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公开(公告)号:US20150255551A1
公开(公告)日:2015-09-10
申请号:US14700203
申请日:2015-04-30
Applicant: Infineon Technologies AG
Inventor: Martin Kerber , Matthias Stecher
IPC: H01L29/40
CPC classification number: H01L29/402 , H01F27/2804 , H01L23/5227 , H01L23/585 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/48463 , H01L2224/48465 , H01L2924/3025 , H01L2924/00
Abstract: One or more embodiments relate to a semiconductor structure, comprising: a conductive feature; an outer guard ring; and an inner guard ring between the outer guard ring and the conductive feature, the inner guard ring being electrically coupled to the conductive feature.
Abstract translation: 一个或多个实施例涉及半导体结构,包括:导电特征; 外护环; 以及在所述外保护环和所述导电特征之间的内保护环,所述内保护环电耦合到所述导电特征。
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公开(公告)号:US09048019B2
公开(公告)日:2015-06-02
申请号:US13625889
申请日:2012-09-25
Applicant: Infineon Technologies AG
Inventor: Martin Kerber , Matthias Stecher
IPC: H01L21/02 , H01F27/28 , H01L23/522 , H01L23/58 , H01L23/00
CPC classification number: H01L29/402 , H01F27/2804 , H01L23/5227 , H01L23/585 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/48463 , H01L2224/48465 , H01L2924/3025 , H01L2924/00
Abstract: One or more embodiments relate to a semiconductor structure, comprising: a conductive feature; an outer guard ring; and an inner guard ring between the outer guard ring and the conductive feature, the inner guard ring being electrically coupled to the conductive feature.
Abstract translation: 一个或多个实施例涉及半导体结构,包括:导电特征; 外护环; 以及在所述外保护环和所述导电特征之间的内保护环,所述内保护环电耦合到所述导电特征。
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公开(公告)号:US09466677B2
公开(公告)日:2016-10-11
申请号:US14700203
申请日:2015-04-30
Applicant: Infineon Technologies AG
Inventor: Martin Kerber , Matthias Stecher
IPC: H01L29/40 , H01L23/58 , H01L23/522 , H01F27/28 , H01L23/00
CPC classification number: H01L29/402 , H01F27/2804 , H01L23/5227 , H01L23/585 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/48463 , H01L2224/48465 , H01L2924/3025 , H01L2924/00
Abstract: One or more embodiments relate to a semiconductor structure, comprising: a conductive feature; an outer guard ring; and an inner guard ring between the outer guard ring and the conductive feature, the inner guard ring being electrically coupled to the conductive feature.
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公开(公告)号:US20130075861A1
公开(公告)日:2013-03-28
申请号:US13625889
申请日:2012-09-25
Applicant: Infineon Technologies AG
Inventor: Martin Kerber , Matthias Stecher
IPC: H01L27/06
CPC classification number: H01L29/402 , H01F27/2804 , H01L23/5227 , H01L23/585 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/05553 , H01L2224/48463 , H01L2224/48465 , H01L2924/3025 , H01L2924/00
Abstract: One or more embodiments relate to a semiconductor structure, comprising: a conductive feature; an outer guard ring; and an inner guard ring between the outer guard ring and the conductive feature, the inner guard ring being electrically coupled to the conductive feature.
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