Ultrasound transducer and a system

    公开(公告)号:US12279911B2

    公开(公告)日:2025-04-22

    申请号:US18042243

    申请日:2021-07-01

    Applicant: IMEC VZW

    Abstract: This patent disclosure relates to an ultrasound transducer including an array of ultrasound transducing elements, a plurality of transducer drive lines. The ultrasound transducer further includes an array of control circuits, wherein each individual control circuit includes a drive switch and a memory element, the drive switch comprising at least one thin-film transistor, the memory element being configured to store and control the state of the drive switch. The ultrasound transducer further configured so each individual ultrasound transducing element of the array of ultrasound transducing elements has one associated control circuit of the array of control circuits and one associated transducer drive line of the plurality of transducer drive lines, and wherein the ultrasound transducer is configured to, for each individual ultrasound transducing element, drive the individual ultrasound transducing element by the associated transducer drive line when the drive switch of the associated control circuit is in the on-state.

    Low Power Logic Circuit
    3.
    发明申请

    公开(公告)号:US20200007130A1

    公开(公告)日:2020-01-02

    申请号:US16450046

    申请日:2019-06-24

    Applicant: IMEC VZW

    Inventor: Kris Myny

    Abstract: The disclosure relates to a logic circuit. The logic circuit comprises a first thin film transistor, TFT, having a gate connected to an input of the logic circuit, and a drain connected to an output of the logic circuit. The logic circuit further comprises a second TFT having a source connected to the output of the logic circuit. The logic circuit further comprises a third TFT having a gate connected to the input of the logic circuit, a source connected to the source of the second TFT, and a drain connected to a gate of the second TFT. The logic circuit further comprises a fourth TFT having a gate connected to the output of the logic circuit, and a source connected to the gate of the second TFT and the drain of the third TFT.

    Method of generating ultrasound and ultrasound generator

    公开(公告)号:US11799563B2

    公开(公告)日:2023-10-24

    申请号:US17209548

    申请日:2021-03-23

    CPC classification number: H04B11/00

    Abstract: A method of generating ultrasound by driving an array of ultrasonic transducers comprises a charge transfer procedure. The charge transfer procedure comprises switching a terminal of a first ultrasonic transducer of the array, at a first electric potential, to a charge distribution bus; switching a terminal of a second ultrasonic transducer of the array, at a second electric potential different than the first potential, to the charge distribution bus; and allowing charge to flow between the first ultrasonic transducer and the second ultrasonic transducer through the charge distribution bus.

    System for Sensing of a Parameter of a Living Being and an Electronic Unit for Use in a System

    公开(公告)号:US20190175018A1

    公开(公告)日:2019-06-13

    申请号:US16211105

    申请日:2018-12-05

    Abstract: A system for sensing a parameter of a living being may comprise a thin film transistor (TFT) unit being configured for attachment to a body part of the living being. The TFT unit may comprise at least one sensor with associated sensor circuitry for sensing the parameter of the living being. The system may further comprise an electronic unit, wherein the electronic unit and the TFT unit are configured for (i) detachably physically connecting the electronic unit to the TFT unit or (ii) arranging the electronic unit on the body part in physical contact with the TFT unit, and wherein the TFT unit and the electronic unit interface over a wireless contact for powering the TFT unit by the electronic unit and for communicating sensing results from the TFT unit to the electronic unit.

    Ultrasound Transducer and a System
    6.
    发明公开

    公开(公告)号:US20230309966A1

    公开(公告)日:2023-10-05

    申请号:US18042243

    申请日:2021-07-01

    Applicant: IMEC VZW

    CPC classification number: A61B8/4494 A61B8/4488 A61B8/4281

    Abstract: This patent disclosure relates to an ultrasound transducer including an array of ultrasound transducing elements, a plurality of transducer drive lines. The ultrasound transducer further includes an array of control circuits, wherein each individual control circuit includes a drive switch and a memory element, the drive switch comprising at least one thin-film transistor, the memory element being configured to store and control the state of the drive switch. The ultrasound transducer further configured so each individual ultrasound transducing element of the array of ultrasound transducing elements has one associated control circuit of the array of control circuits and one associated transducer drive line of the plurality of transducer drive lines, and wherein the ultrasound transducer is configured to, for each individual ultrasound transducing element, drive the individual ultrasound transducing element by the associated transducer drive line when the drive switch of the associated control circuit is in the on-state.

    Active Thin-Film Charge Sensor Element

    公开(公告)号:US20220349749A1

    公开(公告)日:2022-11-03

    申请号:US17723970

    申请日:2022-04-19

    Abstract: A charge sensor element includes a charge collecting detector configured to generate an intensity signal indicative of an amount of charge at an internal charge sensor element node, an amplifier transistor that is electrically connected to the internal charge sensor element node and configured to amplify the intensity signal, and a reset transistor that is electrically connected to the internal charge sensor element node and configured to reset the intensity signal. The amplifier transistor or the reset transistor includes a front gate and a back gate that are configured to control the amplifier transistor or the reset transistor.

    Pixel Circuit
    8.
    发明申请

    公开(公告)号:US20220201821A1

    公开(公告)日:2022-06-23

    申请号:US17546718

    申请日:2021-12-09

    Abstract: A pixel circuit for driving a light-emitting diode (LED) comprises a current-mirror, comprising a primary current path and a secondary current path, arranged to mirror a current through the primary current path to the secondary current path. The current through the primary current path is settable by switching a reference current into the primary current path through a reference current line. The secondary current path is configured to drive the LED. The pixel circuit also includes a switch component arranged to switch the LED to and from the secondary current path based on one or more switch control lines.

    COMPENSATED CURRENT MIRROR CIRCUIT

    公开(公告)号:US20220199002A1

    公开(公告)日:2022-06-23

    申请号:US17554929

    申请日:2021-12-17

    Abstract: A compensated current mirror circuit comprises a current mirror with a primary current path and a secondary current path, configured to mirror a current through the primary current path to the secondary current path. The current is settable by switching a reference current through a reference current line into the primary current path. A primary current mirror transistor is connected in series with the primary current path. A secondary current mirror transistor is connected in series with the secondary current path. A gate of the primary current mirror transistor is connected to a gate of the secondary current mirror transistor at a current mirror node. A compensation block is connected to a back gate of the secondary current mirror transistor and to one or more compensation control lines, and is configured to apply a compensation signal at the back gate based on the compensation control lines.

    Monolithically integrated antenna devices

    公开(公告)号:US11271283B2

    公开(公告)日:2022-03-08

    申请号:US16766994

    申请日:2018-12-21

    Applicant: IMEC VZW

    Abstract: Example embodiments relate to monolithically integrated antenna devices. One embodiment includes a monolithically integrated antenna device that includes a substrate having a first surface and a second surface. The monolithically integrated antenna device also includes a transistor component layer that includes at least one electronic component therein. Further, the monolithically integrated antenna device includes at least one antenna structure formed on the substrate or the transistor component layer. The antenna structure is configured to operate in a frequency range of between 30 kHz and 2.4 GHz. The substrate is configured to have a size that is the same or larger than the at least one antenna structure. The at least one antenna structure is formed in a stack with the transistor component layer and the substrate. The monolithically integrated antenna device is configured to shield the at least one electronic component in the transistor component layer from electromagnetic interference.

Patent Agency Ranking