METHODS OF FORMING DIAMOND COMPOSITE CMP PAD CONDITIONER

    公开(公告)号:US20220297260A1

    公开(公告)日:2022-09-22

    申请号:US17805351

    申请日:2022-06-03

    Abstract: Methods of forming chemical-mechanical polishing/planarization pad conditioner bodies made from diamond-reinforced reaction bonded silicon carbide, with diamond particles protruding or “standing proud” of the rest of the surface, and uniformly distributed on the cutting surface. In one embodiment, the diamond particles are approximately uniformly distributed throughout the composite, but in other embodiments they are preferentially located at and near the conditioning surface. The tops of the diamond particles can be engineered to be at a constant elevation (i.e., the conditioner body can be engineered to be very flat). Exemplary shapes of the body may be disc or toroidal. The diamond particles can be made to protrude from the conditioning surface by preferentially eroding the Si/SiC matrix. The eroding may be accomplished by electrical discharge machining or by lapping/polishing with abrasive.

    Diamond composite CMP pad conditioner

    公开(公告)号:US11370082B2

    公开(公告)日:2022-06-28

    申请号:US15481443

    申请日:2017-04-06

    Abstract: A chemical-mechanical polishing/planarization pad conditioner body made from diamond-reinforced reaction bonded silicon carbide, with diamond particles protruding or “standing proud” of the rest of the surface, and uniformly distributed on the cutting surface. In one embodiment, the diamond particles are approximately uniformly distributed throughout the composite, but in other embodiments they are preferentially located at and near the conditioning surface. The tops of the diamond particles can be engineered to be at a constant elevation (i.e., the conditioner body can be engineered to be very flat). Exemplary shapes of the body may be disc or toroidal. The diamond particles can be made to protrude from the conditioning surface by preferentially eroding the Si/SiC matrix. The eroding may be accomplished by electrical discharge machining or by lapping/polishing with abrasive.

    FILM ELECTRODE FOR ELECTROSTATIC CHUCK
    6.
    发明申请

    公开(公告)号:US20180047605A1

    公开(公告)日:2018-02-15

    申请号:US15683747

    申请日:2017-08-22

    Abstract: A perforated film electrode for a pinned electrostatic chuck that lies below the top surface of the pins in the valleys or interstices between pins, below the elevation of the top surface of the pins, and is attached to the body of the chuck. In one embodiment, the perforated film electrode assembly features a thin film electrode sandwiched between thin sheets of electrically insulating material. The top, outer or exposed surface of the perforated film electrode assembly has a flatness that is maintained within 3 microns. That is, the distance or elevation between the tops of the pins and the top surface of the perforated film unit is maintained within plus or minus 3 microns. A tool for producing a uniform elevation of the top and bottom sheets or layers of electrically insulating material also is taught.

    Film electrode for electrostatic chuck

    公开(公告)号:US10679884B2

    公开(公告)日:2020-06-09

    申请号:US15683747

    申请日:2017-08-22

    Abstract: A perforated film electrode for a pinned electrostatic chuck that lies below the top surface of the pins in the valleys or interstices between pins, below the elevation of the top surface of the pins, and is attached to the body of the chuck. In one embodiment, the perforated film electrode assembly features a thin film electrode sandwiched between thin sheets of electrically insulating material. The top, outer or exposed surface of the perforated film electrode assembly has a flatness that is maintained within 3 microns. That is, the distance or elevation between the tops of the pins and the top surface of the perforated film unit is maintained within plus or minus 3 microns. A tool for producing a uniform elevation of the top and bottom sheets or layers of electrically insulating material also is taught.

    Wafer pin chuck fabrication and repair

    公开(公告)号:US09941148B2

    公开(公告)日:2018-04-10

    申请号:US15062168

    申请日:2016-03-06

    Inventor: Edward Gratrix

    Abstract: In a wafer chuck design featuring pins or “mesas” making up the support surface, engineering the pins to have an annular shape, or to contain holes or pits, minimizes sticking of the wafer, and improves wafer settling. In another aspect of the invention is a tool and method for imparting or restoring flatness and roughness to a surface, such as the support surface of a wafer chuck. The tool is shaped such that the contact to the surface being treated is a circle or annulus. The treatment method may take place in a dedicated apparatus, or in-situ in semiconductor fabrication apparatus. The tool is smaller than the diameter of the wafer pin chuck, and may be approximate to the spatial frequency of the high spots to be lapped. The movement of the tool relative to the support surface is such that all areas of the support surface may be processed by the tool, or only those areas needing correction.

    Diamond Composite CMP Pad Conditioner
    10.
    发明申请

    公开(公告)号:US20170291279A1

    公开(公告)日:2017-10-12

    申请号:US15481443

    申请日:2017-04-06

    CPC classification number: B24B53/017 B24B53/12

    Abstract: A chemical-mechanical polishing/planarization pad conditioner body made from diamond-reinforced reaction bonded silicon carbide, with diamond particles protruding or “standing proud” of the rest of the surface, and uniformly distributed on the cutting surface. In one embodiment, the diamond particles are approximately uniformly distributed throughout the composite, but in other embodiments they are preferentially located at and near the conditioning surface. The tops of the diamond particles can be engineered to be at a constant elevation (i.e., the conditioner body can be engineered to be very flat). Exemplary shapes of the body may be disc or toroidal. The diamond particles can be made to protrude from the conditioning surface by preferentially eroding the Si/SiC matrix. The eroding may be accomplished by electrical discharge machining or by lapping/polishing with abrasive.

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