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    Sensor for a semiconductor device
    4.
    发明授权
    Sensor for a semiconductor device 有权

    公开(公告)号：US10199291B2

    公开(公告)日：2019-02-05

    申请号：US15683460

    申请日：2017-08-22

    Applicant: Infineon Technologies AG

    Inventor： Andreas Riegler ,  Angelika Koprowski ,  Mathias Plappert ,  Frank Wolter

    IPC: H01L29/78 ,  H01L21/66 ,  H01L29/739 ,  H01L29/45 ,  H01L29/47

    Abstract: A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type; a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type; a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition; a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition; first electrical transmission means, the first electrical transmission means being arranged and configured for providing a first sense signal derived from an electrical parameter of the first metal contact to a first signal input of a sense signal processing unit; and second electrical transmission means separated from said first electrical transmission means, the second electrical transmission means being arranged and configured for providing a second sense signal derived from an electrical parameter of the second metal contact to a second signal input of said sense signal processing unit.

    Semiconductor Device and Insulated Gate Bipolar Transistor with Transistor Cells and Sensor Cell
    7.
    发明申请
    Semiconductor Device and Insulated Gate Bipolar Transistor with Transistor Cells and Sensor Cell 有权
    半导体器件和具有晶体管电池和传感器单元的绝缘栅双极晶体管

    公开(公告)号：US20160141403A1

    公开(公告)日：2016-05-19

    申请号：US14942623

    申请日：2015-11-16

    Applicant: Infineon Technologies AG

    Inventor： Andreas Riegler

    IPC: H01L29/739 ,  H01L23/535 ,  H01L29/10

    CPC classification number: H01L29/7397 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/4238

    Abstract: A transistor cell region of a semiconductor device includes transistor cells that are electrically connected to a first load electrode. An idle region includes a gate wiring structure that is electrically connected to gate electrodes of the transistor cells. A transition region, which is disposed between the transistor cell region and the idle region, includes at least one sensor cell that is electrically connected to a sense electrode. The at least one sensor cell is configured to convey a unipolar current during an on state of the transistor cells.

    Abstract translation: 半导体器件的晶体管单元区域包括电连接到第一负载电极的晶体管单元。 空闲区域包括电连接到晶体管单元的栅电极的栅极布线结构。 设置在晶体管单元区域和空闲区域之间的过渡区域包括电连接到感测电极的至少一个传感器单元。 至少一个传感器单元被配置为在晶体管单元的导通状态期间传送单极电流。

    Sensor for a semiconductor device
    8.
    发明授权
    Sensor for a semiconductor device 有权

    公开(公告)号：US09793184B2

    公开(公告)日：2017-10-17

    申请号：US15062828

    申请日：2016-03-07

    Applicant: Infineon Technologies AG

    Inventor： Andreas Riegler ,  Angelika Koprowski ,  Mathias Plappert ,  Frank Wolter

    IPC: H01L29/78 ,  H01L21/66 ,  H01L29/739 ,  H01L29/45 ,  H01L29/47

    CPC classification number: H01L22/30 ,  H01L22/20 ,  H01L29/456 ,  H01L29/47 ,  H01L29/7393 ,  H01L29/7801

    Abstract: A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type; a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type; a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition; a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition; first electrical transmission means, the first electrical transmission means being arranged and configured for providing a first sense signal derived from an electrical parameter of the first metal contact to a first signal input of a sense signal processing unit; and second electrical transmission means separated from said first electrical transmission means, the second electrical transmission means being arranged and configured for providing a second sense signal derived from an electrical parameter of the second metal contact to a second signal input of said sense signal processing unit.

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