公开(公告)号：US20240407178A1

公开(公告)日：2024-12-05

申请号：US18205727

申请日：2023-06-05

Applicant: International Business Machines Corporation

Inventor： Guy M. Cohen ,  Cheng-Wei Cheng ,  Matthew Joseph BrightSky ,  Daniel Piatek

IPC: H10B63/10 ,  H10B63/00 ,  H10N70/00 ,  H10N70/20

Abstract: A phase-change memory cell includes an insulating layer; a first electrode embedded in the insulating layer, wherein an outer end of the first electrode is locally flush with an outer surface of the insulating layer; a second electrode, larger than the first electrode, and spaced from the first electrode; a compositionally homogenous crystalline phase change material layer; and a highly oriented seed layer. A crystal structure of the homogenous phase change material layer is correlated with a crystal structure of the highly oriented seed layer. The compositionally homogenous phase change material layer and the highly oriented seed layer are located at least partially between the first and second electrodes.