公开(公告)号：US20060102951A1

公开(公告)日：2006-05-18

申请号：US11275494

申请日：2006-01-10

Applicant: Da-Soon Lee

Inventor： Da-Soon Lee

IPC: H01L29/788 ,  H01L21/336

CPC classification number: H01L27/11521 ,  H01L27/115

Abstract: The present invention discloses a nonvolatile memory device which can improve the data storage capacity without increasing the surface area of the device, and a method for manufacturing the same. The nonvolatile memory device comprises: a gate of a stack type structure formed on an active region of a semiconductor substrate; a source/drain formed in the substrate at both sides of the gate of the stack type structure; an interlayer insulating film formed on the substrate where the source/drain is formed and covering the gate of the stack type structure; a contact connected to the source/drain through the interlayer insulating film; a plurality of conductive patterns formed in the interlayer insulating film of the region not adjacent to the contact; and an electrode pad formed on the conductive patterns.

Abstract translation: 本发明公开了一种能够提高数据存储容量而不增加装置的表面积的非易失性存储装置及其制造方法。 非易失性存储器件包括：形成在半导体衬底的有源区上的堆叠型结构的栅极; 在堆叠型结构的栅极的两侧形成在基板中的源极/漏极; 形成在基板上形成源极/漏极并覆盖堆叠型结构的栅极的层间绝缘膜; 通过层间绝缘膜连接到源极/漏极的触点; 多个导电图案形成在与接触不相邻的区域的层间绝缘膜中; 以及形成在导电图案上的电极焊盘。

公开(公告)号：US07989874B2

公开(公告)日：2011-08-02

申请号：US11275494

申请日：2006-01-10

Applicant: Da-Soon Lee

Inventor： Da-Soon Lee

IPC: H01L29/788

CPC classification number: H01L27/11521 ,  H01L27/115

Abstract: The present invention discloses a nonvolatile memory device which can improve the data storage capacity without increasing the surface area of the device, and a method for manufacturing the same. The nonvolatile memory device comprises: a gate of a stack type structure formed on an active region of a semiconductor substrate; a source/drain formed in the substrate at both sides of the gate of the stack type structure; an interlayer insulating film formed on the substrate where the source/drain is formed and covering the gate of the stack type structure; a contact connected to the source/drain through the interlayer insulating film; a plurality of conductive patterns formed in the interlayer insulating film of the region not adjacent to the contact; and an electrode pad formed on the conductive patterns.

Abstract translation: 本发明公开了一种能够提高数据存储容量而不增加装置的表面积的非易失性存储装置及其制造方法。 非易失性存储器件包括：形成在半导体衬底的有源区上的堆叠型结构的栅极; 在堆叠型结构的栅极的两侧形成在基板中的源极/漏极; 形成在基板上形成源极/漏极并覆盖堆叠型结构的栅极的层间绝缘膜; 通过层间绝缘膜连接到源极/漏极的触点; 多个导电图案形成在与接触不相邻的区域的层间绝缘膜中; 以及形成在导电图案上的电极焊盘。