公开(公告)号：US10283346B2

公开(公告)日：2019-05-07

申请号：US15450355

申请日：2017-03-06

Applicant: ENRAYTEK OPTOELECTRONICS CO., LTD.

Inventor： Houyong Ma ,  Jing Ju ,  Zhengzhang You ,  Qiming Li ,  Jingchao Xie

IPC: H01L21/02 ,  C30B33/02 ,  C30B29/20 ,  C30B33/10 ,  B08B3/08 ,  B08B7/00 ,  B08B7/04

Abstract: A method for recycling a sapphire substrate is disclosed. The method includes the steps of: high-temperature baking, wherein an intact epitaxial wafer to be scrapped is placed and baked in a baking oven at a high temperature of from 600° C. to 1000° C., and wherein the epitaxial wafer contains the sapphire substrate; and high-temperature rinsing in a concentrated acid, wherein the baked epitaxial wafer is then rinsed in the concentrated acid having a concentration ranging from 60% to 99% at a high temperature of from 160° C. to 300° C. The method can be used for recycling both patterned and smooth sapphire substrates.