公开(公告)号：US09385087B2

公开(公告)日：2016-07-05

申请号：US14057084

申请日：2013-10-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Debarsi Chakraborty ,  Aveek N. Chatterjee

IPC: H01L23/538 ,  H01L49/02 ,  H01L23/522

CPC classification number: H01L23/5384 ,  H01L23/5228 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Various embodiments include resistor structures. Particular embodiments include a resistor structure having multiple oxide layers, at least one of which includes a modified oxide. The modified oxide can aid in controlling the thermal capacitance and the thermal time constant of the resistor structure, or the thermal dissipation within the resistor structure.

Abstract translation: 各种实施例包括电阻器结构。 具体实施方案包括具有多个氧化物层的电阻器结构，其中至少一个包括改性氧化物。 改性氧化物可以帮助控制电阻结构的热电容和热时间常数，或电阻结构内的散热。