公开(公告)号：US10658496B2

公开(公告)日：2020-05-19

申请号：US16264654

申请日：2019-01-31

Applicant: Chongqing University

Inventor： Zhi Lin ,  Qi Yuan ,  Shu Han ,  Shengdong Hu ,  Jianlin Zhou ,  Fang Tang ,  Xichuan Zhou

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/36 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

Abstract: The present disclosure relates to a high-speed superjunction lateral insulated gate bipolar transistor, and belongs to the technical field of semiconductor power devices. Fast turn-off can be achieved by replacing the lightly doped substrate of the existing bulk silicon superjunction lateral insulated gate bipolar transistor with heavily doped substrate, breakdown voltage of the device is ensured by reasonably setting the total number of impurities in each drift region of the over junction-sustaining voltage layer, and further application thereof in integrated circuits is realized by providing the semiconductor second substrate region and the semiconductor isolation region. A high speed superjunction laterally insulated gate bipolar transistor according to the present disclosure solves the contradiction between cost of the superjunction laterally insulated gate bipolar transistor and achievement of fast turn-off on a bulk silicon substrate.