公开(公告)号：US20250157813A1

公开(公告)日：2025-05-15

申请号：US18945187

申请日：2024-11-12

Applicant: IceMos Technology Limited

Inventor： Samuel J. Anderson ,  Takeshi Ishiguro ,  Cathal Duffy

IPC: H01L21/02 ,  H01L21/04 ,  H01L21/18 ,  H01L29/04 ,  H01L29/16 ,  H01L29/165

Abstract: A semiconductor device has a first substrate and a first semiconductor layer formed over the first substrate. A second substrate is disposed over a surface of the first semiconductor layer opposite the first substrate. The first semiconductor layer and second semiconductor layer can be silicon carbide or cubic silicon carbide. The first substrate and a portion of the first semiconductor layer are removed to reduce defects in the first semiconductor layer. A second semiconductor layer is formed over a remaining portion of the first semiconductor layer. A third semiconductor layer is disposed over the second semiconductor layer. The third semiconductor layer can be silicon. The third semiconductor layer can be disposed over the second semiconductor layer by direct wafer bonding. An electrical component is formed within the third semiconductor layer. The electrical component can be a power MOSFET, IGBT, CTIGBT, diode, and thyristor.

公开(公告)号：US12222316B2

公开(公告)日：2025-02-11

申请号：US17171691

申请日：2021-02-09

Applicant: IceMos Technology Limited

Inventor： Samuel J. Anderson ,  Hugh J. Griffin

IPC: G01N27/414 ,  G01N27/327 ,  G01N33/539

Abstract: An atomic level deposition for mass functionalization of a cavity filled with a pathogen sensitive antibody reagent to functionalize each biosensor using atomic level vapor phase deposition enables high volume production of this sensor technology. A biosensor has a first substrate and a second substrate with a cavity formed in the first substrate to form a membrane. Holes are formed through the second substrate. An aluminum oxide layer is formed over the cavity and into the holes to form cores. The cavity is filled with a pathogen sensitive antibody reagent. A biofluid sample with the pathogen is deposited over the membrane. The biofluid is drawn through the cores to mix with the antibody reagent. The antibodies combine with the pathogen to change the impedance along the current path. The presence of the pathogen changes the ionic current flow through the biosensor for a positive detection of the pathogen.

公开(公告)号：US20220236214A1

公开(公告)日：2022-07-28

申请号：US17171691

申请日：2021-02-09

Applicant: IceMos Technology Limited

Inventor： Samuel J. Anderson ,  Hugh J. Griffin

IPC: G01N27/414 ,  G01N27/327 ,  G01N33/539

Abstract: An atomic level deposition for mass functionalization of a cavity filled with a pathogen sensitive antibody reagent to functionalize each biosensor using atomic level vapor phase deposition enables high volume production of this sensor technology. A biosensor has a first substrate and a second substrate with a cavity formed in the first substrate to form a membrane. Holes are formed through the second substrate. An aluminum oxide layer is formed over the cavity and into the holes to form cores. The cavity is filled with a pathogen sensitive antibody reagent. A biofluid sample with the pathogen is deposited over the membrane. The biofluid is drawn through the cores to mix with the antibody reagent. The antibodies combine with the pathogen to change the impedance along the current path. The presence of the pathogen changes the ionic current flow through the biosensor for a positive detection of the pathogen.

公开(公告)号：US20240405067A1

公开(公告)日：2024-12-05

申请号：US18622987

申请日：2024-03-31

Applicant: IceMos Technology Limited

Inventor： Samuel J. Anderson ,  Takeshi Ishiguro

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/225 ,  H01L21/268 ,  H01L21/3065 ,  H01L29/66 ,  H01L29/78 ,  H02M3/335

Abstract: A semiconductor device has a substrate and semiconductor layer formed over the substrate. The semiconductor layer has a first conductivity type. A trench is formed through the semiconductor layer. A semiconductor material having a second conductivity type is deposited over a side surface of the trench by vapor phase deposition or plasma doping. The semiconductor material is diffused into the semiconductor layer to form a first column of semiconductor material having the second conductivity type within the semiconductor layer. A first insulating layer is formed over the side surface of the trench. A body region is formed within the semiconductor layer. A source region is formed within the body region. A gate region is formed within the body region. A second insulating layer is formed over the trench. A third insulating layer is formed over the second insulating layer. A conductive layer is formed over the third insulating layer.

公开(公告)号：US20230207568A1

公开(公告)日：2023-06-29

申请号：US18069815

申请日：2022-12-21

Applicant: IceMos Technology Limited

Inventor： Takeshi Ishiguro ,  Samuel J. Anderson ,  Aymeric Privat

IPC: H01L27/12 ,  H01L21/84

CPC classification number: H01L27/1207 ,  H01L21/84

Abstract: A power transistor has a plurality of cells, each cell having a notch formed in a substrate. An insulating material, such as an oxide, is formed within the notch. A semiconductor layer is formed over the substrate and insulating material. The semiconductor layer has a first type of semiconductor material and a second type of semiconductor material opposite the first type of semiconductor material to form the power transistor. A width of the insulating material within the notch is less than a width of the semiconductor layer so that a portion of the substrate extends to the semiconductor layer. The notch can have a slope or a step. The insulating material has a first thickness and a second thickness greater than the first thickness within the notch. The insulating material may extend completely across the interface between substrate and semiconductor layer, or only partially across the interface.

公开(公告)号：US20230065348A1

公开(公告)日：2023-03-02

申请号：US17822384

申请日：2022-08-25

Applicant: IceMos Technology Limited

Inventor： Samuel J. Anderson ,  Takeshi Ishiguro ,  Cathal Duffy ,  Aymeric Privat

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/10

Abstract: A semiconductor device has a substrate made of a first semiconductor material. The first semiconductor material is silicon carbide. A first semiconductor layer made of the first semiconductor material is disposed over the substrate. A second semiconductor layer made of a second semiconductor material dissimilar from the first semiconductor material is disposed over the first semiconductor layer. The second semiconductor material is silicon. A third semiconductor layer made of the second semiconductor material can be disposed between the first semiconductor layer and second semiconductor layer. A semiconductor device is formed in the second semiconductor layer. The semiconductor device can be a power MOSFET or diode. The second semiconductor layer with the electrical component provides a first portion of a breakdown voltage for the semiconductor device and the first semiconductor layer and substrate provide a second portion of the breakdown voltage for the semiconductor device.

公开(公告)号：US20230061775A1

公开(公告)日：2023-03-02

申请号：US17822395

申请日：2022-08-25

Applicant: IceMos Technology Limited

Inventor： Samuel J. Anderson ,  Takeshi Ishiguro ,  Cathal Duffy ,  Aymeric Privat

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/04

Abstract: A semiconductor device has a substrate made of a first semiconductor material. The first semiconductor material is silicon carbide. A first semiconductor layer made of the first semiconductor material is disposed over the substrate. A second semiconductor layer made of a second semiconductor material dissimilar from the first semiconductor material is disposed over the first semiconductor layer. The second semiconductor material is silicon. A third semiconductor layer made of the second semiconductor material can be disposed between the first semiconductor layer and second semiconductor layer. A semiconductor device or electrical component is formed in the second semiconductor layer. The electrical component can be a power MOSFET. A first insulating layer, such as an oxide layer, is formed over the electrical component, and second insulating layer, such as a nitride layer, is formed over the first insulating layer for protection against radiation.

公开(公告)号：US11545565B2

公开(公告)日：2023-01-03

申请号：US17075753

申请日：2020-10-21

Applicant: IceMos Technology Limited

Inventor： Samuel J. Anderson

IPC: H01L21/00 ,  H01L29/76 ,  H01L29/16 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device has a substrate and graphene with semiconducting properties or diamond region formed on the substrate. The graphene with semiconducting properties or diamond region is formed on or within the substrate using liquid-phase-epitaxy growth of graphene enabled by a catalytic alloy of Ni and Cu. The substrate can be silicon, silicon carbide, gallium arsenide, gallium nitride, germanium, or indium phosphide. A semiconductor component is formed over the graphene with semiconducting properties or diamond region and substrate. The semiconductor component can be a power MOSFET, IGBT, or CTIGBT with a gate structure formed over the substrate, source region adjacent to the gate structure, and drain region adjacent to the gate structure opposite the source region. The graphene with semiconducting properties or diamond region is formed under a gate of the MOSFET to reduce drain to source resistance, as well as providing radiation hardening for the device.

公开(公告)号：US20220236261A1

公开(公告)日：2022-07-28

申请号：US17158609

申请日：2021-01-26

Applicant: IceMos Technology Limited

Inventor： Samuel J. Anderson ,  Hugh J. Griffin

IPC: G01N33/543 ,  G01N33/569 ,  G01N27/12 ,  G01N27/327 ,  C23C16/04

Abstract: An atomic level deposition for mass functionalization of a cavity filled with a pathogen sensitive antibody reagent to functionalize each Biosensor using atomic level vapor phase deposition enables high volume production of this sensor technology. A biosensor has a first substrate and a second substrate with a cavity formed in the first substrate to form a membrane. Holes is formed through the second substrate. An aluminum oxide layer is formed over the cavity and into the holes to form cores. The cavity is filled with a pathogen sensitive antibody reagent. A biofluid sample with the pathogen is deposited over the membrane. The biofluid is drawn through the cores to mix with the antibody reagent. The antibodies combine with the pathogen to change the impedance along the current path. The presence of the pathogen changes the ionic current flow through the biosensor for a positive detection of the pathogen.

公开(公告)号：US20240405068A1

公开(公告)日：2024-12-05

申请号：US18622990

申请日：2024-03-31

Applicant: IceMos Technology Limited

Inventor： Samuel J. Anderson ,  Takeshi Ishiguro

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/225 ,  H01L21/268 ,  H01L21/3065 ,  H01L29/66 ,  H01L29/78 ,  H02M3/335

Abstract: A semiconductor device has a substrate and semiconductor layer formed over the substrate. The semiconductor layer has a first conductivity type. A trench is formed through the semiconductor layer. An epitaxial layer having a second conductivity type is formed over a surface of the semiconductor layer and a side surface of the trench. The epitaxial layer is diffused into the semiconductor layer to form a first column of semiconductor material having the second conductivity type within the semiconductor layer. A first insulating layer is formed over the side surface of the trench. A body region is formed within the semiconductor layer. A source region is formed within the body region. A gate region is formed within the body region. A second insulating layer is formed over the trench. A third insulating layer is formed over the second insulating layer. A conductive layer is formed over the third insulating layer.