公开(公告)号：US20210202763A1

公开(公告)日：2021-07-01

申请号：US17202212

申请日：2021-03-15

Applicant: Array Photonics, Inc.

Inventor： Aymeric MAROS ,  Ferran Suarez ,  Jacob Thorp ,  Michael Sheldon ,  Ting Liu

IPC: H01L31/0304 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0725 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46 ,  H01L33/60 ,  H01S5/183 ,  H01S5/30

Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.

公开(公告)号：US10916675B2

公开(公告)日：2021-02-09

申请号：US16282762

申请日：2019-02-22

Applicant: ARRAY PHOTONICS, INC.

Inventor： Ferran Suarez ,  Ting Liu ,  Homan B. Yuen ,  David Taner Bilir ,  Arsen Sukiasyan ,  Jordan Lang

IPC: H01L21/00 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/0304 ,  H01L31/0687

Abstract: Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.

公开(公告)号：US10930808B2

公开(公告)日：2021-02-23

申请号：US16018917

申请日：2018-06-26

Applicant: ARRAY PHOTONICS, INC.

Inventor： Ferran Suarez ,  Ting Liu ,  Arsen Sukiasyan ,  Ivan Hernandez ,  Jordan Lang ,  Radek Roucka ,  Sabeur Siala ,  Aymeric Maros

IPC: H01L31/0687 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/20 ,  H01L31/078

Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.

公开(公告)号：US11271122B2

公开(公告)日：2022-03-08

申请号：US16812668

申请日：2020-03-09

Applicant: ARRAY PHOTONICS, INC.

Inventor： Radek Roucka ,  Sabeur Siala ,  Aymeric Maros ,  Ting Liu ,  Ferran Suarez ,  Evan Pickett

IPC: H01L31/0304 ,  H01L27/144 ,  H01L31/18 ,  H01L33/30

Abstract: Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 μm.

公开(公告)号：US10991835B2

公开(公告)日：2021-04-27

申请号：US16535874

申请日：2019-08-08

Applicant: ARRAY PHOTONICS, INC.

Inventor： Aymeric Maros ,  Ferran Suarez ,  Jacob Thorp ,  Michael Sheldon ,  Ting Liu

IPC: H01L31/0304 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0725 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46 ,  H01L33/60 ,  H01S5/183 ,  H01S5/30

Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.