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    Methods of eliminating pattern collapse on photoresist patterns
    1.
    发明授权
    Methods of eliminating pattern collapse on photoresist patterns 有权

    公开(公告)号：US08552538B2

    公开(公告)日：2013-10-08

    申请号：US12656719

    申请日：2010-02-16

    Applicant: Jon Daley ,  Yoshiki Hishiro

    Inventor： Jon Daley ,  Yoshiki Hishiro

    IPC: H01L23/58

    CPC classification number: H01L21/0335 ,  G03F7/40

    Abstract: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.

    Phase change current density control structure
    2.
    发明授权
    Phase change current density control structure 有权
    相变电流密度控制结构

    公开(公告)号：US07943921B2

    公开(公告)日：2011-05-17

    申请号：US11304593

    申请日：2005-12-16

    Applicant: Jon Daley ,  Kristy A. Campbell

    Inventor： Jon Daley ,  Kristy A. Campbell

    IPC: H01L47/00

    CPC classification number: H01L45/1246 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1666

    Abstract: A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.

    Abstract translation: 一种相变存储元件及其形成方法。 存储元件包括第一和第二电极。 第一层相变材料位于第一和第二电极之间。 包括金属 - 硫族化物材料的第二层也在第一和第二电极之间，并且是相变材料和导电材料之一。 绝缘层位于第一和第二层之间。 绝缘层中至少有一个开口提供第一和第二层之间的接触。

    Process for erasing chalcogenide variable resistance memory bits
    3.
    发明授权
    Process for erasing chalcogenide variable resistance memory bits 有权
    擦除硫族化物可变电阻记忆位的过程

    公开(公告)号：US07643333B2

    公开(公告)日：2010-01-05

    申请号：US11745209

    申请日：2007-05-07

    Applicant: Jon Daley

    Inventor： Jon Daley

    IPC: G11C11/00 ,  G11C5/06

    CPC classification number: G11C13/0069 ,  G11C13/0011 ,  G11C13/0033 ,  G11C13/0097 ,  G11C16/3431 ,  G11C2013/009 ,  G11C2213/79

    Abstract: A method of erasing a chalcogenide variable resistance memory cell is provided. The chalcogenide variable resistance memory cell includes a p-doped substrate with an n-well and a chalcogenide variable resistance memory element. The method includes the step of applying to the variable resistance memory element a voltage that is less than a fixed voltage of the substrate. The applied voltage induces an erase current to flow from the p-doped substrate through the n-well and through the variable resistance memory element.

    Abstract translation: 提供了擦除硫族化物可变电阻存储单元的方法。 硫族化物可变电阻存储单元包括具有n阱和硫族化物可变电阻存储元件的p掺杂衬底。 该方法包括向可变电阻存储元件施加小于衬底的固定电压的电压的步骤。 施加的电压引起擦除电流从p掺杂衬底流过n阱并通过可变电阻存储元件。

    Phase change current density control structure
    6.
    发明申请
    Phase change current density control structure 有权
    相变电流密度控制结构

    公开(公告)号：US20070158631A1

    公开(公告)日：2007-07-12

    申请号：US11304593

    申请日：2005-12-16

    Applicant: Jon Daley ,  Kristy Campbell

    Inventor： Jon Daley ,  Kristy Campbell

    IPC: H01L29/02 ,  H01L47/00

    CPC classification number: H01L45/1246 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1666

    Abstract: A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.

    Abstract translation: 一种相变存储元件及其形成方法。 存储元件包括第一和第二电极。 第一层相变材料位于第一和第二电极之间。 包括金属 - 硫族化物材料的第二层也在第一和第二电极之间，并且是相变材料和导电材料之一。 绝缘层位于第一和第二层之间。 绝缘层中至少有一个开口提供第一和第二层之间的接触。

    Methods of eliminating pattern collapse on photoresist patterns
    7.
    发明申请
    Methods of eliminating pattern collapse on photoresist patterns 有权
    消除光刻胶图案上的图案崩溃的方法

    公开(公告)号：US20050224923A1

    公开(公告)日：2005-10-13

    申请号：US10819936

    申请日：2004-04-08

    Applicant: Jon Daley ,  Yoshiki Hishiro

    Inventor： Jon Daley ,  Yoshiki Hishiro

    IPC: G03F7/40 ,  H01L23/58

    CPC classification number: H01L21/0335 ,  G03F7/40

    Abstract: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.

    Abstract translation: 公开了一种用于处理光致抗蚀剂图案的稳定溶液以及防止轮廓异常，倾倒和抵抗基脚的方法。 稳定溶液包含非挥发性组分，例如在光致抗蚀剂材料已经显影之后施加的非挥发性颗粒或聚合物。 通过在显影之后但干燥之前用含有非挥发性成分的溶液处理光致抗蚀剂，非挥发性组分填充相邻抗蚀剂图案之间的空间，并在干燥期间保留在基材上。 非挥发性组分为抗蚀剂提供结构和机械支撑，以防止液体表面张力产生变形或塌陷。

    Phase change current density control structure
    8.
    发明授权
    Phase change current density control structure 有权
    相变电流密度控制结构

    公开(公告)号：US08847193B2

    公开(公告)日：2014-09-30

    申请号：US14033913

    申请日：2013-09-23

    Applicant: Jon Daley ,  Kristy A. Campbell

    Inventor： Jon Daley ,  Kristy A. Campbell

    IPC: H01L47/00 ,  H01L45/00

    CPC classification number: H01L45/1246 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1666

    Abstract: A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.

    Abstract translation: 一种相变存储元件及其形成方法。 存储元件包括第一和第二电极。 第一层相变材料位于第一和第二电极之间。 包括金属 - 硫族化物材料的第二层也在第一和第二电极之间，并且是相变材料和导电材料之一。 绝缘层位于第一和第二层之间。 绝缘层中至少有一个开口提供第一和第二层之间的接触。

    Methods of eliminating pattern collapse on photoresist patterns
    9.
    发明申请
    Methods of eliminating pattern collapse on photoresist patterns 有权

    公开(公告)号：US20100181656A1

    公开(公告)日：2010-07-22

    申请号：US12656719

    申请日：2010-02-16

    Applicant: Jon Daley ,  Yoshiki Hishiro

    Inventor： Jon Daley ,  Yoshiki Hishiro

    IPC: H01L29/00 ,  G03F7/20 ,  C09K3/00

    CPC classification number: H01L21/0335 ,  G03F7/40

    Abstract: A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.

    Memory array for increased bit density and method of forming the same
    10.
    发明申请
    Memory array for increased bit density and method of forming the same 有权
    用于增加位密度的存储器阵列及其形成方法

    公开(公告)号：US20100171091A1

    公开(公告)日：2010-07-08

    申请号：US12659612

    申请日：2010-03-15

    Applicant: Jon Daley

    Inventor： Jon Daley

    IPC: H01L45/00

    CPC classification number: H01L27/24

    Abstract: A memory array having a plurality of resistance variable memory units and method for forming the same are provided. Each memory unit includes a first electrode, a resistance variable material over the first electrode, and a first second-electrode over the resistance variable material. The first second-electrode is associated with the first electrode to define a first memory element. Each memory unit further includes a second second-electrode over the resistance variable material. The second-second electrode is associated with the first electrode to define a second memory element.

    Abstract translation: 提供具有多个电阻可变存储单元的存储器阵列及其形成方法。 每个存储单元包括第一电极，位于第一电极上方的电阻变化材料和电阻可变材料上的第一第二电极。 第一第二电极与第一电极相关联以限定第一存储元件。 每个存储器单元还包括位于电阻变化材料上的第二个第二电极。 第二电极与第一电极相关联以限定第二存储元件。

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