公开(公告)号：US10255988B2

公开(公告)日：2019-04-09

申请号：US15939443

申请日：2018-03-29

Applicant: LAPIS SEMICONDUCTOR CO., LTD.

Inventor： Shuhei Kamano

IPC: G11C29/50 ,  G11C11/401 ,  G11C29/02 ,  G11C29/24

Abstract: A semiconductor memory device includes: a memory cell including a first cell that stores data, and a second cell that stores complementary data that is complementary to the data; a redundant memory cell including a third cell that stores margined complementary data in which a margin is added to the complementary data, and a fourth cell that stores margined data in which a margin is added to the data; and a controller that causes the data and the margined complementary data to be compared and a test of the first cell to be executed, and the complementary data and the margined data to be compared and a test of the second cell to be executed.

公开(公告)号：US09865312B2

公开(公告)日：2018-01-09

申请号：US15417386

申请日：2017-01-27

Applicant: LAPIS Semiconductor Co., Ltd.

Inventor： Shuhei Kamano

IPC: G11C7/10 ,  G11C5/14 ,  G11C7/12 ,  G11C16/20 ,  G11C16/26 ,  G11C5/06

CPC classification number: G11C7/1069 ,  G11C5/066 ,  G11C5/148 ,  G11C7/1006 ,  G11C7/1051 ,  G11C7/12 ,  G11C16/20 ,  G11C16/26 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/0407

Abstract: A semiconductor device includes an output driver having a variable current driving ability, for outputting an amplified data signal to the outside through a transmission line; a nonvolatile memory having a specific area for storing output adjustment data to adjust the current driving ability of the output driver; an output adjustment data readout unit for reading out the output adjustment data from the specific area of the memory in response to powering on; and a current driving ability adjustment unit for adjusting the current driving ability of the output driver on the basis of the output adjustment data read out from the memory.