公开(公告)号：US11889693B2

公开(公告)日：2024-01-30

申请号：US17366471

申请日：2021-07-02

Applicant: Micron Technology, Inc.

Inventor： Srikant Jayanti ,  Fatma Arzum Simsek-Ege ,  Pavan Kumar Reddy Aella

IPC: H10B43/27 ,  H10B41/27 ,  H01L21/311 ,  H01L21/28 ,  H01L29/66 ,  H01L29/788 ,  H01L21/02 ,  H01L21/3213 ,  H10B99/00 ,  H01L29/04 ,  H01L29/16 ,  H01L29/51 ,  H01L29/792 ,  H10B41/20

CPC classification number: H10B43/27 ,  H01L21/022 ,  H01L21/0234 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/32134 ,  H01L29/04 ,  H01L29/16 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/511 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7883 ,  H01L29/7889 ,  H10B41/27 ,  H10B99/00 ,  H01L29/7926 ,  H10B41/20

Abstract: Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

公开(公告)号：US20210335815A1

公开(公告)日：2021-10-28

申请号：US17366471

申请日：2021-07-02

Applicant: Micron Technology, Inc.

Inventor： Srikant Jayanti ,  Fatma Arzum Simsek-Ege ,  Pavan Kumar Reddy Aella

IPC: H01L27/11582 ,  H01L29/16 ,  H01L29/51 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/04 ,  H01L29/66 ,  H01L29/788 ,  H01L21/02 ,  H01L21/28 ,  H01L21/8239 ,  H01L27/11556 ,  H01L29/792 ,  H01L27/11551

Abstract: Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

公开(公告)号：US11063059B2

公开(公告)日：2021-07-13

申请号：US16052123

申请日：2018-08-01

Applicant: Micron Technology, Inc.

Inventor： Srikant Jayanti ,  Fatma Arzum Simsek-Ege ,  Pavan Kumar Reddy Aella

IPC: H01L27/115 ,  H01L29/788 ,  H01L27/11582 ,  H01L21/8239 ,  H01L21/311 ,  H01L21/28 ,  H01L27/11556 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/04 ,  H01L29/16 ,  H01L29/51 ,  H01L29/792 ,  H01L27/11551

Abstract: Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

公开(公告)号：US20160148949A1

公开(公告)日：2016-05-26

申请号：US15013298

申请日：2016-02-02

Applicant: Micron Technology, Inc.

Inventor： Srikant Jayanti ,  Fatma Arzum Simsek-Ege ,  Pavan Kumar Reddy Aella

IPC: H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/04 ,  H01L29/16

CPC classification number: H01L27/11582 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/8239 ,  H01L27/11551 ,  H01L27/11556 ,  H01L29/04 ,  H01L29/16 ,  H01L29/511 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7883 ,  H01L29/7889 ,  H01L29/7926

Abstract: Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

Abstract translation: 半导体结构可以包括交替的电介质材料和控制栅极的堆叠，与控制栅极横向相邻的电荷存储结构，每个电荷存储结构和横向相邻的控制栅之间的电荷块材料，以及延伸穿过堆叠 交替氧化物和控制门。 堆叠中的每个介电材料具有不同密度和/或不同的去除速率的至少两个部分。 还公开了制造这种半导体结构的方法。

公开(公告)号：US20180337195A1

公开(公告)日：2018-11-22

申请号：US16052123

申请日：2018-08-01

Applicant: Micron Technology, Inc.

Inventor： Srikant Jayanti ,  Fatma Arzum Simsek-Ege ,  Pavan Kumar Reddy Aella

IPC: H01L27/11582 ,  H01L29/788 ,  H01L21/02 ,  H01L29/66 ,  H01L29/51 ,  H01L29/16 ,  H01L29/04 ,  H01L27/11556 ,  H01L21/8239 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/28 ,  H01L27/11551 ,  H01L29/792

CPC classification number: H01L27/11582 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/8239 ,  H01L27/11551 ,  H01L27/11556 ,  H01L29/04 ,  H01L29/16 ,  H01L29/511 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7883 ,  H01L29/7889 ,  H01L29/7926

Abstract: Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

公开(公告)号：US10103160B2

公开(公告)日：2018-10-16

申请号：US15013298

申请日：2016-02-02

Applicant: Micron Technology, Inc.

Inventor： Srikant Jayanti ,  Fatma Arzum Simsek-Ege ,  Pavan Kumar Reddy Aella

IPC: H01L27/115 ,  H01L29/788 ,  H01L27/11582 ,  H01L21/28 ,  H01L21/8239 ,  H01L21/311 ,  H01L27/11556 ,  H01L29/66 ,  H01L29/04 ,  H01L29/16 ,  H01L29/51 ,  H01L21/02 ,  H01L21/3213 ,  H01L29/792 ,  H01L27/11551

Abstract: Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

公开(公告)号：US09275909B2

公开(公告)日：2016-03-01

申请号：US13964282

申请日：2013-08-12

Applicant: Micron Technology, Inc.

Inventor： Srikant Jayanti ,  Fatma Arzum Simsek-Ege ,  Pavan Kumar Reddy Aella

IPC: H01L21/336 ,  H01L21/8239 ,  H01L21/28 ,  H01L21/311 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792 ,  H01L27/115

CPC classification number: H01L27/11582 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/8239 ,  H01L27/11551 ,  H01L27/11556 ,  H01L29/04 ,  H01L29/16 ,  H01L29/511 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7883 ,  H01L29/7889 ,  H01L29/7926

Abstract: Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

Abstract translation: 半导体结构可以包括交替的电介质材料和控制栅极的堆叠，与控制栅极横向相邻的电荷存储结构，每个电荷存储结构和横向相邻的控制栅之间的电荷块材料，以及延伸穿过堆叠 交替氧化物和控制门。 堆叠中的每个介电材料具有不同密度和/或不同的去除速率的至少两个部分。 还公开了制造这种半导体结构的方法。

公开(公告)号：US20150041879A1

公开(公告)日：2015-02-12

申请号：US13964282

申请日：2013-08-12

Applicant: Micron Technology, Inc.

Inventor： Srikant Jayanti ,  Fatma Arzum Simsek-Ege ,  Pavan Kumar Reddy Aella

IPC: H01L29/66 ,  H01L29/792 ,  H01L21/28

CPC classification number: H01L27/11582 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/8239 ,  H01L27/11551 ,  H01L27/11556 ,  H01L29/04 ,  H01L29/16 ,  H01L29/511 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7883 ,  H01L29/7889 ,  H01L29/7926

Abstract: Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

Abstract translation: 半导体结构可以包括交替的电介质材料和控制栅极的堆叠，与控制栅极横向相邻的电荷存储结构，每个电荷存储结构和横向相邻的控制栅之间的电荷块材料，以及延伸穿过堆叠 交替氧化物和控制门。 堆叠中的每个介电材料具有不同密度和/或不同的去除速率的至少两个部分。 还公开了制造这种半导体结构的方法。