公开(公告)号：US09362452B2

公开(公告)日：2016-06-07

申请号：US13918374

申请日：2013-06-14

Applicant: EPISTAR CORPORATION

Inventor： Shih Pang Chang ,  Ta Cheng Hsu ,  Min Hsun Hsieh

IPC: H01L33/22 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/007

Abstract: A light-emitting device includes: a substrate including an upper surface, wherein the upper surface includes an ion implantation region; a semiconductor layer formed on the upper surface; a light-emitting stack formed on the semiconductor layer; and a plurality of scattering cavities formed between the semiconductor layer and the upper surface in accordance with the ion implantation region.

Abstract translation: 发光装置包括：包括上表面的基板，其中所述上表面包括离子注入区域; 形成在上表面上的半导体层; 形成在所述半导体层上的发光叠层; 以及根据离子注入区域在半导体层和上表面之间形成的多个散射腔。