公开(公告)号：US09793436B2

公开(公告)日：2017-10-17

申请号：US15332730

申请日：2016-10-24

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Shih-I Chen ,  You-Hsien Chang ,  Hao-Min Ku ,  Ching-Yuan Tsai ,  Kuan-Chih Kuo ,  Chih-Hung Hsiao ,  Rong-Ren Lee

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/02 ,  H01L33/24 ,  H01L33/10 ,  H01L33/30 ,  H01L33/42 ,  H01L33/14 ,  H01L33/20 ,  H01L33/40

CPC classification number: H01L33/22 ,  H01L33/02 ,  H01L33/025 ,  H01L33/10 ,  H01L33/145 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/305 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.

公开(公告)号：US10038117B2

公开(公告)日：2018-07-31

申请号：US15699658

申请日：2017-09-08

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Shih-I Chen ,  You-Hsien Chang ,  Hao-Min Ku ,  Ching-Yuan Tsai ,  Kuan-Chih Kuo ,  Chih-Hung Hsiao ,  Rong-Ren Lee

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/10 ,  H01L33/24 ,  H01L33/38 ,  H01L33/30 ,  H01L33/02 ,  H01L33/40 ,  H01L33/20 ,  H01L33/42 ,  H01L33/14

CPC classification number: H01L33/22 ,  H01L33/02 ,  H01L33/025 ,  H01L33/10 ,  H01L33/145 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/305 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.

公开(公告)号：US10566498B2

公开(公告)日：2020-02-18

申请号：US16043981

申请日：2018-07-24

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Shih-I Chen ,  You-Hsien Chang ,  Hao-Min Ku ,  Ching-Yuan Tsai ,  Kuan-Chih Kuo ,  Chih-Hung Hsiao ,  Rong-Ren Lee

IPC: H01L33/22 ,  H01L33/38 ,  H01L33/02 ,  H01L33/24 ,  H01L33/10 ,  H01L33/30 ,  H01L33/26 ,  H01L33/42 ,  H01L33/14 ,  H01L33/20 ,  H01L33/40

Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.