Abstract:
There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC semiconductor substrate (1), a cathode electrode (5) that comes into ohmic contact with a main surface (1b) of one side of the SiC semiconductor substrate (1), a first semiconductor region (6a) that is made of p type SiC formed in a main surface (1a) of the other side of the SiC semiconductor substrate (1), a second semiconductor region (6b) that is made of an n type SiC formed in the main surface (1a) of the other side, an ohmic junction layer (7) that comes into ohmic contact with the first semiconductor region (1a), and a Schottky junction layer (8) that comes into Schottky contact with the second semiconductor region (6b), wherein a root mean square roughness for a surface of the ohmic junction layer (7) is 20 nm or less.
Abstract:
An image recognition apparatus comprising: an obtaining unit configured to obtain one or more images; a detection unit configured to detect a target object image from each of one or more images; a cutting unit configured to cut out one or more local regions from the target object image; a feature amount calculation unit configured to calculate a feature amount from each of one or more local regions to recognize the target object; a similarity calculation unit configured to calculate, for each of one or more local regions, a similarity between the feature amounts; and a registration unit configured to, if there is a pair of feature amounts whose similarity is not less than a threshold, register, for each of one or more regions, one of the feature amounts as dictionary data for the target object.
Abstract:
An image recognition apparatus comprising: an obtaining unit configured to obtain one or more images; a detection unit configured to detect a target object image from each of one or more images; a cutting unit configured to cut out one or more local regions from the target object image; a feature amount calculation unit configured to calculate a feature amount from each of one or more local regions to recognize the target object; a similarity calculation unit configured to calculate, for each of one or more local regions, a similarity between the feature amounts; and a registration unit configured to, if there is a pair of feature amounts whose similarity is not less than a threshold, register, for each of one or more regions, one of the feature amounts as dictionary data for the target object.
Abstract:
There is provided a silicon carbide semiconductor device equipped with an ohmic electrode that exhibits both low contact resistance and favorable surface conditions, the silicon carbide semiconductor device including a p-type silicon carbide single crystal, and an ohmic electrode for the p-type silicon carbide single crystal, wherein the ohmic electrode includes an alloy layer containing at least titanium, aluminum and silicon, and ratios of titanium, aluminum, and silicon in the alloy layer are Al: 40 to 70% by mass, Ti: 20 to 50% by mass, and Si: 1 to 15% by mass.
Abstract:
There is provided a semiconductor device including an ohmic junction layer which is excellent in surface flatness and uniformity of composition in an interface with a semiconductor substrate and thus can give a sufficiently high adhesiveness with a Schottky junction layer. Such a semiconductor device includes an n type SiC semiconductor substrate (1), a cathode electrode (5) that comes into ohmic contact with a main surface (1b) of one side of the SiC semiconductor substrate (1), a first semiconductor region (6a) that is made of p type SiC formed in a main surface (1a) of the other side of the SiC semiconductor substrate (1), a second semiconductor region (6b) that is made of an n type SiC formed in the main surface (1a) of the other side, an ohmic junction layer (7) that comes into ohmic contact with the first semiconductor region (1a), and a Schottky junction layer (8) that comes into Schottky contact with the second semiconductor region (6b), wherein a root mean square roughness for a surface of the ohmic junction layer (7) is 20 nm or less.
Abstract:
An image processing apparatus obtains a difference between a partial region of an input image and a partial region of a background image, stored in a storage device, corresponding to the partial region of the input image, determines whether each partial region of the input image is a moving body region or a background region based on the difference, and combines the partial region of the input image determined as the background region and the partial region of the background image corresponding to the partial region of the input image to update the background image.
Abstract:
When discriminating a plurality of types of objects, a plurality of local feature quantities are extracted from local regions in an image, and positions of the local regions, and attributes according to image characteristics of the local feature quantities are stored in correspondence with each other. Then, object likelihoods with respect to a plurality of objects are determined from attributes of feature quantities in a region-of-interest, an object whose object likelihood is not less than a threshold value is determined as an object candidate, and whether an object candidate is a predetermined object is determined.
Abstract:
An image processing apparatus comprises an extractor for extracting a brightness component from image data; a scale converter for obtaining a distribution of the brightness component on relatively large scale; a brightness component improver for improving the distribution of the brightness component of the image data by using the brightness component and an output of the converter; and an image reproducer for reproducing the image data by using an output of the improver as a distribution of a brightness component of a new image, wherein the apparatus further comprises a face detector for detecting a face area from the image data, and the improver adjusts a degree of improvement by using a distribution of a brightness component of the face area being an output of the detector. Thus, it is possible to automatically adjust the degree of improvement of the luminance distribution according to the image data to be processed.
Abstract:
A method and apparatus obtains an image of a proper brightness in various scenes in which it is difficult to appropriately determine the brightness of an image. The apparatus includes a unit which extracts luminance components from image data, a unit which obtains on a predetermined scale the distribution of the extracted luminance components, a unit which sets a middle luminance value for the image data, corrects a luminance value larger than the middle luminance value in the converted luminance distribution to decrease a luminance value before scale conversion that corresponds to the larger luminance value, and corrects a luminance value smaller than the middle luminance value to increase a luminance value before scale conversion that corresponds to the smaller luminance value, and a unit which reproduces the image data by using the enhanced luminance distribution as a new image luminance distribution.
Abstract:
A vapor grown carbon fiber, each fiber filament of the carbonfiber having a branching degree of at least 0.15 occurrences/μm and a bulk density of 0.025 g/cm3 or less and a producing method of the carbon fiber by spraying a raw material solution containing a carbon source and a transition metallic compound into a reaction zone and subjecting the raw material solution to thermal decomposition, which is characterized in (1) spraying the raw material solution at a spray angle of 3° to 30° and (2) feeding a carrier gas through at least one site other than an inlet through which the raw material solution is sprayed, and a composite material comprising the carbon fiber.
Abstract translation:气相生长碳纤维,碳纤维的每个纤维长丝的支化度至少为0.15次/次,体积密度为0.025g / cm 3以下,碳纤维的制造方法是将含有 碳源和过渡金属化合物进入反应区,使原料溶液进行热分解,其特征在于(1)以3°〜30°的喷雾角度喷雾原料溶液,(2)将载体 气体通过喷射原料溶液的入口以外的至少一个位置,以及包含碳纤维的复合材料。