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    Enhanced thermal transfer in a semiconductor structure
    1.
    发明授权
    Enhanced thermal transfer in a semiconductor structure 有权

    公开(公告)号：US10224268B1

    公开(公告)日：2019-03-05

    申请号：US15362504

    申请日：2016-11-28

    Applicant: CoolStar Technology, Inc.

    Inventor： Shuming Xu ,  Yi Zheng

    IPC: H01L23/495 ,  H01L23/31 ,  H01L21/48

    Abstract: A semiconductor device having enhanced thermal transfer includes at least one die, including a device layer in which one or more functional circuit elements are formed and a substrate supporting the device layer, and a support structure. The die is disposed on the support structure using at least one connection structure coupled between the device layer and the support structure. A back surface of the substrate is textured so as to increase a surface area of the back surface to thereby enhance thermal transfer between the substrate and an external environment.

    LOSSLESS SWITCH FOR RADIO FREQUENCY FRONT-END MODULE
    2.
    发明申请
    LOSSLESS SWITCH FOR RADIO FREQUENCY FRONT-END MODULE 审中-公开

    公开(公告)号：US20180316382A1

    公开(公告)日：2018-11-01

    申请号：US15398774

    申请日：2017-01-05

    Applicant: CoolStar Technology, Inc.

    Inventor： Shuming Xu

    IPC: H04B1/44

    Abstract: An integrated front-end module (FEM) includes at least one power amplifier (PA) coupled to an antenna without inclusion of a switching element in a transmit signal path in the FEM between an output of the PA and the antenna. The FEM further includes at least one low-noise amplifier (LNA) and a switching circuit coupled in a receive signal path of the FEM between the antenna and an input of the LNA. The switching circuit is configured in a first mode to disable the PA and to connect the input of the LNA to the antenna for receiving signals from the antenna. The switching circuit is configured in a second mode to disconnect the input of the LNA from the antenna and to enable the PA for transmitting signals to the antenna.

    Enhanced integration of DMOS and CMOS semiconductor devices
    3.
    发明授权
    Enhanced integration of DMOS and CMOS semiconductor devices 有权

    公开(公告)号：US10134641B2

    公开(公告)日：2018-11-20

    申请号：US15015956

    申请日：2016-02-04

    Applicant: CoolStar Technology, Inc.

    Inventor： Shuming Xu

    IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/49 ,  H01L21/28 ,  H01L27/092 ,  H01L29/40 ,  H01L21/8234

    Abstract: A method of fabricating a power semiconductor device includes: forming at least one lateral diffused metal-oxide-semiconductor (LDMOS) structure having a first fully silicided gate including a first metal silicide material; and forming at least one complementary metal-oxide-semiconductor (CMOS) structure integrated with the LDMOS structure on a same substrate, the CMOS structure having a second fully silicided gate including a second metal silicide material. The first metal silicide material preferably includes tungsten silicide and the second metal silicide material includes a material other than tungsten silicide.

    Adaptive Envelope Tracking for Biasing Radio Frequency Power Amplifiers
    4.
    发明申请
    Adaptive Envelope Tracking for Biasing Radio Frequency Power Amplifiers 有权
    用于偏置射频功率放大器的自适应包络跟踪

    公开(公告)号：US20160036388A1

    公开(公告)日：2016-02-04

    申请号：US14815680

    申请日：2015-07-31

    Applicant: CoolStar Technology, Inc.

    Inventor： Shuming Xu ,  Wenhua Dai

    IPC: H03F1/02 ,  H04B1/04 ,  H04W88/02 ,  H03F3/19 ,  H03F3/21

    CPC classification number: H04B1/0458 ,  H03F1/0227 ,  H03F1/0266 ,  H03F3/005 ,  H03F3/19 ,  H03F3/245 ,  H03F2200/102 ,  H03F2200/451 ,  H03F2200/555 ,  H04B2001/0416

    Abstract: An RF PA is designed to operate efficiently for average powers when biased at the system supply voltage, and uses an envelope tracking power supply to boost the bias voltage to maintain good efficiency at higher powers. As a result, for a majority of the time when transmitting average power signals, the RF PA bias voltage is the system-wide supply voltage (e.g. 3.4V in cell phones), which eliminates the need for stepping down voltages. The bias voltage is boosted during the less frequent times when higher power is needed. As a result, only a boost type of DC voltage converter is needed. The efficiency of the RF PA is therefore increased because voltage conversion is required less frequently and only when higher power RF signals are transmitted.

    Abstract translation: RF PA被设计为在系统电源电压偏置时有效地平均功率运行，并使用包络跟踪电源来提高偏置电压，以在较高功率下保持良好的效率。 结果，在传输平均功率信号的大部分时间中，RF PA偏置电压是系统范围的电源电压（例如，手机中的3.4V），这消除了对降压的需要。 在需要更高功率的较不频繁的时间内，偏置电压被提升。 因此，仅需要升压型直流电压转换器。 因此，由于需要较低频率的电压转换并且仅在传输更高功率的RF信号时才提高RF PA的效率。

    Enhanced thermal transfer in a semiconductor structure
    5.
    发明授权
    Enhanced thermal transfer in a semiconductor structure 有权

    公开(公告)号：US10566270B2

    公开(公告)日：2020-02-18

    申请号：US16121721

    申请日：2018-09-05

    Applicant: Coolstar Technology, Inc.

    Inventor： Shuming Xu ,  Yi Zheng

    IPC: H01L21/48 ,  H01L23/495 ,  H01L23/367 ,  H01L23/427 ,  H01L23/31 ,  H01L29/06

    Abstract: A semiconductor device having enhanced thermal transfer includes at least one die, including a device layer in which one or more functional circuit elements are formed and a substrate supporting the device layer, and a support structure. The die is disposed on the support structure using at least one connection structure coupled between the device layer and the support structure. A back surface of the substrate is textured so as to increase a surface area of the back surface to thereby enhance thermal transfer between the substrate and an external environment.

    Semiconductor device having enhanced high-frequency capability and methods for making same
    8.
    发明授权
    Semiconductor device having enhanced high-frequency capability and methods for making same 有权

    公开(公告)号：US10141271B1

    公开(公告)日：2018-11-27

    申请号：US15462355

    申请日：2017-03-17

    Applicant: Coolstar Technology, Inc.

    Inventor： Shuming Xu ,  Yi Zheng

    IPC: H01L23/552 ,  H01L21/70 ,  H01L21/48 ,  H01L23/00 ,  H01L23/66

    Abstract: A method of reducing electromagnetic interference in a semiconductor device includes: forming at least one functional circuit in a substrate of the semiconductor device; forming an integrated micro-shielding structure in the semiconductor device, the micro-shielding structure extending vertically through the substrate between a front surface and a back surface of the substrate and surrounding the functional circuit, the micro-shielding structure being configured to reduce radio frequency (RF) emissions in the semiconductor device and/or RF coupling between different functional parts of the functional circuit.

    ENHANCED INTEGRATION OF DMOS AND CMOS SEMICONDUCTOR DEVICES
    10.
    发明申请
    ENHANCED INTEGRATION OF DMOS AND CMOS SEMICONDUCTOR DEVICES 审中-公开
    增强DMOS和CMOS半导体器件的集成

    公开(公告)号：US20160343712A1

    公开(公告)日：2016-11-24

    申请号：US15015956

    申请日：2016-02-04

    Applicant: CoolStar Technology, Inc.

    Inventor： Shuming Xu

    IPC: H01L27/092 ,  H01L29/49 ,  H01L29/45 ,  H01L29/40 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06

    CPC classification number: H01L21/823835 ,  H01L21/28097 ,  H01L21/823418 ,  H01L21/823443 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/0922 ,  H01L29/402 ,  H01L29/4975 ,  H01L29/66507 ,  H01L29/66659 ,  H01L29/7835

    Abstract: A method of fabricating a power semiconductor device includes: forming at least one lateral diffused metal-oxide-semiconductor (LDMOS) structure having a first fully silicided gate including a first metal silicide material; and forming at least one complementary metal-oxide-semiconductor (CMOS) structure integrated with the LDMOS structure on a same substrate, the CMOS structure having a second fully silicided gate including a second metal silicide material. The first metal silicide material preferably includes tungsten silicide and the second metal silicide material includes a material other than tungsten silicide.

    Abstract translation: 一种制造功率半导体器件的方法包括：形成具有包括第一金属硅化物材料的第一完全硅化栅的至少一个横向扩散金属氧化物半导体（LDMOS）结构; 以及在同一衬底上形成与所述LDMOS结构集成的至少一个互补金属氧化物半导体（CMOS）结构，所述CMOS结构具有包括第二金属硅化物材料的第二完全硅化栅极。 第一金属硅化物材料优选地包括硅化钨，并且第二金属硅化物材料包括除了硅化钨之外的材料。

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