公开(公告)号：US09865516B2

公开(公告)日：2018-01-09

申请号：US14992013

申请日：2016-01-10

Applicant: Micron Technology, Inc.

Inventor： Tzung-Han Lee ,  Chun-Yi Wu ,  Sheng-Yu Yan ,  Yi-Ting Cheng

IPC: H01L21/66 ,  H01L23/528 ,  H01L23/00 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L22/32 ,  H01L21/7685 ,  H01L21/76892 ,  H01L22/34 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/05005 ,  H01L2224/06102 ,  H01L2924/2064

Abstract: A wafer and a forming method thereof are provided. The wafer has a die region and a scribe-line region adjacent to the die region, and includes a conductive bonding pad in the die region of the wafer and a wafer acceptance test (WAT) pad in the scribe-line region of the wafer. A top surface of the WAT pad is lower than a top surface of the conductive bonding pad.