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    DEVICES AND METHODS FOR HIGH-RESOLUTION IMAGE AND VIDEO CAPTURE
    5.
    发明申请
    DEVICES AND METHODS FOR HIGH-RESOLUTION IMAGE AND VIDEO CAPTURE 审中-公开
    高分辨率图像和视频捕获的设备和方法

    公开(公告)号：US20160301841A1

    公开(公告)日：2016-10-13

    申请号：US15181252

    申请日：2016-06-13

    Applicant: InVisage Technologies, Inc.

    Inventor： Michael R. Malone ,  Pierre Henri Rene Della Nave ,  Michael Charles Brading ,  Jess Jan Young Lee ,  Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

    IPC: H04N5/225 ,  H04N5/232 ,  H01L27/146 ,  H04N5/378

    Abstract: In various embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed-in portion of the first image projected on the first image sensor array.

    Abstract translation: 在各种实施例中，提供了一种成像系统和方法。 在一个实施例中，系统包括第一图像传感器阵列，第一光学系统，用于投影第一图像传感器阵列上的第一图像，第一光学系统具有第一缩放级别。 第二光学系统是在第二图像传感器阵列上投影第二图像，第二光学系统具有第二缩放水平。 第二图像传感器阵列和第二光学系统指向与第一图像传感器阵列和第一光学系统相同的方向。 第二缩放级别大于第一缩放级别，使得投影到第二图像传感器阵列上的第二图像是投影在第一图像传感器阵列上的第一图像的放大部分。

    MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES
    6.
    发明申请
    MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES 有权
    光电器件的材料，系统和方法

    公开(公告)号：US20160155882A1

    公开(公告)日：2016-06-02

    申请号：US14949767

    申请日：2015-11-23

    Applicant: InVisage Technologies, Inc.

    Inventor： Hui Tian ,  Edward Sargent

    IPC: H01L31/101

    CPC classification number: H01L31/1013 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14652 ,  H01L27/14687 ,  H01L27/14692 ,  H01L31/036

    Abstract: A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

    Abstract translation: 描述光电探测器以及相应的材料，系统和方法。 光电检测器包括集成电路和至少两个光敏层。 第一光敏层在集成电路的至少一部分之上，第二光敏层位于第一光敏层之上。 每个光敏层插在两个电极之间。 两个电极包括相应的第一电极和相应的第二电极。 集成电路选择性地向电极施加偏压并从光敏层读取信号。 该信号与相应的光敏层所接收的光子的数量有关。

    MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM
    7.
    发明申请
    MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM 有权
    材料，制造设备和方法，用于稳定，敏感的光电转换器和图像传感器

    公开(公告)号：US20150048300A1

    公开(公告)日：2015-02-19

    申请号：US14336783

    申请日：2014-07-21

    Applicant: InVisage Technologies, Inc.

    Inventor： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

    IPC: H01L31/0352 ,  H01L31/109 ,  H01L31/0336

    CPC classification number: H01L31/101 ,  H01L27/14603 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/035218 ,  H01L31/03845 ,  H01L31/09 ,  H01L31/109 ,  Y02E10/50

    Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

    Abstract translation: 光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。 光敏材料包括p型半导体，并且光敏材料具有功函数。 电路在第一触点和第二触点之间施加偏置电压。 当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。 第一次接触提供电子注入并阻止孔的提取。 第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。

    DARK CURRENT REDUCTION IN IMAGE SENSORS VIA DYNAMIC ELECTRICAL BIASING
    8.
    发明申请
    DARK CURRENT REDUCTION IN IMAGE SENSORS VIA DYNAMIC ELECTRICAL BIASING 有权
    图像传感器通过动态电气偏移降低电流

    公开(公告)号：US20140253769A1

    公开(公告)日：2014-09-11

    申请号：US14285247

    申请日：2014-05-22

    Applicant: InVisage Technologies, Inc.

    Inventor： Hui Tian ,  Pierre Henri Rene Della Nave

    IPC: H04N5/361 ,  H04N5/369

    CPC classification number: H04N5/378 ,  H04N5/2253 ,  H04N5/3575 ,  H04N5/361 ,  H04N5/363 ,  H04N5/3698 ,  H04N5/3745 ,  H04N5/3765 ,  H04N9/045 ,  H04N2209/047

    Abstract: In various embodiments, an image sensor and method of using an image sensor are described. In an example embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions with each pixel region comprising an optically sensitive material over the substrate and positioned to receive light. There is a bias electrode for each pixel region, with the bias electrode configured to provide a bias voltage to the optically sensitive material of the respective pixel region. Also included is a pixel circuit for each pixel region with each pixel circuit comprising a charge store formed on the semiconductor substrate and a read out circuit, the charge store being in electrical communication with the optically sensitive material of the respective pixel region. The pixel circuit is configured to reset the voltage on the charge store to a reset voltage during a reset period, to integrate charge from the optically sensitive material to the charge store during an integration period, and to read out a signal from the charge store during a read out period. The pixel circuit includes a reference voltage node to be coupled to the charge store during the reset period and the read out circuit during the read out period where a reference voltage is applied to the reference voltage node and is configured to be varied during the operation of the pixel circuit.

    Abstract translation: 在各种实施例中，描述了使用图像传感器的图像传感器和方法。 在示例性实施例中，图像传感器包括半导体衬底和多个像素区域，每个像素区域在衬底上包括光敏材料并被定位成接收光。 对于每个像素区域存在偏置电极，其中偏置电极被配置为向相应像素区域的光敏材料提供偏置电压。 还包括每个像素区域的像素电路，每个像素电路包括形成在半导体衬底上的电荷存储器和读出电路，电荷存储器与相应像素区域的光敏材料电连通。 像素电路被配置为在复位周期期间将电荷存储器上的电压复位为复位电压，以在积分期间将来自光敏材料的电荷集成到电荷存储器，并且在电荷存储期间读出来自电荷存储器的信号 读出期。 像素电路包括在复位周期期间耦合到电荷存储器的参考电压节点和在读出周期期间的读出电路，其中参考电压被施加到参考电压节点，并且被配置为在操作期间变化 像素电路。

    Image sensors employing sensitized semiconductor diodes
    9.
    发明授权
    Image sensors employing sensitized semiconductor diodes 有权

    公开(公告)号：US10535699B2

    公开(公告)日：2020-01-14

    申请号：US15939331

    申请日：2018-03-29

    Applicant: InVisage Technologies, Inc.

    Inventor： Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

    IPC: H01L27/146 ,  H04N9/04

    Abstract: An image sensor device includes a semiconductor substrate, including an array of pixel circuits, which define respective pixels of the device. A photosensitive layer is formed over the semiconductor substrate and configured to transfer charge to the pixel circuits in response to light incident on the photosensitive layer. An upper layer is formed over the photosensitive layer and is at least partially transparent to the light. Opaque partitions extend vertically through the upper layer in a checkerboard pattern aligned with the pixels in the array.

    Dark current reduction in image sensors via dynamic electrical biasing
    10.
    发明授权
    Dark current reduction in image sensors via dynamic electrical biasing 有权

    公开(公告)号：US10225504B2

    公开(公告)日：2019-03-05

    申请号：US15269659

    申请日：2016-09-19

    Applicant: InVisage Technologies, Inc.

    Inventor： Hui Tian ,  Pierre Henri Rene Della Nave

    IPC: H04N5/378 ,  H04N5/376 ,  H04N5/225 ,  H04N5/369 ,  H04N9/04 ,  H04N5/3745 ,  H04N5/361 ,  H04N5/357 ,  H04N5/363

    Abstract: Image sensors and methods of using image sensors are disclosed. In an embodiment, the image sensor includes pixel regions having optically sensitive material (OSM). A bias voltage is provided to the OSM via a bias electrode for each pixel region. A pixel circuit (PC) for each pixel region includes a read out circuit and a charge store (CS) coupled to the OSM of the respective pixel region. The PC resets voltage on the CS to a reset voltage during a reset period, integrates charge from the OSM to the CS during an integration period, and reads out a signal from the CS during a read out period. The PC includes a reference voltage node coupled to the CS during the reset period and the read out circuit during the read out period, a reference voltage is applied to the reference voltage node and is varied during operation of the PC.

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