resistance and elimination of the occurrence of current collapse, operate at a high speed, and further the loss is low. The semiconductor device comprises a polarization super junction region and a p-electrode contact region. The polarization super junction region comprises an undoped GaN layer 11, an undoped AlxGa1-xN layer 12 with a thickness not smaller than 25 nm and not larger than 47 nm and 0.17≤x≤0.35, an undoped GaN layer 13 and a p-type GaN layer 14. When the reduced thickness tR is defined as tR=u+v(1+w×10−18) for the thickness u [nm] of the undoped GaN layer 13, the thickness v [nm] and the Mg concentration w [cm−3] of the p-type GaN layer 14, tR≥0.864/(x−0.134)+46.0 [nm] is satisfied. The p-electrode contact region comprises a p-type GaN contact layer formed to be in contact with the p-type GaN layer 14 and a p-electrode that is in contact with the p-type GaN contact layer.