公开(公告)号：US08785910B2

公开(公告)日：2014-07-22

申请号：US12926665

申请日：2010-12-02

Applicant: Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Jin-Hee Kang ,  Yul-Kyu Lee

Inventor： Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Jin-Hee Kang ,  Yul-Kyu Lee

IPC: H01L29/04 ,  H01L29/10 ,  H01L21/84 ,  H01L21/00 ,  H01L31/00

CPC classification number: H01L29/42384 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/78678

Abstract: A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å.

Abstract translation: 薄膜晶体管，包括该薄膜晶体管的显示装置和制造该显示装置的方法，该薄膜晶体管包括一基板; 基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的半导体层; 以及与半导体层电连接的源极/漏极，其中栅电极具有大约至大约的厚度，并且栅极绝缘层具有大约至大约的厚度。

公开(公告)号：US08759836B2

公开(公告)日：2014-06-24

申请号：US13589636

申请日：2012-08-20

Applicant: Chun-Gi You ,  Joon-Hoo Choi

Inventor： Chun-Gi You ,  Joon-Hoo Choi

IPC: H01L29/04 ,  H01L29/12 ,  H01L29/15

CPC classification number: H01L27/1288 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/4908

Abstract: A thin film transistor (TFT) array substrate includes a TFT including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer and a third insulating layer between the gate electrode and the source and drain electrodes, the first insulating layer and the second insulating layer extending in the TFT, a pixel electrode including a transparent conductive oxide material, the pixel electrode being on the first insulating layer and the second insulating layer and being connected to the source or drain electrodes via an opening in the third insulating layer, a capacitor including a first electrode on a same layer as the gate electrode and a second electrode on a same layer as the pixel electrode; and a fourth insulating layer covering the source and drain electrodes and exposing the pixel electrode via an opening.

Abstract translation: 薄膜晶体管（TFT）阵列基板包括：TFT，包括有源层，栅电极，源电极和漏电极，有源层和栅电极之间的第一绝缘层，以及第二绝缘层和第三绝缘层， 所述栅电极和所述源极漏极，所述第一绝缘层和在所述TFT中延伸的所述第二绝缘层，包括透明导电氧化物材料的像素电极，所述像素电极在所述第一绝缘层和所述第二绝缘层上，并且为 通过所述第三绝缘层中的开口连接到所述源电极或漏电极;电容器，包括与所述栅电极相同的层上的第一电极和与所述像素电极相同的层上的第二电极; 以及覆盖所述源电极和漏极的第四绝缘层，并且经由开口暴露所述像素电极。

公开(公告)号：US08704236B2

公开(公告)日：2014-04-22

申请号：US13223083

申请日：2011-08-31

Applicant: Chun-Gi You ,  Joon-Hoo Choi

Inventor： Chun-Gi You ,  Joon-Hoo Choi

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC classification number: H01L29/4908 ,  H01L27/1281 ,  H01L29/42384 ,  H01L29/66765

Abstract: A thin film transistor (TFT) and a flat panel display device including the same. The TFT includes a substrate, a gate electrode formed over the substrate, the gate electrode formed with silicon doped with impurities, a gate wiring connected to the gate electrode, an active layer formed over the gate electrode, and source and drain electrodes connected to the active layer. According to such a structure, since heat flow to the gate electrode during crystallization of the active layer may be prevented, stable crystallization of the active layer may be performed, and thus an error rate of a product may be decreased.

Abstract translation: 薄膜晶体管（TFT）和包括该薄膜晶体管的平板显示装置。 TFT包括衬底，形成在衬底上的栅电极，形成有掺杂有杂质的硅的栅极电极，连接到栅电极的栅极布线，形成在栅电极上的有源层，以及连接到栅电极的源极和漏极 活动层 根据这样的结构，由于可以防止在有源层结晶时向栅电极的热流，可以进行有源层的稳定的结晶化，从而可以降低产品的误差率。

公开(公告)号：US08669127B2

公开(公告)日：2014-03-11

申请号：US13860339

申请日：2013-04-10

Applicant: Yul-Kyu Lee ,  Sun Park ,  Chun-Gi You ,  Jong-Hyun Park

Inventor： Yul-Kyu Lee ,  Sun Park ,  Chun-Gi You ,  Jong-Hyun Park

IPC: H01L21/00

CPC classification number: H01L51/56 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265

Abstract: Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate on the gate insulating layer; forming a first doping region by injecting an impurity to a part that is not covered by the capacitor intermediate in the first storage plate; forming an interlayer insulating layer having a capacitor opening exposing the capacitor intermediate, and a plurality of erosion preventing layers on an edge of the capacitor intermediate toward the first doping region in the capacitor opening; removing the capacitor intermediate including the erosion preventing layer and a lower region of the erosion preventing layer, and injecting an impurity in the first storage plate through the second storage plate to form a second doping region contacting the first doping region.

Abstract translation: 制造OLED显示器包括在基板上形成覆盖第一存储板的第一存储板和栅极绝缘层; 依次形成覆盖所述第一存储板的第二存储板和在所述栅极绝缘层上的中间的电容器; 通过向第一存储板中未被电容器中间体覆盖的部分注入杂质而形成第一掺杂区; 形成具有使所述电容器中间露出的电容器开口的层间绝缘层，以及在所述电容器开口中的朝向所述第一掺杂区域的电容器的边缘上的多个防蚀蚀层; 去除包括侵蚀防止层的电容器中间件和侵蚀防止层的下部区域，以及通过第二存储板在第一存储板中注入杂质以形成与第一掺杂区域接触的第二掺杂区域。

公开(公告)号：US08624246B2

公开(公告)日：2014-01-07

申请号：US13017362

申请日：2011-01-31

Applicant: Chun-Gi You

Inventor： Chun-Gi You

IPC: H01L27/15

CPC classification number: H01L27/1288 ,  H01L27/1255 ,  H01L29/4908

Abstract: A display device and a method of manufacturing the same. In one embodiment, a display device includes a substrate having a pixel region, a transistor region and a capacitor region, a transistor arranged within the transistor region of the substrate and a capacitor arranged within the capacitor region of the substrate, wherein the capacitor includes a lower electrode arranged on the substrate, a gate insulating layer arranged on the lower electrode and an upper electrode arranged on the gate insulating layer and overlapping the lower electrode, the upper electrode includes a first conductive layer and a second conductive layer arranged on the first conductive layer, wherein the first conductive layer is opaque.

Abstract translation: 一种显示装置及其制造方法。 在一个实施例中，显示装置包括具有像素区域，晶体管区域和电容器区域的衬底，布置在衬底的晶体管区域内的晶体管和布置在衬底的电容器区域内的电容器，其中电容器包括： 布置在基板上的下电极，布置在下电极上的栅极绝缘层和布置在栅绝缘层上并与下电极重叠的上电极，上电极包括布置在第一导电层上的第一导电层和第二导电层 层，其中所述第一导电层是不透明的。

公开(公告)号：US08569766B2

公开(公告)日：2013-10-29

申请号：US13177899

申请日：2011-07-07

Applicant: Sun Park ,  Chun-Gi You ,  June-Woo Lee

Inventor： Sun Park ,  Chun-Gi You ,  June-Woo Lee

IPC: H01L33/16

CPC classification number: H01L27/3276 ,  H01L27/3262 ,  H01L27/3265

Abstract: Disclosed is an organic light-emitting display device including a transparent substrate which includes a display portion and a pad portion formed in a region around the display portion, a first semiconductor layer formed on the display portion, a second semiconductor layer formed on the pad portion, and a transparent electrode formed on each of the first the second semiconductor layers, where the first and second semiconductor layers include the same material.

Abstract translation: 公开了一种有机发光显示装置，其包括透明基板，该透明基板包括显示部分和形成在显示部分周围的区域中的焊盘部分，形成在显示部分上的第一半导体层，形成在焊盘部分上的第二半导体层 以及形成在所述第一半导体层中的每一个上的透明电极，其中所述第一和第二半导体层包括相同的材料。

公开(公告)号：US08535995B2

公开(公告)日：2013-09-17

申请号：US13183134

申请日：2011-07-14

Applicant: Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Yul-Kyu Lee ,  Sang-Ho Moon

Inventor： Jong-Hyun Park ,  Chun-Gi You ,  Sun Park ,  Yul-Kyu Lee ,  Sang-Ho Moon

IPC: H01L21/00 ,  H01L21/84 ,  H01L23/52

CPC classification number: H01L27/1288 ,  H01L29/66757 ,  H01L51/5215 ,  H01L2227/323

Abstract: A method of manufacturing an organic light-emitting display device includes forming a silicon layer and a gate insulating film over a substrate having a transistor region and a capacitor region; forming a halftone photoresist over the substrate; patterning the silicon layer and the gate insulating film; forming a residual photoresist by subjecting the halftone photoresist to an ashing process to leave part of the halftone photoresist over the transistor region; and doping at least a portion of the silicon layer with impurities by applying the impurities over an entire region of the substrate.

Abstract translation: 制造有机发光显示装置的方法包括在具有晶体管区域和电容器区域的基板上形成硅层和栅极绝缘膜; 在衬底上形成半色调光致抗蚀剂; 图案化硅层和栅极绝缘膜; 通过使所述半色调光致抗蚀剂经历灰化处理以在所述晶体管区域上留下所述半色调光刻胶的一部分来形成残余光致抗蚀剂; 以及通过在衬底的整个区域上施加杂质来掺杂杂质的硅层的至少一部分。

公开(公告)号：US08405084B2

公开(公告)日：2013-03-26

申请号：US12926377

申请日：2010-11-15

Applicant: Yul-Kyu Lee ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Jin-Hee Kang

Inventor： Yul-Kyu Lee ,  Chun-Gi You ,  Sun Park ,  Jong-Hyun Park ,  Jin-Hee Kang

IPC: H01L29/04

CPC classification number: H01L27/3248 ,  H01L27/3262

Abstract: An organic light emitting diode display includes a substrate main body, a polysilicon semiconductor layer on the substrate main body, a gate insulating layer covering the semiconductor layer, and a gate electrode and a pixel electrode on the gate insulating layer, the gate electrode and the pixel electrode each including a transparent conductive layer portion with a gate metal layer portion on the transparent conductive layer portion, and the pixel electrode including a light emitting area having the transparent conductive layer portion and a non-light emitting area having both the transparent conductive layer portion and the gate metal layer portion.

Abstract translation: 有机发光二极管显示器包括基板主体，在基板主体上的多晶硅半导体层，覆盖半导体层的栅极绝缘层，栅极绝缘层上的栅电极和像素电极，栅电极和 每个像素电极包括在透明导电层部分上具有栅极金属层部分的透明导电层部分，并且所述像素电极包括具有透明导电层部分的发光区域和具有透明导电层的非发光区域 部分和栅极金属层部分。

公开(公告)号：US20130015457A1

公开(公告)日：2013-01-17

申请号：US13310560

申请日：2011-12-02

Applicant: Chun-Gi You

Inventor： Chun-Gi You

IPC: H01L33/16 ,  H01L29/786

CPC classification number: H01L27/1288 ,  H01L27/326 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5215 ,  H01L51/5218 ,  H01L2227/323 ,  H01L2251/5369

Abstract: An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes: a thin-film transistor including an active layer, a gate electrode comprising a first electrode and a second electrode on the first electrode, and source and drain electrodes; an organic light-emitting device including a pixel electrode electrically connected to the thin-film transistor and including nano-Ag, an intermediate layer comprising a light-emitting layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode; and a pad electrode formed on the same plane as and formed of the same material as the first electrode in a pad area outside of a light-emitting area.

Abstract translation: 一种有机发光显示装置及其制造方法。 有机发光显示装置包括：包括有源层的薄膜晶体管，在第一电极上包括第一电极和第二电极的栅电极以及源极和漏极; 包括与薄膜晶体管电连接并且包括纳米Ag的像素电极的有机发光器件，包括发光层的中间层和覆盖中间层并且面向像素电极的相对电极; 以及焊盘电极，其在与发光区域外的焊盘区域中与第一电极相同的材料形成在同一平面上并由其形成。

公开(公告)号：US20120286281A1

公开(公告)日：2012-11-15

申请号：US13239202

申请日：2011-09-21

Applicant: Chun-Gi You

Inventor： Chun-Gi You

IPC: H01L33/02

CPC classification number: H01L27/3248 ,  H01L27/1255 ,  H01L27/3246 ,  H01L51/56 ,  H01L2227/323

Abstract: An organic light-emitting display device includes a thin film transistor (TFT) including an active layer, a gate electrode comprising a first electrode and a second electrode, a source electrode, and a drain electrode, a photoresist layer on the source electrode and the drain electrode, a pixel electrode electrically coupled to the TFT, comprising a same material as the first electrode, and at a same layer as the first electrode, a pixel defining layer having a hole exposing the pixel electrode, the pixel defining layer covering the photoresist layer, an intermediate layer on the pixel electrode and comprising a light-emitting layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode.

Abstract translation: 一种有机发光显示装置，包括：包括有源层的薄膜晶体管（TFT），包括第一电极和第二电极的栅电极，源电极和漏电极，源电极上的光致抗蚀剂层和 漏电极，电耦合到TFT的像素电极，包括与第一电极相同的材料，并且与第一电极相同的层，具有暴露像素电极的孔的像素限定层，覆盖光致抗蚀剂的像素限定层 层，像素电极上的中间层，并且包括发光层，以及覆盖中间层并且面向像素电极的相对电极。