公开(公告)号：US12136538B2

公开(公告)日：2024-11-05

申请号：US17505194

申请日：2021-10-19

Applicant: Applied Materials, Inc.

Inventor： Changling Li ,  Lai Zhao ,  Gaku Furuta ,  Soo Young Choi ,  Robin L. Tiner ,  David Atchley ,  Ganesh Babu Chandrasekaran

IPC: H01J37/32 ,  B23B35/00 ,  C23C16/455 ,  C23C16/50

Abstract: A diffuser includes a front-side gradient surface formed from a diffuser block, a back-side gradient surface formed from the diffuser block, and opening structures formed from the front-side gradient surface to the back-side gradient surface. Each opening structure includes a conical opening having a first end along the front-side gradient surface and a second end corresponding to an apex at a depth within the diffuser block, and a cylindrical opening formed from the depth to the back-side gradient surface. The opening structures are arranged in rows including a first set of rows and a second set of rows alternately positioned along a length of the diffuser block.

公开(公告)号：US12076763B2

公开(公告)日：2024-09-03

申请号：US16007876

申请日：2018-06-13

Applicant: Applied Materials, Inc.

Inventor： Yujia Zhai ,  Lai Zhao ,  Xiangxin Rui ,  Dong-Kil Yim ,  Tae Kyung Won ,  Soo Young Choi

IPC: B08B7/00 ,  B08B9/00 ,  C23C16/44 ,  H01J37/32 ,  H01L21/02 ,  H01L21/687 ,  H01L27/12 ,  H01L29/49 ,  H01L49/02

CPC classification number: B08B7/0035 ,  B08B9/00 ,  C23C16/4405 ,  H01J37/32082 ,  H01L27/1255 ,  H01L29/4908 ,  H01J2237/335 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/68742 ,  H01L28/40

Abstract: In one implementation, a method for cleaning a processing chamber is provided. The method comprises introducing a reactive species into a processing chamber having a residual high-k dielectric material formed on one or more interior surfaces of the processing chamber. The reactive species is formed from a halogen-containing gas mixture and the one or more interior surfaces include at least one surface having a coating material formed thereon. The method further comprises reacting the residual high-k dielectric material with the reactive species to form a volatile product. The method further comprises removing the volatile product from the processing chamber. The removal rate of the residual high-k dielectric material is greater than a removal rate of the coating material. The high-k dielectric material is selected from zirconium dioxide (ZrO2) and hafnium dioxide (HfO2). The coating material includes a compound selected from alumina (Al2O3), yttrium-containing compounds, and combinations thereof.

公开(公告)号：US11894396B2

公开(公告)日：2024-02-06

申请号：US17647404

申请日：2022-01-07

Applicant: Applied Materials, Inc.

Inventor： Xiangxin Rui ,  Lai Zhao ,  Jrjyan Jerry Chen ,  Soo Young Choi ,  Yujia Zhai

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78693

Abstract: Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.

公开(公告)号：US11670722B2

公开(公告)日：2023-06-06

申请号：US17805161

申请日：2022-06-02

Applicant: Applied Materials, Inc.

Inventor： Jianheng Li ,  Lai Zhao ,  Yujia Zhai ,  Soo Young Choi

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/45 ,  H01L27/32 ,  H01L51/05 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L27/1225 ,  H01L27/3244 ,  H01L29/45 ,  H01L51/0512 ,  H01L51/0525 ,  H01L29/66969 ,  H01L2227/323

Abstract: Embodiments described herein provide thin film transistors (TFTs) and processes to reduce plasma induced damage in TFTs. In one embodiment, a buffer layer is disposed over a substrate and a semiconductor layer is disposed over the buffer layer. A gate dielectric layer is disposed over the semiconductor layer. The gate dielectric layer contacts the semiconductor layer at an interface. The gate electrode 204 is disposed over the gate dielectric layer. The gate dielectric layer has a Dit of about 5e10 cm−2eV−1 to about 5e11 cm−2eV−1 and a hysteresis of about 0.10 V to about 0.30 V improve performance capability of the TFT while having a breakdown field between about 6 MV/cm and about 10 MV/cm.

公开(公告)号：US20240344198A1

公开(公告)日：2024-10-17

申请号：US18630981

申请日：2024-04-09

Applicant: Applied Materials, Inc.

Inventor： Guangwei Sun ,  Jeffrey A. Kho ,  Lai Zhao

IPC: C23C16/455

CPC classification number: C23C16/45559 ,  C23C16/45544

Abstract: An assembly includes a backing plate and a diffuser plate configured to be disposed under the backing plate. The diffuser plate forms purge holes in a first region of the diffuser plate between a diffuser plate upper surface and a diffuser plate lower surface. The diffuser plate forms perforated area holes in a second region of the diffuser plate between the diffuser plate upper surface and the diffuser plate lower surface. Each of the perforated area holes has a first width at the diffuser plate upper surface and a second width at the diffuser plate lower surface. The second width is larger than the first width.

公开(公告)号：US12080725B2

公开(公告)日：2024-09-03

申请号：US18221285

申请日：2023-07-12

Applicant: Applied Materials, Inc.

Inventor： Xiangxin Rui ,  Lai Zhao ,  Jrjyan Jerry Chen ,  Soo Young Choi ,  Yujia Zhai

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L49/02

CPC classification number: H01L27/1255 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1262 ,  H01L28/55 ,  H01L29/4908 ,  H01L29/78675

Abstract: Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.

公开(公告)号：US11101338B2

公开(公告)日：2021-08-24

申请号：US16243314

申请日：2019-01-09

Applicant: Applied Materials, Inc.

Inventor： Jung Bae Kim ,  Dong-Kil Yim ,  Soo Young Choi ,  Lai Zhao

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3233

Abstract: Disclosed herein is a sub-pixel circuit for a display device. The sub-pixel circuit has a driving TFT and at least one switching TFT. The at least one switching TFT is an oxide TFT. The sub-pixel circuit additionally has at least one storage capacitor wherein the storage capacitor has a capacitance between about 1 fF and about 55 fF.

公开(公告)号：US10748759B2

公开(公告)日：2020-08-18

申请号：US16248265

申请日：2019-01-15

Applicant: Applied Materials, Inc.

Inventor： Jianheng Li ,  Lai Zhao ,  Soo Young Choi

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66

Abstract: The present disclosure relates to an improved large area substrate semiconductor device having a high density passivation layer, and method of fabrication thereof. More specifically, a high density SiN passivation layer is formed by plasma enhanced chemical vapor deposition of silane and nitrogen gases at low temperatures. Argon is added as a diluent gas in order to increase SiN passivation layer film density and overall film quality.

公开(公告)号：US10697063B2

公开(公告)日：2020-06-30

申请号：US14610489

申请日：2015-01-30

Applicant: Applied Materials, Inc.

Inventor： Lai Zhao ,  Gaku Furuta ,  Qunhua Wang ,  Robin L. Tiner ,  Beom Soo Park ,  Soo Young Choi ,  Sanjay D. Yadav

IPC: C23C16/00 ,  C23C16/455 ,  H01J37/32 ,  C23C16/458

Abstract: The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.

公开(公告)号：US20250046578A1

公开(公告)日：2025-02-06

申请号：US18915480

申请日：2024-10-15

Applicant: Applied Materials, Inc.

Inventor： Changling Li ,  Lai Zhao ,  Gaku Furuta ,  Soo Young Choi ,  Robin L. Tiner ,  David Atchley ,  Ganesh Babu Chandrasekaran

IPC: H01J37/32 ,  B23B35/00 ,  C23C16/455 ,  C23C16/50

Abstract: A method can include removing material from a first side of a diffuser block to form a back-side gradient surface of a diffuser, wherein the back-side gradient surface is a first concave surface, after removing the material from the first side, removing material from a second side of the diffuser block to form a front-side gradient surface of the diffuser, wherein the front-side gradient surface is a second concave surface, and forming a plurality of opening structures through the front-side gradient surface to the back-side gradient surface.