公开(公告)号：US10177004B2

公开(公告)日：2019-01-08

申请号：US15922086

申请日：2018-03-15

Applicant: DISCO CORPORATION

Inventor： Yoshio Watanabe ,  Siry Milan ,  Kenji Okazaki ,  Hiroyuki Takahashi ,  Yoshiteru Nishida ,  Satoshi Kumazawa

IPC: H01L21/3065 ,  H01L21/78 ,  H01L21/223 ,  H01L21/02 ,  H01J37/32

Abstract: A method of processing a wafer includes a plasma etching step of supplying an etching gas in a plasma state to the wafer to remove processing strains, debris, or modified layers. The plasma etching step includes turning an etching gas into a plasma state outside of a vacuum chamber which houses the wafer therein and delivering the etching gas in the plasma state into the vacuum chamber through a supply nozzle connected to the vacuum chamber.

公开(公告)号：US10176972B2

公开(公告)日：2019-01-08

申请号：US15151072

申请日：2016-05-10

Applicant: DISCO CORPORATION

Inventor： Yoshio Watanabe ,  Siry Milan ,  Hiroyuki Takahashi ,  Takeshi Seki

IPC: H01J37/32

Abstract: A plasma etching apparatus includes: a vacuum chamber; a rotatable electrostatic chuck table for holding a workpiece in the vacuum chamber; a nozzle for supplying a plasma etching gas to part of the workpiece held on the electrostatic chuck table; a nozzle oscillating unit for oscillating the nozzle in such a manner as to describe a horizontal arcuate locus between a region corresponding to the center of the electrostatic chuck table and a region corresponding to the outer periphery of the electrostatic chuck table; and a control unit that controls the rotation amount of the electrostatic chuck table and the position of the nozzle to thereby position the nozzle into a region corresponding to an arbitrary part of the workpiece held on the electrostatic chuck table.

公开(公告)号：US20180269068A1

公开(公告)日：2018-09-20

申请号：US15922086

申请日：2018-03-15

Applicant: DISCO CORPORATION

Inventor： Yoshio Watanabe ,  Siry Milan ,  Kenji Okazaki ,  Hiroyuki Takahashi ,  Yoshiteru Nishida ,  Satoshi Kumazawa

IPC: H01L21/3065 ,  H01L21/78

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32577 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/2236 ,  H01L21/78

Abstract: A method of processing a wafer includes a plasma etching step of supplying an etching gas in a plasma state to the wafer to remove processing strains, debris, or modified layers. The plasma etching step includes turning an etching gas into a plasma state outside of a vacuum chamber which houses the wafer therein and delivering the etching gas in the plasma state into the vacuum chamber through a supply nozzle connected to the vacuum chamber.

公开(公告)号：US20160343544A1

公开(公告)日：2016-11-24

申请号：US15151072

申请日：2016-05-10

Applicant: DISCO CORPORATION

Inventor： Yoshio Watanabe ,  Siry Milan ,  Hiroyuki Takahashi ,  Takeshi Seki

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32357 ,  H01J37/32541 ,  H01J37/32834 ,  H01J2237/334

Abstract: A plasma etching apparatus includes: a vacuum chamber; a rotatable electrostatic chuck table for holding a workpiece in the vacuum chamber; a nozzle for supplying a plasma etching gas to part of the workpiece held on the electrostatic chuck table; a nozzle oscillating unit for oscillating the nozzle in such a manner as to describe a horizontal arcuate locus between a region corresponding to the center of the electrostatic chuck table and a region corresponding to the outer periphery of the electrostatic chuck table; and a control unit that controls the rotation amount of the electrostatic chuck table and the position of the nozzle to thereby position the nozzle into a region corresponding to an arbitrary part of the workpiece held on the electrostatic chuck table.

Abstract translation: 等离子体蚀刻装置包括：真空室; 用于将工件保持在真空室中的可旋转静电卡盘台; 用于向保持在静电卡盘台上的工件的一部分供给等离子体蚀刻气体的喷嘴; 喷嘴振荡单元，用于使喷嘴振动，以描述与静电卡盘台的中心相对应的区域和对应于静电卡盘台的外周的区域之间的水平弧形轨迹; 以及控制单元，其控制静电卡盘的旋转量和喷嘴的位置，从而将喷嘴定位在与保持在静电卡盘台上的工件的任意部分相对应的区域中。