公开(公告)号：US20200350178A1

公开(公告)日：2020-11-05

申请号：US16901210

申请日：2020-06-15

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Jong Mun Kim ,  Maximillian Clemons ,  Minrui Yu ,  Mehul Naik ,  Chentsau Ying

IPC: H01L21/3213

Abstract: Exemplary methods of etching semiconductor substrates may include flowing a halogen-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having a conductive material and an overlying mask material. The conductive material may be characterized by a first surface in contact with the mask material, and the mask material may define an edge region of the conductive material. The methods may include contacting the edge region of the conductive material with the halogen-containing precursor and the oxygen-containing precursor. The methods may include etching in a first etching operation the edge region of the conductive material to a partial depth through the conductive material to produce a footing of conductive material protruding along the edge region of the conductive material. The methods may also include removing the footing of conductive material in a second etching operation.

公开(公告)号：US11901222B2

公开(公告)日：2024-02-13

申请号：US16792646

申请日：2020-02-17

Applicant: Applied Materials, Inc.

Inventor： Maximillian Clemons ,  Nikolaos Bekiaris ,  Srinivas D. Nemani

IPC: H01L21/768 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/76837 ,  H01J37/32009 ,  H01L21/02271 ,  H01J2237/3321

Abstract: Generally, examples described herein relate to methods and processing systems for performing multiple processes in a same processing chamber on a flowable gap-fill film deposited on a substrate. In an example, a semiconductor processing system includes a processing chamber and a system controller. The system controller includes a processor and memory. The memory stores instructions, that when executed by the processor cause the system controller to: control a first process within the processing chamber performed on a substrate having thereon a film deposited by a flowable process, and control a second process within the process chamber performed on the substrate having thereon the film. The first process includes stabilizing bonds in the film to form a stabilized film. The second process includes densifying the stabilized film.

公开(公告)号：US10685849B1

公开(公告)日：2020-06-16

申请号：US16400737

申请日：2019-05-01

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Jong Mun Kim ,  Maximillian Clemons ,  Minrui Yu ,  Mehul Naik ,  Chentsau Ying

IPC: H01L21/321 ,  H01L21/3213

Abstract: Exemplary methods of etching semiconductor substrates may include flowing a halogen-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having a conductive material and an overlying mask material. The conductive material may be characterized by a first surface in contact with the mask material, and the mask material may define an edge region of the conductive material. The methods may include contacting the edge region of the conductive material with the halogen-containing precursor and the oxygen-containing precursor. The methods may include etching in a first etching operation the edge region of the conductive material to a partial depth through the conductive material to produce a footing of conductive material protruding along the edge region of the conductive material. The methods may also include removing the footing of conductive material in a second etching operation.

公开(公告)号：US11289342B2

公开(公告)日：2022-03-29

申请号：US16901210

申请日：2020-06-15

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Jong Mun Kim ,  Maximillian Clemons ,  Minrui Yu ,  Mehul Naik ,  Chentsau Ying

IPC: H01L21/321 ,  H01L21/3213

Abstract: Exemplary methods of etching semiconductor substrates may include flowing a halogen-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having a conductive material and an overlying mask material. The conductive material may be characterized by a first surface in contact with the mask material, and the mask material may define an edge region of the conductive material. The methods may include contacting the edge region of the conductive material with the halogen-containing precursor and the oxygen-containing precursor. The methods may include etching in a first etching operation the edge region of the conductive material to a partial depth through the conductive material to produce a footing of conductive material protruding along the edge region of the conductive material. The methods may also include removing the footing of conductive material in a second etching operation.

公开(公告)号：US10916433B2

公开(公告)日：2021-02-09

申请号：US16366539

申请日：2019-03-27

Applicant: Applied Materials, Inc.

Inventor： He Ren ,  Maximillian Clemons ,  Mei-Yee Shek ,  Minrui Yu ,  Bencherki Mebarki ,  Mehul B. Naik ,  Chentsau Ying ,  Srinivas D. Nemani

IPC: H01L21/285 ,  H01L21/32 ,  H01L21/768 ,  C23C14/04 ,  C23C14/06 ,  C23C14/35 ,  C23C14/22 ,  C23C14/58 ,  H01L29/45 ,  H01L21/3205 ,  H01L23/532

Abstract: Methods for forming low resistivity metal silicide interconnects using one or a combination of a physical vapor deposition (PVD) process and an anneal process are described herein. In one embodiment, a method of forming a plurality of wire interconnects includes flowing a sputtering gas into a processing volume of a processing chamber, applying a power to a target disposed in the processing volume, forming a plasma in a region proximate to the sputtering surface of the target, and depositing the metal and silicon layer on the surface of the substrate. Herein, the first target comprises a metal silicon alloy and a sputtering surface thereof is angled with respect to a surface of the substrate at between about 10° and about 50°.

公开(公告)号：US10704141B2

公开(公告)日：2020-07-07

申请号：US16383354

申请日：2019-04-12

Applicant: Applied Materials, Inc.

Inventor： Sultan Malik ,  Srinivas D. Nemani ,  Qiwei Liang ,  Adib Khan ,  Maximillian Clemons

IPC: C23C16/44 ,  C23C16/40 ,  C23C16/22 ,  C23C16/30 ,  H01J37/32 ,  C23C16/24 ,  C23C16/455

Abstract: Embodiments of the systems and methods herein are directed towards forming, via ALD or CVD, a protective film in-situ on a plurality of interior components of a process chamber. The interior components coated with the protective film include a chamber sidewall, a chamber bottom, a substrate support pedestal, a showerhead, and a chamber top. The protective film can be of various compositions including amorphous Si, carbosilane, polysilicon, SiC, SiN, SiO2, Al2O3, AlON, HfO2, or Ni3Al, and can vary in thickness from about 80 nm to about 250 nm.

公开(公告)号：US10566188B2

公开(公告)日：2020-02-18

申请号：US16035983

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Maximillian Clemons ,  Michel Ranjit Frei ,  Mahendra Pakala ,  Mehul B. Naik ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/00 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to a film treatment process. In one embodiment, a transition metal oxide layer including a dopant is deposited on a substrate. After the doped transition metal oxide layer is deposited, a high pressure annealing process is performed on the doped transition metal oxide layer to densify the doped transition metal oxide without outgassing of the dopant. The high pressure annealing process is performed in an ambient environment including the dopant and at a pressure greater than 1 bar.