公开(公告)号：US10134913B2

公开(公告)日：2018-11-20

申请号：US15133930

申请日：2016-04-20

Applicant: INCHEON UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION

Inventor： Sung-Hun Jin

IPC: H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: Disclosed is a method of manufacturing an a-IGZO TFT-based transient semiconductor. The method includes (a) stacking a thermal oxide layer on a silicon substrate and depositing a nickel thin layer; (b) forming a PECVD layer on the nickel thin layer; (c) patterning the PECVD layer after setting a gate area and depositing a metallic layer; (d) lifting off the metallic layer to form a gage metallic thin layer and depositing a gage insulating layer on the gate metallic thin layer; (e) depositing an a-IGZO layer on the gate insulating layer; (f) etching an active area and the gate insulating layer; (g) forming a source electrode and a drain electrode and attaching a thermal release tape on the source electrode and the drain electrode; (h) delaminating the nickel thin layer; (i) performing transcription on a polyvinyl alcohol thin layer after etching the nickel thin layer; and (j) detaching the tape.

公开(公告)号：US09564319B2

公开(公告)日：2017-02-07

申请号：US15152121

申请日：2016-05-11

Applicant: INCHEON UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION

Inventor： Sung-Hun Jin

IPC: H01L29/76 ,  H01L21/02 ,  H01L29/775 ,  H01L29/778 ,  H01L21/683 ,  H01L21/3205 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3065 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L21/02606 ,  H01L21/02422 ,  H01L21/02664 ,  H01L21/3105 ,  H01L21/6835 ,  H01L21/6836 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/66477 ,  H01L29/775 ,  H01L29/7789 ,  H01L51/0015 ,  H01L51/0048 ,  H01L51/0558 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68381

Abstract: A method of fabricating a transient semiconductor based on a single-wall nanotube includes stacking a thermal oxide layer on a silicon substrate and depositing a nickel thin layer on the thermal oxide layer, depositing an oxide layer on the nickel thin layer, depositing a metallic layer on the oxide layer, and patterning the metallic layer to form a gate electrode, depositing a gate insulating layer on the gate electrode, changing a surface of the gate insulating layer into a hydrophilic surface, and washing and drying the gate insulting layer, coating a single-wall nanotube on the hydrophilic surface of the gate insulating layer, forming source and drain electrodes by forming a contact opening with respect to the gate insulating layer, attaching a thermal release tape after removing a surrounding single-wall nanotube, performing a transfer onto a polyvinyl alcohol thin layer after etching the nickel thin layer, and releasing the thermal release.

Abstract translation: 制造基于单壁纳米管的瞬态半导体的方法包括在硅衬底上堆叠热氧化物层并在热氧化物层上沉积镍薄层，在镍薄层上沉积氧化物层，沉积金属层 在氧化物层上形成金属层以形成栅电极，在栅电极上沉积栅极绝缘层，将栅极绝缘层的表面改变为亲水表面，以及洗涤和干燥栅极绝缘层，涂覆 在栅极绝缘层的亲水表面上形成单壁纳米管，通过相对于栅极绝缘层形成接触开口形成源极和漏极，在除去周围的单壁纳米管之后附加热释放带，进行转移到 在蚀刻镍薄层之后的聚乙烯醇薄层，并释放热释放。