公开(公告)号：US07554141B2

公开(公告)日：2009-06-30

申请号：US11392616

申请日：2006-03-30

Applicant: Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

Inventor： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC: H01L31/00 ,  H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14689 ,  H01L27/1463

Abstract: A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

Abstract translation: 一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及 包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置 在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置 的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸 层到第一P型半导体层的表面部分。

公开(公告)号：US07456889B2

公开(公告)日：2008-11-25

申请号：US11251825

申请日：2005-10-18

Applicant: Ikuko Inoue ,  Hiroshige Goto

Inventor： Ikuko Inoue ,  Hiroshige Goto

IPC: H04N3/14 ,  H04N5/335 ,  H01L27/00 ,  H01L31/062 ,  H01L31/113

CPC classification number: H04N5/335 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

Abstract: A solid-state imaging device has an imaging region in which unit cells, each of which includes a photoelectric conversion section and a signal scanning circuit section, are disposed on a semiconductor substrate in a two-dimensional manner. The signal scanning circuit section is composed of a plurality of transistors. At least part of a gate contact of each transistor in the signal scanning circuit section is formed on an active region of each transistor.

Abstract translation: 固态成像装置具有成像区域，其中包括光电转换部分和信号扫描电路部分的单元电池以二维方式设置在半导体衬底上。 信号扫描电路部分由多个晶体管构成。 信号扫描电路部分中的每个晶体管的栅极接触的至少一部分形成在每个晶体管的有源区上。

公开(公告)号：US20060219867A1

公开(公告)日：2006-10-05

申请号：US11392616

申请日：2006-03-30

Applicant: Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

Inventor： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC: H01L27/00 ,  H01L31/00

CPC classification number: H01L27/14689 ,  H01L27/1463

Abstract: A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

公开(公告)号：US06987537B2

公开(公告)日：2006-01-17

申请号：US09824774

申请日：2001-04-04

Applicant: Ikuko Inoue

Inventor： Ikuko Inoue

IPC: H04N5/335

CPC classification number: H04N5/335 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14692

Abstract: The image pickup system includes: MOS sensors arranged in an image pickup region of a semiconductor substrate in the form of a matrix and having photoelectric transfer layers; a peripheral circuit part formed in a region of the semiconductor substrate except for the image pickup region and having a driving circuit for driving the MOS sensors and a signal processing circuit for processing output signals from the MOS sensors; and microlenses, formed on the photoelectric transfer layers via a first insulating film, for condensing picture signals on the photoelectric transfer layers, wherein the driving circuit and the signal processing circuit in the peripheral circuit part are covered by a second insulating film, and the distance between the surface of the first insulating film and the semiconductor substrate is shorter than the distance between the surface of a second insulating film and the semiconductor substrate.

Abstract translation: 图像拾取系统包括：MOS传感器，布置在矩阵形式的半导体衬底的摄像区域中并具有光电转移层; 外围电路部分形成在除了摄像区域之外的半导体衬底的区域中并且具有用于驱动MOS传感器的驱动电路和用于处理来自MOS传感器的输出信号的信号处理电路; 和微透镜，其经由第一绝缘膜形成在光电转移层上，用于聚集光电转移层上的图像信号，其中外围电路部分中的驱动电路和信号处理电路被第二绝缘膜覆盖，并且距离 在第一绝缘膜的表面和半导体衬底之间的距离比第二绝缘膜的表面和半导体衬底之间的距离短。

公开(公告)号：US06271554B1

公开(公告)日：2001-08-07

申请号：US09110074

申请日：1998-07-02

Applicant: Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

Inventor： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

IPC: H01L27146

CPC classification number: H01L27/14643

Abstract: A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

Abstract translation: 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。

公开(公告)号：US5463232A

公开(公告)日：1995-10-31

申请号：US43632

申请日：1993-04-08

Applicant: Hirofumi Yamashita ,  Ikuko Inoue ,  Michio Sasaki ,  Ryohei Miyagawa

Inventor： Hirofumi Yamashita ,  Ikuko Inoue ,  Michio Sasaki ,  Ryohei Miyagawa

IPC: H01L27/14 ,  H01L27/148 ,  H01L29/10 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/359 ,  H04N5/361 ,  H04N5/367 ,  H04N5/369 ,  H04N5/3728 ,  H01L29/68 ,  H01L31/00

CPC classification number: H01L29/1062 ,  H01L27/14831

Abstract: A solid-state imaging device includes an array of photosensitive cells, each of which includes a photoelectric conversion section, which is arranged on the surface of a substrate and has a light-receiving opening. The photoelectric conversion section generates a packet of electrical carriers in response to the amount of incident light thereinto through the opening. A charge transfer section is arranged adjacent to the photoelectric conversion section on the substrate surface. This transfer section defines thereunder a transfer channel region that extends linearly in a predetermined direction in the substrate surface, and causes the carriers thus obtained to move sequentially. A light-shield section is arranged to cover the photoelectric conversion section except the opening, for preventing an incident light coming through the opening from being introduced into the transfer channel region as a leak component, by cutting off an internal reflection path of the leak component thereto.

Abstract translation: 固态成像装置包括光敏电池阵列，每个光敏单元包括光电转换部分，该光电转换部分布置在基板的表面上并具有光接收开口。 光电转换部分响应于通过该开口的入射光量而产生电载体的分组。 在基板表面上与光电转换部相邻配置电荷转移部。 该转印部分限定在基板表面中沿预定方向线性延伸的转移通道区域，并且使由此获得的载体依次移动。 遮光部被配置为将除了开口部之外的光电转换部覆盖，以防止通过开口的入射光作为泄漏部件被引入到传送通道区域，通过切断泄漏部件的内部反射路径 到此。

公开(公告)号：US08519499B2

公开(公告)日：2013-08-27

申请号：US12845194

申请日：2010-07-28

Applicant: Mariko Saito ,  Ikuko Inoue ,  Takeshi Yoshida

Inventor： Mariko Saito ,  Ikuko Inoue ,  Takeshi Yoshida

IPC: H01L29/00

CPC classification number: H01L27/1464 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14645

Abstract: According to one embodiment, a solid-state image sensor includes a semiconductor substrate including a first surface on which light enters, and a second surface opposite to the first surface, a pixel region formed in the semiconductor substrate, and including a photoelectric conversion element which converts the incident light into an electrical signal, a peripheral region formed in the semiconductor substrate, and including a circuit which controls an operation of the element in the pixel region, a plurality of interconnects which are formed in a plurality of interlayer insulating films stacked on the second surface, and are connected to the circuit, and a support substrate formed on the stacked interlayer insulating films and the interconnects. An uppermost one of the interconnects formed in an uppermost one of the interlayer insulating films is buried in a first trench formed in the uppermost interlayer insulating film.

Abstract translation: 根据一个实施例，固态图像传感器包括：半导体衬底，包括光入射的第一表面和与第一表面相对的第二表面;形成在半导体衬底中的像素区域，并且包括光电转换元件， 将入射光转换为电信号，形成在半导体衬底中的周边区域，并且包括控制像素区域中的元件的操作的电路;多个互连，其形成在堆叠在多个层间绝缘膜 第二表面，并且连接到电路，以及形成在层叠的层间绝缘膜和互连件上的支撑衬底。 形成在最上层的层间绝缘膜中的最上层的一个互连掩埋在最上层的层间绝缘膜中形成的第一沟槽中。

公开(公告)号：US20120252156A1

公开(公告)日：2012-10-04

申请号：US13490768

申请日：2012-06-07

Applicant: Mariko Saito ,  Ikuko Inoue

Inventor： Mariko Saito ,  Ikuko Inoue

IPC: H01L31/18

CPC classification number: H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L31/02002 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13024

Abstract: A solid-state imaging device includes an imaging element, an external terminal, an insulating film, a penetration electrode, a first insulating interlayer, a first electrode, and a first contact plug. The imaging element is formed on a first main surface of a semiconductor substrate. The external terminal is formed on a second main surface facing the first main surface of the substrate. The insulating film is formed in a through-hole formed in the substrate. The penetration electrode is formed on the insulating film in the through-hole and electrically connected to the external terminal. The first insulating interlayer is formed on the first main surface of the substrate and the penetration electrode. The first electrode is formed on the first insulating interlayer. The first contact plug is formed in the first insulating interlayer between the penetration electrode and the first electrode to electrically connect the penetration electrode and the first electrode.

Abstract translation: 固态成像装置包括成像元件，外部端子，绝缘膜，穿透电极，第一绝缘中间层，第一电极和第一接触插塞。 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在面向基板的第一主表面的第二主表面上。 绝缘膜形成在形成在基板中的通孔中。 穿透电极形成在通孔中的绝缘膜上并电连接到外部端子。 第一绝缘中间层形成在基板的第一主表面和穿透电极上。 第一电极形成在第一绝缘中间层上。 第一接触塞形成在穿透电极和第一电极之间的第一绝缘中间层中，以电连接穿透电极和第一电极。

公开(公告)号：US07915069B2

公开(公告)日：2011-03-29

申请号：US12752222

申请日：2010-04-01

Applicant: Ikuko Inoue

Inventor： Ikuko Inoue

IPC: H01L21/00

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14656 ,  H01L31/03529 ,  H01L51/5237

Abstract: An n/p semiconductor substrate is formed in such a manner that an n type semiconductor layer is deposited on a p+ semiconductor substrate. An imaging area including a plurality of n type semiconductor regions making photoelectric conversion and a plurality of p type semiconductor region for isolation formed around the n type semiconductor regions, is formed in the n/p semiconductor substrate. The n type semiconductor layer is divided into an upper layer and a lower layer. A second n type semiconductor region is formed to connect to the p+ type semiconductor substrate from a surface of the n/p semiconductor substrate in a peripheral region of the imaging area.

Abstract translation: 以n型半导体层沉积在p +半导体衬底上的方式形成n / p半导体衬底。 在n / p半导体衬底中形成包括形成光电转换的多个n型半导体区域和在n型半导体区域周围形成的用于隔离的多个p型半导体区域的成像区域。 n型半导体层分为上层和下层。 第二n型半导体区域形成为在成像区域的周边区域中从n / p半导体衬底的表面连接到p +型半导体衬底。

公开(公告)号：US20090283847A1

公开(公告)日：2009-11-19

申请号：US12508293

申请日：2009-07-23

Applicant: Atsuko KAWASAKI ,  Mie Matsuo ,  Ikuko Inoue ,  Masayuki Ayabe ,  Masahiro Sekiguchi ,  Kazumasa Tanida

Inventor： Atsuko KAWASAKI ,  Mie Matsuo ,  Ikuko Inoue ,  Masayuki Ayabe ,  Masahiro Sekiguchi ,  Kazumasa Tanida

IPC: H01L31/02

CPC classification number: H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L2224/02372 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H04N5/2257

Abstract: An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.

Abstract translation: 成像元件形成在半导体衬底的第一主表面上。 外部端子形成在半导体衬底的第二主表面上。 在形成在半导体衬底中的通孔中形成通孔电极。 第一电极焊盘形成在第一主表面中的通孔电极上。 在第一电极焊盘和第一主表面上形成层间绝缘膜。 在层间绝缘膜上形成第二电极焊盘。 在第二电极焊盘和层间绝缘膜上形成钝化膜，并且具有露出第二电极焊盘的一部分的开口。 当在垂直于半导体衬底的表面的方向观察时，在不与开口重叠的区域中，在第一和第二电极焊盘之间形成接触插塞。