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公开(公告)号：US08974989B2
公开(公告)日：2015-03-10
申请号：US13743231
申请日：2013-01-16
Applicant: Jozef Maria Finders
Inventor： Jozef Maria Finders
IPC: G03F1/38
Abstract: A lithographic mask has a substrate substantially transmissive for radiation of a certain wavelength, the substrate having a radiation absorbing material in an arrangement, the arrangement configured to apply a pattern to a cross-section of a radiation beam of the certain wavelength, wherein the absorbing material has a thickness which is substantially equal to the certain wavelength divided by a refractive index of the absorbing material.
Abstract translation: 光刻掩模具有基本上对于一定波长的辐射透射的衬底，该衬底具有布置的辐射吸收材料，该结构被配置为将图案应用于该特定波长的辐射束的横截面，其中吸收 材料的厚度基本上等于一定波长除以吸收材料的折射率。
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公开(公告)号：US20120200838A1
公开(公告)日：2012-08-09
申请号：US13446811
申请日：2012-04-13
Applicant: Laurentius Cornelius De Winter , Jozef Maria Finders
Inventor： Laurentius Cornelius De Winter , Jozef Maria Finders
IPC: G03B27/52
CPC classification number: G03B27/42 , G03F7/70308
Abstract: A method of increasing a depth of focus of a lithographic apparatus is disclosed. The method includes forming diffracted beams of radiation using a patterning device pattern; and transforming a phase-wavefront of a portion of the diffracted beams into a first phase-wavefront having a first focal plane for the lithographic apparatus, and a second phase-wavefront having a second, different focal plane, wherein the transforming comprises: subjecting a phase of a first portion of a first diffracted beam and a phase of a corresponding first portion of a second diffracted beam to a phase change which results in an at least partial formation of the first phase-wavefront, and subjecting a phase of a second portion of the first diffracted beam and a phase of a corresponding second portion of the second diffracted beam to a phase change which results in an at least partial formation of the second phase-wavefront.
Abstract translation: 公开了增加光刻设备的焦深的方法。 该方法包括使用图案形成装置图案形成衍射的辐射束; 以及将衍射光束的一部分的相位波前变换为具有用于所述光刻设备的第一焦平面的第一相位波前，以及具有第二不同焦平面的第二相位波前，其中所述变换包括：对 将第一衍射光束的第一部分的相位和第二衍射光束的对应的第一部分的相位相位改变为导致第一相位波段的至少部分形成，并且使第二部分的相位 并且所述第二衍射光束的对应的第二部分的相位变为导致第二相位波前的至少部分形成的相位变化。
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公开(公告)号：US20110211181A1
公开(公告)日：2011-09-01
申请号：US13102620
申请日：2011-05-06
Applicant: Bob STREEFKERK , Johannes Jacobus Matheus Baselmans , Adrianus Fransiscus Petrus Engelen , Jozef Maria Finders , Paul Graeupner , Johannes Catharinus Hubertus Mulkens , Jan Bernard Plechelmus Van Schoot
Inventor： Bob STREEFKERK , Johannes Jacobus Matheus Baselmans , Adrianus Fransiscus Petrus Engelen , Jozef Maria Finders , Paul Graeupner , Johannes Catharinus Hubertus Mulkens , Jan Bernard Plechelmus Van Schoot
IPC: G03B27/52
CPC classification number: G03F7/70341 , G03F7/70333
Abstract: In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.
Abstract translation: 在浸没光刻设备或设备制造方法中，在成像期间投影图像的焦点位置改变以增加焦点宽度。 在一个实施例中，焦点可以使用浸没式光刻设备的液体供应系统来改变。
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公开(公告)号：US07982856B2
公开(公告)日：2011-07-19
申请号：US12488291
申请日：2009-06-19
Applicant: Jozef Maria Finders
Inventor： Jozef Maria Finders
CPC classification number: G03F7/70141 , G03F7/70191 , G03F7/70466
Abstract: A lithographic apparatus includes a phase adjuster to adjust a phase of an optical wave traversing an optical element of the phase adjuster during exposure of a pattern on a substrate. In an embodiment, the optical element is a heat controllable optical element in a projection system of the lithographic apparatus. In use, the pattern is illuminated with an illumination mode including an off-axis radiation beam. This beam is diffracted into a number of first-order diffracted beams, one associated with a first pitch in the pattern, along a first direction, another associated with a second pitch along a different, second direction in the pattern. An area is identified where the first-order diffracted beam associated with the first pitch traverses the optical element. An image characteristic of an image of the pattern is optimized by calculating a desired optical phase of this first-order diffracted beam in relation to the optical phase of the other first-order diffracted beam. The phase adjuster is controlled to apply the desired optical phase to the first order diffracted beam.
Abstract translation: 光刻设备包括相位调节器，用于在曝光基板上的图案时调节穿过相位调节器的光学元件的光波的相位。 在一个实施例中，光学元件是光刻设备的投影系统中的热可控光学元件。 在使用中，用包括离轴辐射束的照明模式照亮图案。 该光束沿着第一方向被衍射成多个一阶衍射光束，一个与图案中的第一间距相关联，另一个与图案中沿着不同的第二方向的第二间距相关联。 识别与第一音调相关联的一阶衍射光束穿过光学元件的区域。 通过计算相对于其它一级衍射光束的光学相位的该一级衍射光束的期望光学相位来优化图案的图像的图像特性。 控制相位调节器以将期望的光学相位施加到一阶衍射光束。
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公开(公告)号：US20100161099A1
公开(公告)日：2010-06-24
申请号：US12633252
申请日：2009-12-08
Applicant: Everhardus Cornelis Mos , Mircea Dusa , Jozef Maria Finders , Christianus Gerardus Maria De Mol , Scott Anderson Middlebrooks , Dongzi Wangli
Inventor： Everhardus Cornelis Mos , Mircea Dusa , Jozef Maria Finders , Christianus Gerardus Maria De Mol , Scott Anderson Middlebrooks , Dongzi Wangli
Abstract: Variables in each step in a double patterning lithographic process are recorded and characteristics of intermediate features in a double patterning process measured. The final feature is then modeled, and the values of the variables optimized.
Abstract translation: 记录双重图案化平版印刷工艺中的每个步骤中的变量，并测量双重图案化工艺中的中间特征的特征。 然后对最终特征进行建模，并优化变量的值。
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Patent Agency Ranking
公开(公告)号：US07655368B2
公开(公告)日：2010-02-02
申请号：US10936727
申请日：2004-09-09
CPC classification number: G03F7/70333 , G03F7/70425
Abstract: A method for exposing a resist layer on a substrate to an image of a pattern on a mask is disclosed whereby, after starting exposure and before completing exposure, a controlled amount of contrast loss is introduced by a controller in the image at the resist layer by changing during exposure the position of the substrate holder. The contrast loss affects the pitch dependency of the resolution of a lithographic projection apparatus, and its control is used to match pitch dependency of resolution between different lithographic projection apparatus.
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7.发明授权Marker structure, mask pattern, alignment method and lithographic method and apparatus 有权标记结构，掩模图案，对准方法和光刻方法和装置公开(公告)号：US07466413B2
公开(公告)日：2008-12-16
申请号：US10887323
申请日：2004-07-09
Applicant: Jozef Maria Finders , Mircea Dusa , Richard Johannes Franciscus Van Haren , Luis Alberto Colina Santamaria Colina , Eric Henri Jan Hendrickx , Geert Vandenberghe , Alexander Hendrikus Martinus Van Der Hoff
Inventor： Jozef Maria Finders , Mircea Dusa , Richard Johannes Franciscus Van Haren , Luis Alberto Colina Santamaria Colina , Eric Henri Jan Hendrickx , Geert Vandenberghe , Alexander Hendrikus Martinus Van Der Hoff
IPC: G01B11/00
CPC classification number: G03F7/70633 , G03F7/70358 , G03F9/7076 , G03F9/7084
Abstract: A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.
Abstract translation: 用于利用光刻设备对基板上的标记结构进行成像的掩模图案，所述标记结构被配置为确定光学对准或覆盖，包括用于限定标记结构的组成部分。 组成部分包括多个片段，每个片段具有基本上具有器件特征和片段形状的尺寸。 掩模图案包括位于片段形状的关键部分的至少一个辅助特征。 所述至少一个辅助特征具有基本上小于光刻投影的分辨率的尺寸，并且被配置为抵消在关键部分处的光刻投影中产生的光学像差或光学限制。
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8.发明授权公开(公告)号：US07425397B2
公开(公告)日：2008-09-16
申请号：US11223154
申请日：2005-09-12
Applicant: Jozef Maria Finders , Armand Eugene Albert Koolen
Inventor： Jozef Maria Finders , Armand Eugene Albert Koolen
IPC: G03C5/00
CPC classification number: G03F7/70625 , G03F7/70083
Abstract: An illumination profile useable in a lithographic apparatus to match the output of a target lithographic apparatus is obtained by obtaining a reference CD vs. pitch function for the lithographic projection apparatus at at least a plurality of pitch values using a reference illumination profile; obtaining a target CD vs. pitch function at at least the plurality of pitch values; generating a CD sensitivity map for the lithographic projection apparatus for a given pattern; calculating from the reference CD vs. pitch function, the target CD vs. pitch function and the CD sensitivity map, a suitable illumination profile to be used in said lithographic apparatus to expose said given pattern.
Abstract translation: 通过使用参考照明轮廓以至少多个间距值获得用于光刻投影设备的参考CD对间距函数，获得可用于光刻设备中以匹配目标光刻设备的输出的照明轮廓; 在至少多个音调值上获得目标CD与音调函数; 产生用于给定图案的光刻投影装置的CD敏感度图; 从参考CD相对于音调函数，目标CD与音调函数和CD灵敏度映射计算要在所述光刻设备中使用以暴露所述给定图案的合适的照明轮廓。
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9.发明授权Lithographic apparatus, device manufacturing method, and device manufactured thereby 有权平版印刷设备，器件制造方法和由此制造的器件公开(公告)号：US06809797B2
公开(公告)日：2004-10-26
申请号：US10109038
申请日：2002-03-29
Applicant: Johannes Jacobus Matheus Baselmans , Adrianus Franciscus Petrus Engelen , Hugo Augustinus Joseph Cramer , Jozef Maria Finders , Carsten Kohler
Inventor： Johannes Jacobus Matheus Baselmans , Adrianus Franciscus Petrus Engelen , Hugo Augustinus Joseph Cramer , Jozef Maria Finders , Carsten Kohler
IPC: G02B2768
Abstract: A device manufacturing method is disclosed in which the aberration of the projection system of a lithographic projection apparatus is obtained in terms of the Zernike expansion. The field distribution of displacement error and focal plane distortion of the projected image are calculated on the basis of the Zernike aberration and sensitivity coefficients which quantify the relationship between Zernike aberration components and the error in the image. A calculation is then performed to determine the compensation to apply to the apparatus in order to minimize the error in the image. The compensation is then applied to the apparatus. The compensation may comprise increasing one component of aberration of the apparatus in order to decrease the effect of another aberration, such that, on balance, the image quality as a whole is improved.
Abstract translation: 公开了一种装置制造方法，其中光泽投影装置的投影系统的像差取得Zernike扩展。 基于Zernike像差和灵敏度系数计算投影图像的位移误差和焦平面失真的场分布，Zernike像差和灵敏度系数量化了Zernike像差分量与图像中的误差之间的关系。 然后执行计算以确定应用于装置的补偿，以使图像中的误差最小化。 然后将补偿应用于该装置。 补偿可以包括增加装置的像差的一个分量，以便减小另一个像差的影响，从而平衡地改善了整体上的图像质量。
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公开(公告)号：US08780325B2
公开(公告)日：2014-07-15
申请号：US12635933
申请日：2009-12-11
CPC classification number: G03F7/70266 , G03B27/54 , G03F7/70308 , G03F7/70525 , G03F7/70833 , G03F7/70891
Abstract: In an embodiment, there is provided a method of at least partially compensating for a deviation in a property of a pattern feature to be applied to a substrate using a lithographic apparatus. The method includes determining a desired phase change to be applied to at least a portion of a radiation beam that is to be used to apply the pattern feature to the substrate and which would at least partially compensate for the deviation in the property. The determination of the desired phase change includes determining a desired configuration of a phase modulation element. The method further includes implementing the desired phase change to the portion of the radiation beam when applying the pattern feature to the substrate, the implementation of the desired phase change comprising illuminating the phase modulation element with the portion of the radiation beam when the phase modulation element is in the desired configuration.
Abstract translation: 在一个实施例中，提供了一种至少部分地补偿使用光刻设备施加到基板的图案特征的特性的偏差的方法。 该方法包括确定要应用于要用于将图案特征应用于衬底的辐射束的至少一部分的期望相位变化，并且将至少部分地补偿该特性的偏差。 所需相位变化的确定包括确定相位调制元件的期望配置。 该方法还包括当将图案特征应用于衬底时，实现对辐射束的该部分的期望的相位变化，所述相位变化的实现包括当相位调制元件 处于所需的配置。
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