公开(公告)号：US09384995B2

公开(公告)日：2016-07-05

申请号：US14635482

申请日：2015-03-02

Applicant: Intel Corporation

Inventor： Fatma Arzum Simsek-Ege ,  Krishna K Parat

IPC: H01L29/792 ,  H01L21/308 ,  H01L29/423 ,  H01L29/66 ,  H01L29/788 ,  H01L27/115 ,  H01L29/49

CPC classification number: H01L21/3088 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/32134 ,  H01L27/11524 ,  H01L27/11529 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/4933 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/7889 ,  H01L29/792 ,  H01L29/7926

Abstract: A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. During fabrication of the memory device, a tungsten salicide is utilized as an etch-stop layer in place of a conventionally used aluminum oxide to form channel pillars having a high aspect ratio. Use of the tungsten salicide is useful for eliminating an undesired etch-stop recess and an undesired floating gate that is formed when an Al oxide etch-stop layer is conventionally used.