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公开(公告)号：US11139279B2
公开(公告)日：2021-10-05
申请号：US16389263
申请日：2019-04-19
Applicant: EPISTAR CORPORATION
Inventor： Chia-Liang Hsu
Abstract: A light-emitting diode includes a transparent substrate with a first surface, a second surface opposite to the first surface, and a side surface connected to the first surface and the second surface; a first light-emitting structure; a second light-emitting structure; a connecting layer, connected to the first light-emitting structure and the second light-emitting structure; a circuit arranged between the transparent substrate and the first light-emitting structure, and having a portion formed on the first surface without extending to the second surface; and a structure with diffusers, covering the first light-emitting structure and the second light-emitting structure on the first surface without crossing over the side surface.
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公开(公告)号：US09793451B2
公开(公告)日：2017-10-17
申请号：US14553513
申请日：2014-11-25
Applicant: EPISTAR CORPORATION
Inventor： Chia-Liang Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Tzu-Chieh Hsu , Min-Hsun Hsieh
CPC classification number: H01L33/56 , G02B6/0025 , G02B6/0031 , G02B6/0073 , H01L33/48 , H01L33/486 , H01L33/50 , H01L33/507 , H01L33/54 , H01L33/60 , H01L2224/48091 , H01L2924/00014
Abstract: An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface, and the first surface and the surface of the circuit carrier includes an included angle larger than zero; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; and a second transparent glue formed on the second surface corresponding to the first transparent glue; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection.
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公开(公告)号：US09768150B2
公开(公告)日：2017-09-19
申请号：US14670900
申请日：2015-03-27
Applicant: EPISTAR CORPORATION
Inventor： Chia-Liang Hsu
CPC classification number: H01L25/0753 , H01L25/50 , H01L33/483 , H01L33/50 , H01L33/62 , H01L2224/48091 , H01L2224/48095 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014
Abstract: An LED display comprises a first end providing a current, a second end receiving the current, a first LED chip, electrically connected between the first end and the second end, emitting a first light, and a second LED chip, emitting a second light, electrically connected to the first end and is insulated from the second end. The current flows from the first end and through the first LED chip to the second end.
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公开(公告)号：US09614127B2
公开(公告)日：2017-04-04
申请号：US14902795
申请日：2013-07-05
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu Huang , Yao-Ning Chan , Tzu Chieh Hsu , Yi Ming Chen , Hsin-Chih Chiu , Chih-Chiang Lu , Chia-Liang Hsu , Chun-Hsien Chang
CPC classification number: H01L33/62 , H01L25/167 , H01L33/0079 , H01L33/0095 , H01L33/38 , H01L33/385 , H01L33/48 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066
Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.
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公开(公告)号：US09515225B2
公开(公告)日：2016-12-06
申请号：US14953876
申请日：2015-11-30
Applicant: Epistar Corporation
Inventor： Ching-Huai Ni , Chia-Liang Hsu , Yi-Ming Chen
CPC classification number: H01L33/382 , H01L33/22 , H01L33/24 , H01L33/30 , H01L33/32 , H01L2933/0016
Abstract: A light-emitting device of an embodiment of the present disclosure comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer, wherein the first type semiconductor layer comprises a non-planar roughened surface; a bonding layer formed between the substrate and the semiconductor stack; and multiple recesses each comprising a bottom surface lower than the non-planar roughened surface; and multiple buried electrodes physically buried in the first type semiconductor layer, wherein the multiple buried electrodes are formed in the multiple recesses respectively, and one of the multiple buried electrodes comprises an upper surface higher than the non-planar roughened surface of the first type semiconductor layer.
Abstract translation: 本公开的实施例的发光器件包括衬底; 包括第一类型半导体层，第二类型半导体层和形成在第一类型半导体层和第二类型半导体层之间的有源层的半导体堆叠，其中第一类型半导体层包括非平面粗糙表面; 形成在所述基板和所述半导体叠层之间的接合层; 以及多个凹部，每个凹部包括比所述非平面粗糙表面低的底面; 以及物理地埋置在第一类型半导体层中的多个埋置电极，其中多个埋入电极分别形成在多个凹槽中，并且多个埋入电极中的一个包括比第一类型半导体的非平面粗糙化表面高的上表面 层。
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Patent Agency Ranking
公开(公告)号：US09316687B2
公开(公告)日：2016-04-19
申请号：US14187194
申请日：2014-02-21
Applicant: EPISTAR CORPORATION
Inventor： Chia-Liang Hsu , Chih-Chiang Lu
IPC: G01J1/42 , G01R31/308 , G01R31/44 , G01R31/26
CPC classification number: G01R31/308 , G01J1/42 , G01J2001/4252 , G01R31/2635 , G01R31/44
Abstract: Disclosed is a method for testing a light-emitting device comprising the steps of: providing a light-emitting device comprising a plurality of light-emitting diodes; driving the plurality of the light-emitting diodes with a current; generating an image of the light-emitting device; and determining a luminous intensity of each of the light-emitting diodes; wherein the magnitude of the current is determined such that the current density driving each of the light-emitting diodes is smaller than or equal to 300 mA/mm2.
Abstract translation: 公开了一种用于测试发光器件的方法，包括以下步骤：提供包括多个发光二极管的发光器件; 用电流驱动多个发光二极管; 产生发光装置的图像; 以及确定每个所述发光二极管的发光强度; 其中确定电流的大小使得驱动每个发光二极管的电流密度小于或等于300mA / mm2。
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公开(公告)号：US09153747B2
公开(公告)日：2015-10-06
申请号：US14302036
申请日：2014-06-11
Applicant: Epistar Corporation
Inventor： Wen-Luh Liao , Chien-Chung Hsu , Yao-Ru Chang , Shih-I Chen , Chia-Liang Hsu
CPC classification number: H01L33/46 , H01L33/38 , H01L33/42 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting element includes a light-emitting stack which has an active layer, and a non-oxide insulative layer below the light-emitting stack, wherein a refractive index of the non-oxide insulative layer is less than 1.4.
Abstract translation: 发光元件包括具有有源层的发光叠层和发光叠层下面的非氧化物绝缘层，其中非氧化物绝缘层的折射率小于1.4。
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公开(公告)号：US20150263256A1
公开(公告)日：2015-09-17
申请号：US14657714
申请日：2015-03-13
Applicant: EPISTAR CORPORATION
Inventor： Min-Hsun Hsieh , Guan-Ru He , Chao-Hsing Chen , Jui-Hung Yeh , Chia-Liang Hsu
CPC classification number: H01L33/62 , H01L21/568 , H01L25/0753 , H01L33/36 , H01L33/38 , H01L2224/04105 , H01L2224/18 , H01L2224/19 , H01L2924/3512
Abstract: The present application discloses a light-emitting array, comprising a first light-emitting chip; a second light-emitting chip; and a conductive line electrically connected to the first light-emitting chip and the second light-emitting chip, wherein the conductive line includes a first segment and a second segment having a radius curvature different from that of the first segment.
Abstract translation: 本申请公开了一种发光阵列，包括第一发光芯片; 第二发光芯片; 以及电连接到第一发光芯片和第二发光芯片的导线，其中导线包括具有与第一段不同的半径曲率的第一段和第二段。
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公开(公告)号：US09006774B2
公开(公告)日：2015-04-14
申请号：US13932661
申请日：2013-07-01
Applicant: Epistar Corporation
Inventor： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chien-Fu Huang , Ching-Pei Lin
Abstract: An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.
Abstract translation: 一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。
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公开(公告)号：US11894481B2
公开(公告)日：2024-02-06
申请号：US17510522
申请日：2021-10-26
Applicant: EPISTAR CORPORATION
Inventor： Yi-Chieh Lin , Shiuan-Leh Lin , Yung-Fu Chang , Shih-Chang Lee , Chia-Liang Hsu , Yi Hsiao , Wen-Luh Liao , Hong-Chi Shih , Mei-Chun Liu
IPC: H01L31/02 , H01L31/167 , H01L31/0304 , H01L31/0232 , H01L25/16 , A61B5/024 , A61B5/021 , A61B5/1455 , A61B5/145 , G01J3/10
CPC classification number: H01L31/167 , A61B5/02141 , A61B5/02427 , A61B5/02433 , A61B5/14546 , A61B5/14552 , G01J3/10 , H01L25/167 , H01L31/02005 , H01L31/02325 , H01L31/03046
Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.
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