公开(公告)号：US09147599B2

公开(公告)日：2015-09-29

申请号：US14249480

申请日：2014-04-10

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Tsunehiro Nakajima

IPC: H01L21/30 ,  H01L21/762 ,  H01L21/18 ,  H01L21/78 ,  H01L29/66 ,  H01L21/84 ,  H01L21/683

CPC classification number: H01L21/76254 ,  H01L21/187 ,  H01L21/6836 ,  H01L21/78 ,  H01L21/7806 ,  H01L21/84 ,  H01L29/66333

Abstract: A method is disclosed for separating a support substrate from a solid-phase bonded wafer which includes a Si wafer and support substrate solid-phase bonded to back surface of the Si wafer. The method includes a step of irradiating the Si wafer with laser light with a wavelength which passes through the Si wafer and is focused on a solid-phase bonding interface between the Si wafer and support substrate to form a breaking layer in at least part of an outer circumferential portion of the solid-phase bonding interface, a step of separating the breaking layer; and a step of separating the solid-phase bonding interface. The method is capable of using a Si thin wafer without substantial wafer cracking at an initial stage where the wafer is inputted to a wafer process, capable of separating a support substrate from the Si thin wafer easily, and capable of reducing the wafer cost.

Abstract translation: 公开了一种用于将支撑衬底与固相接合晶片分离的方法，该固态晶片包括固定于Si晶片后表面的Si晶片和支撑衬底。 该方法包括用穿过Si晶片的波长的激光照射Si晶片并聚焦在Si晶片和支撑衬底之间的固相接合界面上以在至少部分 固相接合界面的外周部分，分离断裂层的步骤; 以及分离固相接合界面的步骤。 该方法能够在将晶片输入到晶片工艺的初始阶段使用Si薄晶片而不会发生实质的晶片破裂，能够容易地将支撑衬底与Si薄晶片分离，并且能够降低晶片成本。

公开(公告)号：US10374050B2

公开(公告)日：2019-08-06

申请号：US14960293

申请日：2015-12-04

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Fumikazu Imai ,  Tsunehiro Nakajima

IPC: H01L29/45 ,  H01L21/04 ,  H01L29/16 ,  C23C14/18

Abstract: A titanium layer and a nickel layer are sequentially formed on a back surface of a SiC wafer. Next, by high-temperature heat treatment, the SiC wafer is heated and the titanium layer and the nickel layer are sintered forming a nickel silicide layer that includes titanium carbide. By this high-temperature heat treatment, an ohmic contact of the SiC wafer and the nickel silicide layer is formed. Thereafter, on the nickel silicide layer, a back surface electrode multilayered structure is formed by sequentially stacking a titanium layer, a nickel layer, and a gold layer. Here, in forming the nickel layer that configures a back surface electrode multilayered structure, the nickel layer is formed under a condition that satisfies 0.0

公开(公告)号：US09685333B2

公开(公告)日：2017-06-20

申请号：US15017576

申请日：2016-02-05

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Tsunehiro Nakajima ,  Masanobu Iwaya ,  Fumikazu Imai

IPC: H01L21/04 ,  H01L21/304 ,  H01L21/306 ,  H01L29/45 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L21/0485 ,  H01L21/0475 ,  H01L21/304 ,  H01L21/30625 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7802

Abstract: A method of manufacturing a silicon carbide semiconductor device includes grinding a back surface of a semiconductor substrate formed of silicon carbide to reduce thickness thereof and provide an altered layer that is ground; removing by polishing or etching, the altered layer from the back surface; forming a nickel film on the back surface of the semiconductor substrate after removing the altered layer; heat treating the nickel film to forming a nickel silicide layer by silicidation; and forming a metal electrode on a surface of the nickel silicide layer.

公开(公告)号：US08722487B2

公开(公告)日：2014-05-13

申请号：US13674630

申请日：2012-11-12

Applicant: Fuji Electric Co., Ltd.

Inventor： Kenichi Kazama ,  Tsunehiro Nakajima ,  Koji Sasaki ,  Akio Shimizu ,  Takashi Hayashi ,  Hiroki Wakimoto

IPC: H01L21/8249

CPC classification number: H01L29/7393 ,  H01L29/0834 ,  H01L29/41725 ,  H01L29/456 ,  H01L29/66333 ,  H01L29/7395

Abstract: A semiconductor device, including a silicon substrate having a first major surface and a second major surface, a front surface device structure formed in a region of the first major surface, and a rear electrode formed in a region of the second major surface. The rear electrode includes, as a first layer thereof, an aluminum silicon film that is formed by evaporating or sputtering aluminum-silicon onto the second major surface, the aluminum silicon film having a silicon concentration of at least 2 percent by weight and a thickness of less than 0.3 μm.

Abstract translation: 一种半导体器件，包括具有第一主表面和第二主表面的硅衬底，形成在第一主表面的区域中的前表面器件结构和形成在第二主表面的区域中的后电极。 后电极包括通过将铝硅蒸发或溅射到第二主表面上而形成的铝硅膜，所述铝硅膜的硅浓度至少为2重量％，厚度为 小于0.3μm。

公开(公告)号：US10600921B2

公开(公告)日：2020-03-24

申请号：US15152522

申请日：2016-05-11

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Naoyuki Ohse ,  Fumikazu Imai ,  Tsunehiro Nakajima ,  Kenji Fukuda ,  Shinsuke Harada ,  Mitsuo Okamoto

IPC: H01L29/872 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/47 ,  H01L29/167

Abstract: In forming an ohmic electrode on a back surface of an n-type SiC substrate, an n+-type semiconductor region is formed in a surface layer of the back surface of an n-type epitaxial substrate by ion implantation. In this ion implantation, the impurity concentration of the n+-type semiconductor region is a predetermined range and preferably a predetermined value or less, and an n-type impurity is implanted by acceleration energy of a predetermined range such that the n+-type semiconductor region has a predetermined thickness or less. Thereafter, a nickel layer and a titanium layer are sequentially formed on the surface of the n+-type semiconductor region, the nickel layer is heat treated to form a silicide, and the ohmic electrode formed from nickel silicide is formed. In this manner, a back surface electrode that has favorable properties can be formed while peeling of the back surface electrode can be suppressed.

公开(公告)号：US09905684B2

公开(公告)日：2018-02-27

申请号：US14641244

申请日：2015-03-06

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Haruo Nakazawa ,  Masaaki Ogino ,  Tsunehiro Nakajima

IPC: H01L29/78 ,  H01L21/683 ,  H01L29/16 ,  H01L29/66 ,  H01L29/739 ,  H01L29/47 ,  H01L29/06 ,  H01L29/20 ,  H01L21/04 ,  H01L21/78 ,  H01L29/417 ,  H01L29/08

CPC classification number: H01L29/7802 ,  H01L21/046 ,  H01L21/0495 ,  H01L21/6835 ,  H01L21/78 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/0834 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/41741 ,  H01L29/47 ,  H01L29/475 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7396 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: A semiconductor device includes a semiconductor substrate that is made of a semiconductor material with a wider band gap than silicon, a field effect transistor, including a front surface element structure, provided on a front surface of the substrate, and a drain electrode having surface contact with the substrate so as to form a Schottky junction between the semiconductor substrate and the drain electrode.

公开(公告)号：US08962405B2

公开(公告)日：2015-02-24

申请号：US13798589

申请日：2013-03-13

Applicant: Fuji Electric Co., Ltd.

Inventor： Tsunehiro Nakajima ,  Haruo Nakazawa

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/66 ,  G03F9/00 ,  H01L29/06 ,  H01L29/66 ,  H01L29/739 ,  H01L21/683 ,  H01L23/544 ,  H01L21/266

CPC classification number: H01L22/12 ,  G03F9/7084 ,  G03F9/7088 ,  H01L21/266 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/544 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/66333 ,  H01L29/7395 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In some aspects of the invention, a circuit pattern of a front surface structure is formed in a front surface of a semiconductor wafer and an alignment mark is formed on the front surface of a semiconductor wafer. A transparent supporting substrate is attached to the front surface of the semiconductor wafer by a transparent adhesive. Then, a resist is applied onto a rear surface of the semiconductor wafer. Then, the semiconductor wafer is mounted on a stage of an exposure apparatus, with the supporting substrate down. Then, the alignment mark formed on the front surface of the semiconductor wafer is recognized by a camera, and the positions of the semiconductor wafer and a photomask are aligned with each other. Then, the resist is patterned. Then, a circuit pattern is formed in the rear surface of the semiconductor wafer.

Abstract translation: 在本发明的一些方面，在半导体晶片的前表面形成前表面结构的电路图形，并且在半导体晶片的前表面上形成对准标记。 通过透明粘合剂将透明支撑基板附着到半导体晶片的前表面。 然后，将抗蚀剂施加到半导体晶片的后表面上。 然后，将半导体晶片安装在曝光装置的台上，使支撑基板向下。 然后，通过照相机识别在半导体晶片的前表面上形成的对准标记，并且半导体晶片和光掩模的位置彼此对准。 然后，抗蚀剂被图案化。 然后，在半导体晶片的后表面形成电路图形。

公开(公告)号：US10079155B2

公开(公告)日：2018-09-18

申请号：US15643002

申请日：2017-07-06

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Tsunehiro Nakajima ,  Yoshikazu Takahashi ,  Norihiro Nashida

IPC: H01L23/482 ,  H01L21/321 ,  H01L23/00 ,  H01L23/492 ,  H01L25/065 ,  H01L25/00 ,  H01L21/283 ,  H01L23/373 ,  H01L21/683 ,  H01L23/498

Abstract: A semiconductor device manufacturing method, sequentially includes a semiconductor element preparation step of preparing a first semiconductor element on which is formed a plurality of metal electrodes, a step of covering a surface of the first semiconductor element on which the metal electrode is not formed with a first insulating member, and a step of forming a second metal layer that conductively connects the metal electrode of the first semiconductor element and a first metal layer on an insulated circuit substrate across the second insulating member.

公开(公告)号：US09972521B2

公开(公告)日：2018-05-15

申请号：US14844647

申请日：2015-09-03

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Tsunehiro Nakajima

IPC: H01L21/683 ,  H01L21/304 ,  B23K26/00 ,  B32B37/12 ,  B32B38/00 ,  B32B7/06 ,  B32B17/06 ,  B32B37/18 ,  B32B38/10

CPC classification number: H01L21/6835 ,  B23K26/57 ,  B32B7/06 ,  B32B17/06 ,  B32B37/1284 ,  B32B37/18 ,  B32B38/0012 ,  B32B38/10 ,  B32B2038/0016 ,  B32B2315/08 ,  B32B2457/14 ,  H01L21/304 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2221/68386

Abstract: A glass substrate is bonded to a front surface of a wafer on which a front surface element structure is formed, with an adhesive layer interposed therebetween. An adhesive layer is formed on the wafer to extend from the front surface of the wafer to a chamfered portion and a side surface of the wafer. The adhesive layer is formed on a first surface of the glass substrate and is not formed on a chamfered portion and a side surface of the glass substrate. After the rear surface of the wafer is ground, a rear surface element structure is formed on the ground rear surface. A laser beam is radiated to the glass substrate and the glass substrate is peeled from the adhesive layer. The adhesive layer is removed and the wafer is cut by dicing. In this way, a chip having a thin semiconductor device formed thereon is completed.

公开(公告)号：US09728441B2

公开(公告)日：2017-08-08

申请号：US14844845

申请日：2015-09-03

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Masaaki Tachioka ,  Tsunehiro Nakajima

IPC: H01L21/268 ,  H01L21/683 ,  C09J183/06 ,  B23K26/00 ,  C09J183/08 ,  H01L21/762 ,  H01L21/20 ,  B23K101/40 ,  B23K103/00

CPC classification number: H01L21/6835 ,  B23K26/0006 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/56 ,  C09J183/06 ,  C09J183/08 ,  H01L21/2007 ,  H01L21/268 ,  H01L21/76254 ,  H01L21/76259 ,  H01L2221/68318 ,  H01L2221/68381

Abstract: A method for manufacturing a semiconductor device includes: bonding at least a part of the rear surface of a semiconductor wafer, and a supporting substrate in use of using a silane coupling agent; forming a functional structure on a front surface of the semiconductor wafer; placing a condensation point of laser light transmitted through the semiconductor wafer on a bonding interface between the semiconductor wafer and the supporting substrate, and irradiating the bonding interface with the laser light, thereby forming a fracture layer on at least a part of an outer circumferential section of the bonding interface; separating the bonding interface; and carrying out rear surface processing on the rear surface of the semiconductor wafer.