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公开(公告)号：US11081631B2
公开(公告)日：2021-08-03
申请号：US16921748
申请日：2020-07-06
Applicant: Maven Optronics Co., Ltd.
Inventor： Chieh Chen , Chia-Hsien Chang
IPC: H01L33/60 , G02F1/13357 , H01L33/10 , H01L33/36 , H01L33/58 , H01L33/46 , H01L33/50 , H01L33/54
Abstract: An asymmetrically shaped chip-scale packaging (CSP) light-emitting device (LED) includes an LED chip, a photoluminescent structure (or a light-transmitting structure), and a reflective structure. The photoluminescent structure covers the upper surface and/or the edge surface of the LED chip; and the reflective structure at least partially covers the edge surface of the photoluminescent structure. The reflective structure partially reflects the primary light emitted from the edge surface of the LED chip or the converted secondary light radiated from the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically.
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公开(公告)号：US10797102B2
公开(公告)日：2020-10-06
申请号：US16355682
申请日：2019-03-15
Applicant: MAVEN OPTRONICS CO., LTD.
Inventor： Chieh Chen , Chia-Hsien Chang
Abstract: A chip-scale linear light-emitting device includes a submount substrate, light-emitting diode (LED) semiconductor chips, a chip-scale packaging structure and a reflective structure. The LED semiconductor chips, the packaging structure and the reflective structure are disposed on the submount substrate, wherein the packaging structure partially covers the chip-upper surface and/or the chip-edge surfaces of the LED semiconductor chips, and the reflective structure partially covers the package-top surface and/or the package-side surfaces of the packaging structure. If one of the chip-edge surfaces and the package-side surface of the packaging structure are exposed from the reflective structure as a primary light-emitting side surface, a side-view type linear light-emitting device is formed. If the package-top surface of the packaging structure is exposed from the reflective structure as a primary light-emitting top surface, a top-view type linear light-emitting device is formed. A substantially transparent light-transmitting material and/or a photoluminescent material can be configured to be included inside the packaging structure. In this configuration, a primary light emitted from the LED semiconductor chips is directed to pass through the packaging structure and radiated outward from the primary light-emitting surface. Therefore, a monochromatic light or a white light with a uniformly distributed linear radiation pattern can be generated using the chip-scale linear light-emitting device.
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公开(公告)号：US11227891B2
公开(公告)日：2022-01-18
申请号：US17063417
申请日：2020-10-05
Applicant: MAVEN OPTRONICS CO., LTD.
Inventor： Chieh Chen , Chia-Hsien Chang
Abstract: A chip-scale linear light-emitting device includes a submount substrate, light-emitting diode (LED) semiconductor chips, a chip-scale packaging structure and a reflective structure. The LED semiconductor chips, the packaging structure and the reflective structure are disposed on the submount substrate, wherein the packaging structure partially covers the chip-upper surface and/or the chip-edge surfaces of the LED semiconductor chips, and the reflective structure partially covers the package-top surface and/or the package-side surfaces of the packaging structure. If one of the chip-edge surfaces and the package-side surface of the packaging structure are exposed from the reflective structure as a primary light-emitting side surface, a side-view type linear light-emitting device is formed. If the package-top surface of the packaging structure is exposed from the reflective structure as a primary light-emitting top surface, a top-view type linear light-emitting device is formed. A substantially transparent light-transmitting material and/or a photoluminescent material can be configured to be included inside the packaging structure. In this configuration, a primary light emitted from the LED semiconductor chips is directed to pass through the packaging structure and radiated outward from the primary light-emitting surface. Therefore, a monochromatic light or a white light with a uniformly distributed linear radiation pattern can be generated using the chip-scale linear light-emitting device.
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公开(公告)号：US10522728B2
公开(公告)日：2019-12-31
申请号：US15877329
申请日：2018-01-22
Applicant: MAVEN OPTRONICS CO., LTD.
Inventor： Chieh Chen , Tsung-Hsi Wang
Abstract: A chip-scale packaging (CSP) light-emitting device (LED), including a light-emitting semiconductor die, a photoluminescent layer, a chip-side-spacer structure, and a beveled chip reflective structure, is disclosed. The beveled reflective structure is disposed surrounding the chip-edge surfaces of the light-emitting semiconductor die, wherein the chip-side-spacer structure is disposed between the beveled reflective structure and the chip-edge surfaces of the light-emitting semiconductor die. A manufacturing method to fabricate the CSP LED is also disclosed. The CSP LED with a beveled chip reflector can effectively reflect the light radiated from the light-emitting semiconductor die toward the photoluminescent layer so that the light extraction efficiency is improved.
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5.发明授权公开(公告)号：US10230030B2
公开(公告)日：2019-03-12
申请号：US15416921
申请日：2017-01-26
Applicant: MAVEN OPTRONICS CO., LTD.
Inventor： Chieh Chen , Tsung-Hsi Wang
Abstract: A monochromatic chip-scale packaging (CSP) light emitting diode (LED) device with an asymmetrical radiation pattern, including a flip-chip LED semiconductor die, and a reflective structure, is disclosed. A white-light broad-spectrum CSP LED device with asymmetrical radiation pattern is also disclosed by further including a photoluminescent structure in the CSP LED device. The photoluminescent structure covers at least the upper surface of the LED semiconductor die. The reflective structure adjacent to the LED semiconductor die and the photoluminescent structure reflects at least partial light beam emitted from the edge surface of the LED semiconductor die or the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically. A method to fabricate the aforementioned CSP LED device is also disclosed. Without using additional optical lens, the CSP LED device is suitable for the applications requiring asymmetrical illuminations, while keeping the advantage of its compact form factor.
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Patent Agency Ranking
公开(公告)号：US11335842B2
公开(公告)日：2022-05-17
申请号：US16275168
申请日：2019-02-13
Applicant: MAVEN OPTRONICS CO., LTD.
Inventor： Chieh Chen
Abstract: A chip-scale packaging (CSP) light-emitting device (LED) is provided with an electrode polarity identifier, and includes a light-emitting semiconductor chip and a packaging structure. A first horizontal direction and a perpendicular second horizontal direction are specified on a semiconductor-chip-upper surface. The packaging structure covers the semiconductor-chip-upper surface, a first semiconductor-chip-side surface and a second semiconductor-chip-side surface of the light-emitting semiconductor chip, and includes a first package-side surface and a second package-side surface. A first region is between the first package-side surface and the first semiconductor-chip-side surface, and a second region is between the second package-side surface and the second semiconductor-chip-side surface, wherein an area of the first region is different from an area of the second region. An orientation of the electrode polarity of the CSP LED can be visually identified by recognizing the area difference of the first region and the second region.
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公开(公告)号：US10693046B2
公开(公告)日：2020-06-23
申请号：US15389417
申请日：2016-12-22
Applicant: MAVEN OPTRONICS CO., LTD.
Inventor： Chieh Chen , Tsung-Hsi Wang
Abstract: A Chip-Scale Packaging (CSP) LED device and a method of manufacturing the same are disclosed. The CSP LED device includes a flip-chip LED semiconductor die and a packaging structure, wherein the packaging structure comprises a soft buffer layer, a photoluminescent structure and an encapsulant structure. The soft buffer layer includes a top portion formed on top of the flip-chip LED semiconductor die, and an edge portion formed covering an edge surface of the flip-chip LED semiconductor die, wherein the top portion has a convex surface, and the edge portion has an extension surface smoothly adjoining the convex surface. The photoluminescent structure is formed on the soft buffer layer covering the convex surface and the extension surface of the soft buffer layer. The encapsulant structure, which has a hardness not lower than that of the buffer layer, is formed on the photoluminescent structure. Therefore, the CSP LED device has improved reliability by improving adhesion strength between the flip-chip LED semiconductor die and the packaging structure, and improved optical performance such as more consistent correlated color temperature (CCT), more uniform spatial color, and higher optical efficacy.
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公开(公告)号：US10797209B2
公开(公告)日：2020-10-06
申请号：US15423513
申请日：2017-02-02
Applicant: MAVEN OPTRONICS CO., LTD.
Inventor： Chieh Chen , Tsung-Hsi Wang
Abstract: A chip scale packaging (CSP) light emitting diode (LED) device includes a flip-chip LED semiconductor die and a beam shaping structure (BSS) to form a monochromatic CSP LED device. A photoluminescent structure can be disposed on the LED semiconductor die to form a phosphor-converted white-light CSP LED device. The BSS is fabricated by dispersing light scattering particles with concentration equal to or less than 30% by weight into a polymer resin material, and is disposed adjacent to the edge portion of the photoluminescent structure or the LED semiconductor die; or disposed remotely above the photoluminescent structure or the LED semiconductor die. The BSS disposed at the edge portion of the device can reduce the edge-emitting light of the device; while the BSS disposed at the top portion of the device can reduce the top-emitting light of the device, therefore shaping the radiation pattern and the viewing angle of the device.
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公开(公告)号：US10763404B2
公开(公告)日：2020-09-01
申请号：US15280927
申请日：2016-09-29
Applicant: MAVEN OPTRONICS CO., LTD.
Inventor： Chieh Chen , Tsung-Hsi Wang
Abstract: A light emitting device, including an LED semiconductor die, a photoluminescent structure and a reflector, is disclosed. The photoluminescent structure with a beveled edge surface is disposed on top of the LED semiconductor die, wherein a lower surface of the photoluminescent structure adheres to an upper surface of the LED semiconductor die. A reflective resin material is disposed surrounding edge surfaces of the LED semiconductor die and the photoluminescent structure forming a beveled reflector. A method to manufacture the above light emitting device is also disclosed. Advantages of this light emitting device with beveled reflector include increasing the light extraction efficiency, making the viewing angle tunable, improving spatial color uniformity and reducing the light source etendue realized in a compact form-factor size.
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公开(公告)号：US10749086B2
公开(公告)日：2020-08-18
申请号：US16040492
申请日：2018-07-19
Applicant: MAVEN OPTRONICS CO., LTD.
Inventor： Chieh Chen , Chia-Hsien Chang
IPC: H01L33/60 , G02F1/13357 , H01L33/10 , H01L33/36 , H01L33/58 , H01L33/46 , H01L33/50 , H01L33/54
Abstract: An asymmetrically shaped chip-scale packaging (CSP) light-emitting device (LED) includes an LED chip, a photoluminescent structure (or a light-transmitting structure), and a reflective structure. The photoluminescent structure covers the upper surface and/or the edge surface of the LED chip; and the reflective structure at least partially covers the edge surface of the photoluminescent structure. The reflective structure partially reflects the primary light emitted from the edge surface of the LED chip or the converted secondary light radiated from the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically.
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