公开(公告)号：US20050233553A1

公开(公告)日：2005-10-20

申请号：US11097445

申请日：2005-04-04

Applicant: Michael Kountz ,  George Engle ,  Steven Evers

Inventor： Michael Kountz ,  George Engle ,  Steven Evers

IPC: C23C16/24 ,  C23C16/34 ,  H01L21/205 ,  H01L21/365

CPC classification number: C23C16/345 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

Abstract: A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N2, is activated or ionized in a reactor before it is deposited on the substrate.

Abstract translation: 制造半导体的方法使用化学气相沉积或等离子体增强化学气相沉积法将非晶硅膜沉积在诸如ASIC晶片的衬底的暴露表面上。 非晶硅膜掺杂氮气以降低膜的导电性和/或增加膜的击穿电压。 在将反应器沉积在基材上之前，将氮气N 2 N 2在反应器中活化或离子化。

公开(公告)号：US20050178329A1

公开(公告)日：2005-08-18

申请号：US11059981

申请日：2005-02-17

Applicant: George Engle

Inventor： George Engle

IPC: C23C14/00 ,  C23C14/06 ,  C23C14/32 ,  C23C14/34 ,  C23C16/00 ,  C23C16/448 ,  C23C16/50 ,  C25B11/00 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/0623 ,  C23C14/34 ,  C23C14/3464 ,  C23C16/4485 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/34

Abstract: A deposition system includes a vacuum reaction chamber with a substrate holder positioned in it. The substrate holder is for carrying a substrate therein. A sputtering apparatus is also positioned in the vacuum reaction chamber. The sputtering apparatus is configured to direct sputtered material towards the substrate to form a sputtered material region thereon. A plasma enhanced chemical vapor deposition (PECVD) apparatus is positioned in the vacuum reaction chamber. The PECVD apparatus is configured to deposit a PECVD material region thereon the substrate. The first PECVD apparatus includes a first PECVD electrode movable from a first position towards the substrate and a second position away from the substrate.

Abstract translation: 沉积系统包括具有定位在其中的基板保持架的真空反应室。 衬底保持器用于在其中承载衬底。 溅射装置也位于真空反应室中。 溅射装置被配置为将溅射的材料引向衬底以在其上形成溅射材料区域。 等离子体增强化学气相沉积（PECVD）装置位于真空反应室中。 PECVD装置被配置为在其上沉积PECVD材料区域。 第一PECVD装置包括可从第一位置朝向衬底移动的第一PECVD电极和远离衬底的第二位置。

公开(公告)号：US20120216874A1

公开(公告)日：2012-08-30

申请号：US13466726

申请日：2012-05-08

Applicant: George Engle

Inventor： George Engle

IPC: F16L53/00

CPC classification number: C23C16/4485 ,  Y10T137/0318 ,  Y10T137/6416

Abstract: A method and system for delivering iodine gas is presented. The pure iodine gas flow can be at a controlled, known flow rate, and furthermore be held at a positive pressure in relation to a process chamber. In an exemplary embodiment, pure iodine gas is transported without the use of an inert carrier gas. This is facilitated in part by maintaining the iodine gas chamber at a higher pressure than the processing chamber. In one exemplary embodiment, an iodine vessel receives solid iodine supplied by an iodine fill source and is heated to produce pure iodine gas. In addition, a control system monitors and controls the operating conditions in the iodine vessel and maintains a positive pressure in the iodine vessel. The iodine delivery system may include a valve system configured to control the flow of iodine gas through the iodine delivery system and into a process chamber.

Abstract translation: 提出了一种用于输送碘气的方法和系统。 纯碘气流可以是受控的已知流速，并且进一步相对于处理室保持在正压力。 在一个示例性实施方案中，纯碘气被输送而不使用惰性载气。 这部分地通过将碘气室保持在比处理室更高的压力来促进。 在一个示例性实施方案中，碘容器接收由碘填充源供应的固体碘，并加热以产生纯碘气体。 此外，控制系统监测和控制碘容器中的操作条件并在碘容器中保持正压。 碘输送系统可以包括阀系统，该阀系统被配置为控制通过碘输送系统的碘气流并进入处理室。

公开(公告)号：US20120164412A1

公开(公告)日：2012-06-28

申请号：US13367467

申请日：2012-02-07

Applicant: George Engle

Inventor： George Engle

IPC: B32B7/02 ,  C23C14/34

CPC classification number: C23C14/0623 ,  C23C14/34 ,  C23C14/3464 ,  C23C16/02 ,  C23C16/4485 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/34 ,  Y10T428/24942

Abstract: The present application discloses a method and system of depositing a lead selenide film onto another material. The lead selenide film may used in a photoconductive application or a photovoltaic application. Furthermore, the applications may be responsive to infrared radiation at ambient temperature. In one embodiment, a method includes sputtering the lead selenide film, performing a sensitization process, and applying a passivation film. In one exemplary embodiment, a p-n junction is formed by directly adhering a lead selenide film to a silicon substrate.

Abstract translation: 本申请公开了将硒化铅膜沉积到另一种材料上的方法和系统。 硒化铅膜可用于光电导应用或光伏应用。 此外，应用可以响应于环境温度下的红外辐射。 在一个实施方案中，一种方法包括溅射硒化铅膜，进行敏化过程和施加钝化膜。 在一个示例性实施例中，通过将硒化铅膜直接粘附到硅衬底来形成p-n结。

公开(公告)号：US08195039B2

公开(公告)日：2012-06-05

申请号：US12334039

申请日：2008-12-12

Applicant: George Engle

Inventor： George Engle

IPC: A01G13/06

CPC classification number: C23C16/4485 ,  Y10T137/0318 ,  Y10T137/6416

Abstract: A method and system for delivering iodine gas is presented. The pure iodine gas flow can be at a controlled, known flow rate, and furthermore be held at a positive pressure in relation to a process chamber. In an exemplary embodiment, pure iodine gas is transported without the use of an inert carrier gas. This is facilitated in part by maintaining the iodine gas chamber at a higher pressure than the processing chamber.In one exemplary embodiment, an iodine vessel receives solid iodine supplied by an iodine fill source and is heated to produce pure iodine gas. In addition, a control system monitors and controls the operating conditions in the iodine vessel and maintains a positive pressure in the iodine vessel. The iodine delivery system may include a valve system configured to control the flow of iodine gas through the iodine delivery system and into a process chamber.

Abstract translation: 提出了一种用于输送碘气的方法和系统。 纯碘气流可以是受控的已知流速，并且进一步相对于处理室保持在正压力。 在一个示例性实施方案中，纯碘气被输送而不使用惰性载气。 这部分地通过将碘气室保持在比处理室更高的压力来促进。 在一个示例性实施方案中，碘容器接收由碘填充源供应的固体碘，并加热以产生纯碘气体。 此外，控制系统监测和控制碘容器中的操作条件并在碘容器中保持正压。 碘输送系统可以包括阀系统，该阀系统被配置为控制通过碘输送系统的碘气流并进入处理室。

公开(公告)号：US07638413B2

公开(公告)日：2009-12-29

申请号：US11097445

申请日：2005-04-04

Applicant: Michael Kountz ,  George Engle ,  Steven Evers

Inventor： Michael Kountz ,  George Engle ,  Steven Evers

IPC: H01L21/20

CPC classification number: C23C16/345 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

Abstract: A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N2, is activated or ionized in a reactor before it is deposited on the substrate.

Abstract translation: 制造半导体的方法使用化学气相沉积或等离子体增强化学气相沉积法将非晶硅膜沉积在诸如ASIC晶片的衬底的暴露表面上。 非晶硅膜掺杂氮气以降低膜的导电性和/或增加膜的击穿电压。 在沉积在基底上之前，氮气，N2在反应器中被活化或离子化。

公开(公告)号：US08133364B2

公开(公告)日：2012-03-13

申请号：US12266372

申请日：2008-11-06

Applicant: George Engle

Inventor： George Engle

IPC: C23C14/32

CPC classification number: C23C14/0623 ,  C23C14/34 ,  C23C14/3464 ,  C23C16/02 ,  C23C16/4485 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/34 ,  Y10T428/24942

Abstract: The present application discloses a method and system of depositing a lead selenide film onto another material. The lead selenide film may used in a photoconductive application or a photovoltaic application. Furthermore, the applications may be responsive to infrared radiation at ambient temperature. In one embodiment, a method includes sputtering the lead selenide film, performing a sensitization process, and applying a passivation film. In one exemplary embodiment, a p-n junction is formed by directly adhering a lead selenide film to a silicon substrate.

Abstract translation: 本申请公开了将硒化铅膜沉积到另一种材料上的方法和系统。 硒化铅膜可用于光电导应用或光伏应用。 此外，应用可以响应于环境温度下的红外辐射。 在一个实施方案中，一种方法包括溅射硒化铅膜，进行敏化过程和施加钝化膜。 在一个示例性实施例中，通过将硒化铅膜直接粘附到硅衬底来形成p-n结。

公开(公告)号：US20090154908A1

公开(公告)日：2009-06-18

申请号：US12334039

申请日：2008-12-12

Applicant: George Engle

Inventor： George Engle

IPC: C23C16/448

CPC classification number: C23C16/4485 ,  Y10T137/0318 ,  Y10T137/6416

Abstract: A method and system for delivering iodine gas is presented. The pure iodine gas flow can be at a controlled, known flow rate, and furthermore be held at a positive pressure in relation to a process chamber. In an exemplary embodiment, pure iodine gas is transported without the use of an inert carrier gas. This is facilitated in part by maintaining the iodine gas chamber at a higher pressure than the processing chamber.In one exemplary embodiment, an iodine vessel receives solid iodine supplied by an iodine fill source and is heated to produce pure iodine gas. In addition, a control system monitors and controls the operating conditions in the iodine vessel and maintains a positive pressure in the iodine vessel. The iodine delivery system may include a valve system configured to control the flow of iodine gas through the iodine delivery system and into a process chamber.

Abstract translation: 提出了一种用于输送碘气的方法和系统。 纯碘气流可以是受控的已知流速，并且进一步相对于处理室保持在正压力。 在一个示例性实施方案中，纯碘气被输送而不使用惰性载气。 这部分地通过将碘气室保持在比处理室更高的压力来促进。 在一个示例性实施方案中，碘容器接收由碘填充源供应的固体碘，并加热以产生纯碘气体。 此外，控制系统监测和控制碘容器中的操作条件并在碘容器中保持正压。 碘输送系统可以包括阀系统，该阀系统被配置为控制通过碘输送系统的碘气流并进入处理室。

公开(公告)号：US20090120501A1

公开(公告)日：2009-05-14

申请号：US12266372

申请日：2008-11-06

Applicant: George Engle

Inventor： George Engle

IPC: H01L31/04 ,  H01L21/20 ,  C23C14/34

CPC classification number: C23C14/0623 ,  C23C14/34 ,  C23C14/3464 ,  C23C16/02 ,  C23C16/4485 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/34 ,  Y10T428/24942

Abstract: The present application discloses a method and system of depositing a lead selenide film onto another material. The lead selenide film may used in a photoconductive application or a photovoltaic application. Furthermore, the applications may be responsive to infrared radiation at ambient temperature. In one embodiment, a method includes sputtering the lead selenide film, performing a sensitization process, and applying a passivation film. In one exemplary embodiment, a p-n junction is formed by directly adhering a lead selenide film to a silicon substrate.

Abstract translation: 本申请公开了将硒化铅膜沉积到另一种材料上的方法和系统。 硒化铅膜可用于光电导应用或光伏应用。 此外，应用可以响应于环境温度下的红外辐射。 在一个实施方案中，一种方法包括溅射硒化铅膜，进行敏化过程和施加钝化膜。 在一个示例性实施例中，通过将硒化铅膜直接粘附到硅衬底来形成p-n结。

公开(公告)号：US20070173732A1

公开(公告)日：2007-07-26

申请号：US10587806

申请日：2005-01-28

Applicant: Elvir Causevic ,  George Engle

Inventor： Elvir Causevic ,  George Engle

IPC: A61B5/04

CPC classification number: A61B5/0476 ,  A61B5/0031 ,  A61B2503/40

Abstract: An implantable logic circuit configured to receive analog bioelectric signals from one or more implanted electrodes, perform amplification, A/D conversion of the received analog bioelectric signals, signal sampling, and to communicate the signals to a remote processing system over a wireless communications link. Power for the implantable logic circuit is derived from an external source over a wireless link.

Abstract translation: 被配置为从一个或多个注入电极接收模拟生物电信号的可植入逻辑电路，执行所接收的模拟生物电信号的放大，A / D转换，信号采样，以及通过无线通信链路将信号传送到远程处理系统。 可植入逻辑电路的功率来自无线链路上的外部源。