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    Dry etching method or dry cleaning method
    2.
    发明授权
    Dry etching method or dry cleaning method 有权

    公开(公告)号：US11584989B2

    公开(公告)日：2023-02-21

    申请号：US16497495

    申请日：2018-03-26

    Applicant: KANTO DENKA KOGYO CO., LTD.

    Inventor： Yoshinao Takahashi ,  Katsuya Fukae ,  Korehito Kato

    IPC: C23C16/44 ,  B08B5/00 ,  B08B7/00 ,  B08B7/04 ,  C23C16/24

    Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.
    By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

    Dry etching method or dry cleaning method
    3.
    发明授权
    Dry etching method or dry cleaning method 有权

    公开(公告)号：US11814726B2

    公开(公告)日：2023-11-14

    申请号：US18145343

    申请日：2022-12-22

    Applicant: KANTO DENKA KOGYO CO., LTD.

    Inventor： Yoshinao Takahashi ,  Katsuya Fukae ,  Korehito Kato

    IPC: C23C16/44 ,  B08B5/00 ,  B08B7/00 ,  B08B7/04 ,  C23C16/24

    CPC classification number: C23C16/4405 ,  B08B5/00 ,  B08B7/0071 ,  B08B7/04 ,  C23C16/24

    Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.
    By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

    Cleaning method of semiconductor manufacturing device
    7.
    发明授权
    Cleaning method of semiconductor manufacturing device 有权

    公开(公告)号：US11434565B2

    公开(公告)日：2022-09-06

    申请号：US16091202

    申请日：2017-03-29

    Applicant: KANTO DENKA KOGYO CO., LTD.

    Inventor： Yoshinao Takahashi ,  Korehito Kato

    IPC: C23C16/44 ,  H01L21/205 ,  H01L21/31 ,  H01L21/02

    Abstract: This invention provides a cleaning method that uses a cleaning gas composition for a semiconductor manufacturing device, including a monofluorohalogen compound represented by XF (in which X is Cl, Br or I) as the main component, and provides a method for removing unwanted film, such as a Si-containing deposit, attached to the interior of the processing room or processing vessel after a processing operation without damaging the interior of the processing room or processing vessel using such monofluorohalogen compound.

    Plasma etching method using gas molecule containing sulfur atom
    8.
    发明授权
    Plasma etching method using gas molecule containing sulfur atom 有权

    公开(公告)号：US11315797B2

    公开(公告)日：2022-04-26

    申请号：US15733949

    申请日：2019-06-21

    Applicant: KANTO DENKA KOGYO CO., LTD.

    Inventor： Korehito Kato ,  Yoshinao Takahashi ,  Mitsuharu Shimoda ,  Yoshihiko Iketani

    IPC: H01L21/311 ,  H01J37/32

    Abstract: Provided is a plasma etching method that enables, in a semiconductor fabrication process, selective processing of a film consisting of a single material, such as SiO2 or SiN, or a composite material of SiO2 and SiN over a mask material as well as processing into satisfactorily vertical processed shapes.
    It is possible, for example, to enhance selectivity over a mask material or other materials excluding an etching target, to reduce damage on sidewalls, and to suppress etching in the lateral direction by generating a plasma of a gas compound having a thioether skeleton represented by general formula (1) or a mixed gas thereof and etching a film consisting of a composite material or a single material, such as SiO2 or SiN, thereby depositing a protective film that contains sulfur atoms and has a lower content of fluorine atoms than the cases of using common hydrofluorocarbon gases: general formula (1): Rf1—S—Rf2  (1) where Rf1 is a monovalent organic group represented by CxHyFz and Rf2 is a monovalent organic group represented by CaHbFc.

    Atomic layer etching using acid halide
    10.
    发明授权
    Atomic layer etching using acid halide 有权

    公开(公告)号：US11183393B2

    公开(公告)日：2021-11-23

    申请号：US16336535

    申请日：2018-09-14

    Applicant: KANTO DENKA KOGYO CO., LTD.

    Inventor： Korehito Kato ,  Katsuya Fukae ,  Yoshinao Takahashi

    IPC: H01L21/311

    Abstract: A method of atomic layer etching a silicon oxide film or a silicon nitride film is provided. Atomic layer etching (ALE) is performed by repeating three steps of (1) hydrogenation step of hydrogenating a surface by irradiating a silicon oxide film or a silicon nitride film with a plasma containing H, (2) acid halide adsorption step of causing chemisorption of an acid halide represented by a formula of Rf—COX (Rf is H, F, a substituent consisting of C and F or consisting of C, H, and F, or —COX; each X is independently any halogen atom of F, Cl, Br and I) on the surface by reacting the acid halide with the hydrogenated surface through exposure to the acid halide, and (3) etching step of etching a single atomic layer by inducing chemical reactions on the surface of the acid halide-adsorbed silicon oxide film or silicon nitride film through irradiation with a plasma containing a noble gas (at least any one of He, Ar, Ne, Kr, and Xe).

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