公开(公告)号：US07751035B2

公开(公告)日：2010-07-06

申请号：US12043906

申请日：2008-03-06

Applicant: Trudo Clarysse ,  Janusz Bogdanowicz

Inventor： Trudo Clarysse ,  Janusz Bogdanowicz

IPC: G01N23/00 ,  G01N21/00 ,  G01B15/00 ,  H01L21/00

CPC classification number: G01N21/1717 ,  G01R31/2648

Abstract: A method and device for determining, in a non-destructive way, at least the active carrier profile from an unknown semiconductor substrate are disclosed. In one aspect, the method comprises generating 2 m independent measurement values from the m reflected signals and correlating these 2 m measurement values with 2 m independent carrier profile values. The method further comprises generating additional 2 m measurement values to allow determining the active carrier profile and a second parameter profile by correlating the 4 m measurement values with the 4 m profile values. The method further comprises generating a total of 2 m[n.k] measurement values to allow determining [n.k] independent material parameter depth profiles, each material parameter profile having m points.

Abstract translation: 公开了一种用于以非破坏性方式至少从未知半导体衬底的有源载流子轮廓确定的方法和装置。 一方面，该方法包括从m个反射信号产生2m独立的测量值，并将这2m测量值与2m独立的载波分布值相关联。 该方法还包括产生另外的2m测量值，以通过将4m测量值与4m剖面值相关联来确定有效载波分布和第二参数分布。 该方法还包括产生总共2m [n.k]个测量值，以允许确定独立材料参数深度分布，每个材料参数分布具有m个点。

公开(公告)号：US20100002236A1

公开(公告)日：2010-01-07

申请号：US12492062

申请日：2009-06-25

Applicant: Janusz Bogdanowicz

Inventor： Janusz Bogdanowicz

IPC: G01N21/55

CPC classification number: G01N21/55 ,  G01N21/1717 ,  G01N2021/1719 ,  G01N2021/1725 ,  G01N2021/1731 ,  H01L22/12

Abstract: A method is disclosed for determining the inactive doping concentration of a semiconductor region using a PMOR method. In one aspect, the method includes providing two semiconductor regions having substantially the same known as-implanted concentration but known varying junction depths. The method includes determining on one of these semiconductor regions the as-implanted concentration. The semiconductor regions are then partially activated. PMOR measures are then performed on the partially activated semiconductor regions to measure (a) the signed amplitude of the reflected probe signal as function of junction depth and (b) the DC probe reflectivity as function of junction depth. The method includes extracting from these measurements the active doping concentration and then calculating the inactive doping concentration using the determined total as-implanted concentration and active doping concentration. The method may also include extracting thermal diffusivity, refraction index, absorption coefficient, and/or SRHF lifetime from these measurements.

Abstract translation: 公开了一种使用PMOR方法确定半导体区域的非活性掺杂浓度的方法。 在一个方面，该方法包括提供具有基本相同的已知植入浓度但是已知的变化的结深度的两个半导体区域。 该方法包括在这些半导体区域中的一个上确定注入的浓度。 然后半导体区域被部分激活。 然后对部分激活的半导体区域执行PMOR测量，以测量（a）反射探测信号的符号振幅作为结深度的函数，以及（b）DC探针反射率作为结深度的函数。 该方法包括从这些测量中提取有源掺杂浓度，然后使用确定的总注入浓度和有源掺杂浓度来计算非活性掺杂浓度。 该方法还可以包括从这些测量中提取热扩散率，折射率，吸收系数和/或SRHF寿命。

公开(公告)号：US20080224036A1

公开(公告)日：2008-09-18

申请号：US12043906

申请日：2008-03-06

Applicant: Trudo Clarysse ,  Janusz Bogdanowicz

Inventor： Trudo Clarysse ,  Janusz Bogdanowicz

IPC: G01N23/00 ,  G01B15/00

CPC classification number: G01N21/1717 ,  G01R31/2648

Abstract: A method and device for determining, in a non-destructive way, at least the active carrier profile from an unknown semiconductor substrate are disclosed. In one aspect, the method comprises generating 2m independent measurement values from the m reflected signals and correlating these 2m measurement values with 2m independent carrier profile values. The method further comprises generating additional 2m measurement values to allow determining the active carrier profile and a second parameter profile by correlating the 4m measurement values with the 4m profile values. The method further comprises generating a total of 2m[n.k] measurement values to allow determining [n.k] independent material parameter depth profiles, each material parameter profile having m points.

Abstract translation: 公开了一种用于以非破坏性方式至少从未知半导体衬底的有源载流子轮廓确定的方法和装置。 一方面，该方法包括从m个反射信号产生2m个独立的测量值，并将这2m测量值与2m独立的载波分布值相关联。 该方法还包括产生另外的2m测量值以允许通过将4m测量值与4m分布值相关联来确定有效载波分布和第二参数分布。 该方法还包括产生总共2m [n.k]个测量值，以允许确定[n.k]独立材料参数深度分布，每个材料参数分布具有m个点。

公开(公告)号：US08384904B2

公开(公告)日：2013-02-26

申请号：US12726173

申请日：2010-03-17

Applicant: Janusz Bogdanowicz

Inventor： Janusz Bogdanowicz

IPC: G01N21/55

CPC classification number: G01N21/1717 ,  G01N2021/1725 ,  H01L22/12

Abstract: A method of determining a value of a depth of a semiconductor junction of a substrate using a photomodulated optical reflectance measurement technique is disclosed. In one aspect, the method includes obtaining a substrate which has at least a first region including the semiconductor junction. The method further includes obtaining a reference region. the method further includes performing at least one sequence of: a) selecting a set of measurement parameters for the photomodulated optical reflectance measurement, b) measuring on the at least a first region a first optical signal representative of the substrate with the semiconductor junction using the selected set of parameters, c) measuring on the reference region a second optical signal using the selected set of parameters, and d) determining the ratio of the first optical signal to the second optical signal, and thereafter extracting from the ratio the depth of the semiconductor junction.

Abstract translation: 公开了使用光调制光反射测量技术确定衬底的半导体结的深度的值的方法。 一方面，该方法包括获得至少包括半导体结的第一区域的衬底。 该方法还包括获得参考区域。 该方法还包括执行以下至少一个序列：a）选择用于光调制光反射测量的一组测量参数，b）在至少第一区域上测量表示具有半导体结的衬底的第一光信号， 选择的参数集合，c）使用所选择的参数集在参考区域上测量第二光学信号，以及d）确定第一光学信号与第二光学信号的比率，然后从比率中提取第二光学信号的深度 半导体结。

公开(公告)号：US20100238449A1

公开(公告)日：2010-09-23

申请号：US12726173

申请日：2010-03-17

Applicant: Janusz Bogdanowicz

Inventor： Janusz Bogdanowicz

IPC: G01N21/55

CPC classification number: G01N21/1717 ,  G01N2021/1725 ,  H01L22/12

Abstract: A method of determining a value of a depth of a semiconductor junction of a substrate using a photomodulated optical reflectance measurement technique is disclosed. In one aspect, the method includes obtaining a substrate which has at least a first region including the semiconductor junction. The method further includes obtaining a reference region. the method further includes performing at least one sequence of: a) selecting a set of measurement parameters for the photomodulated optical reflectance measurement, b) measuring on the at least a first region a first optical signal representative of the substrate with the semiconductor junction using the selected set of parameters, c) measuring on the reference region a second optical signal using the selected set of parameters, and d) determining the ratio of the first optical signal to the second optical signal, and thereafter extracting from the ratio the depth of the semiconductor junction.

Abstract translation: 公开了使用光调制光反射测量技术确定衬底的半导体结的深度的值的方法。 一方面，该方法包括获得至少包括半导体结的第一区域的衬底。 该方法还包括获得参考区域。 该方法还包括执行以下至少一个序列：a）选择用于光调制光反射测量的一组测量参数，b）在至少第一区域上测量表示具有半导体结的衬底的第一光信号， 选择的参数集合，c）使用所选择的参数集在参考区域上测量第二光学信号，以及d）确定第一光学信号与第二光学信号的比率，然后从比率中提取第二光学信号的深度 半导体结。