公开(公告)号：US10580871B2

公开(公告)日：2020-03-03

申请号：US15918814

申请日：2018-03-12

Applicant: IQE, plc

Inventor： Oleg Laboutin ,  Chen-Kai Kao ,  Chien-Fong Lo ,  Wayne Johnson ,  Hugues Marchand

IPC: H01L27/146 ,  H01L29/20 ,  H01L21/02 ,  H01L29/205 ,  H01L29/207 ,  H01L29/36 ,  H01L29/66 ,  H01L29/778

Abstract: Nucleation layers for growth of III-nitride structures, and methods for growing the nucleation layers, are described herein. A semiconductor can include a silicon substrate and a nucleation layer over the silicon substrate. The nucleation layer can include silicon and deep-level dopants. The semiconductor can include a III-nitride layer formed over the nucleation layer. At least one of the silicon substrate and the nucleation layer can include ionized contaminants. In addition, a concentration of the deep-level dopants is at least as high as a concentration of the ionized contaminants.

公开(公告)号：US20180069085A1

公开(公告)日：2018-03-08

申请号：US15256170

申请日：2016-09-02

Applicant: IQE, PLC

Inventor： Oleg Laboutin ,  Chen-Kai Kao ,  Chien-Fong Lo ,  Wayne Johnson ,  Hugues Marchand

IPC: H01L29/20 ,  H01L29/207 ,  H01L29/36 ,  H01L21/02 ,  H01L29/778 ,  H01L29/66 ,  H01L29/205

CPC classification number: H01L29/2003 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/205 ,  H01L29/207 ,  H01L29/36 ,  H01L29/66462 ,  H01L29/7787

Abstract: Nucleation layers for growth of III-nitride structures, and methods for growing the nucleation layers, are described herein. A semiconductor can include a silicon substrate and a nucleation layer over the silicon substrate. The nucleation layer can include silicon and deep-level dopants. The semiconductor can include a III-nitride layer formed over the nucleation layer. At least one of the silicon substrate and the nucleation layer can include ionized contaminants. In addition, a concentration of the deep-level dopants is at least as high as a concentration of the ionized contaminants.

公开(公告)号：US09917156B1

公开(公告)日：2018-03-13

申请号：US15256170

申请日：2016-09-02

Applicant: IQE, PLC

Inventor： Oleg Laboutin ,  Chen-Kai Kao ,  Chien-Fong Lo ,  Wayne Johnson ,  Hugues Marchand

IPC: H01L31/072 ,  H01L29/66 ,  H01L29/778 ,  H01L29/20 ,  H01L29/207 ,  H01L29/36 ,  H01L21/02 ,  H01L29/205

CPC classification number: H01L29/2003 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/205 ,  H01L29/207 ,  H01L29/36 ,  H01L29/66462 ,  H01L29/7787

Abstract: Nucleation layers for growth of III-nitride structures, and methods for growing the nucleation layers, are described herein. A semiconductor can include a silicon substrate and a nucleation layer over the silicon substrate. The nucleation layer can include silicon and deep-level dopants. The semiconductor can include a III-nitride layer formed over the nucleation layer. At least one of the silicon substrate and the nucleation layer can include ionized contaminants. In addition, a concentration of the deep-level dopants is at least as high as a concentration of the ionized contaminants.