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    Light emitting diode having N-face GaN with roughened surface
    3.
    发明授权
    Light emitting diode having N-face GaN with roughened surface 有权
    具有粗糙表面的N面GaN发光二极管

    公开(公告)号：US08912557B2

    公开(公告)日：2014-12-16

    申请号：US13932178

    申请日：2013-07-01

    Applicant: Advanced Optoelectronic Technology, Inc.

    Inventor： Tzu-Chien Hung ,  Chia-Hui Shen

    IPC: H01L33/00 ,  H01L33/22 ,  H01L33/32 ,  H01L21/00

    CPC classification number: H01L33/325 ,  H01L33/0095 ,  H01L33/22

    Abstract: An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer. The first n-type GaN layer, the connecting layer, and the second n-type GaN layer are formed on the substrate in sequence. The connecting layer is etchable by alkaline solution, and a bottom surface of the second n-type GaN layer facing towards the connecting layer has a roughed exposed portion. The GaN on the bottom surface of the second n-type GaN layer is N-face GaN. A top surface of the second n-type GaN layer facing away from the connecting layer includes a first area and a second area. The light emitting layer and the p-type GaN layer are formed on the first area of the top surface of the second n-type GaN layer in sequence.

    Abstract translation: LED包括基板，第一n型GaN层，连接层，第二n型GaN层，发光层和p型GaN层。 第一n型GaN层，连接层和第二n型GaN层依次形成在基板上。 连接层可用碱性溶液蚀刻，并且第二n型GaN层的面向连接层的底表面具有粗糙的暴露部分。 第二n型GaN层的底面上的GaN为N面GaN。 第二n型GaN层的背离连接层的顶表面包括第一区域和第二区域。 依次在第二n型GaN层的顶表面的第一区域上形成发光层和p型GaN层。

    Light emitting diode
    4.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号：US08823020B2

    公开(公告)日：2014-09-02

    申请号：US13932197

    申请日：2013-07-01

    Applicant: Advanced Optoelectronic Technology, Inc.

    Inventor： Tzu-Chien Hung ,  Chia-Hui Shen

    IPC: H01L33/00 ,  H01L33/22 ,  H01L33/20

    CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/32

    Abstract: An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer formed on the substrate in sequence. The connecting layer is etchable by alkaline solution. A bottom surface of the second n-type GaN layer faces towards the connecting layer and has a roughened exposed portion. The GaN on the bottom surface of the second n-type GaN layer has an N-face polarity. A blind hole extends through the p-type GaN layer, the light emitting layer and the second n-type GaN layer to expose the connecting layer. An annular rough portion is formed on the bottom surface of the second n-type GaN layer and surrounds each blind hole.

    Abstract translation: LED包括依次形成在基板上的基板，第一n型GaN层，连接层，第二n型GaN层，发光层和p型GaN层。 连接层可用碱性溶液蚀刻。 第二n型GaN层的底面朝向连接层，并且具有粗糙化的暴露部分。 第二n型GaN层的底表面上的GaN具有N面极性。 盲孔延伸穿过p型GaN层，发光层和第二n型GaN层，以露出连接层。 在第二n型GaN层的底表面上形成环状的粗糙部分，并且围绕每个盲孔。

    Method for manufacturing a light emitting diode chip
    5.
    发明授权
    Method for manufacturing a light emitting diode chip 有权

    公开(公告)号：US10205048B1

    公开(公告)日：2019-02-12

    申请号：US15822227

    申请日：2017-11-27

    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

    Inventor： Po-Min Tu ,  Tzu-Chien Hung ,  Chia-Hui Shen ,  Chien-Shiang Huang ,  Chien-Chung Peng

    IPC: H01L33/38 ,  H01L33/00 ,  H01L33/44

    Abstract: A method for manufacturing a light emitting diode (LED) chip comprises steps of stacking together a first substrate, a buffer layer, an ultraviolet light (UV) shielding layer, and at least one LED chip in that sequence. An orthogonal projection of each LED chip on the UV shielding layer is located in the scope of the UV shielding layer, and a periphery of the UV shielding layer protrudes from a periphery of the orthogonal projection; mounting a side of each LED chip facing away from the first substrate on the second substrate with an adhesive layer; irradiating UV light from a side of the first substrate facing away from the LED chip, to separate the first substrate from the UV shielding layer; removing the UV light shielding layer, the second substrate, and the adhesive layer from each LED chip.

    Light emitting diode
    6.
    发明授权
    Light emitting diode 有权

    公开(公告)号：US10177280B2

    公开(公告)日：2019-01-08

    申请号：US15492164

    申请日：2017-04-20

    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

    Inventor： Chien-Chung Peng ,  Chien-Shiang Huang ,  Chia-Hui Shen ,  Tzu-Chien Hung

    IPC: H01L33/46 ,  H01L33/38 ,  H01L33/50 ,  H01L33/54 ,  H01L33/56

    Abstract: A light emitting diode include a light emitting chip, a first reflecting layer surrounding the light emitting diode chip, a first encapsulation layer and a second encapsulation layer covering on the light emitting diode chip. The light emitting chip has a light exiting surface, a first electrode and a second electrode. the first electrode and the second electrode are located opposite to the light exiting surface. Further, a second reflecting layer surrounds the periphery of the light emitting chip and also locates between the first encapsulation layer and the second encapsulation layer. A reflectivity of the first reflecting layer is greater than a reflectivity of the first reflecting layer. A bottom surface of the first electrode and the second electrode are exposed from the first reflecting layer.

    Method for manufacturing light emitting diode chip
    7.
    发明授权
    Method for manufacturing light emitting diode chip 有权
    制造发光二极管芯片的方法

    公开(公告)号：US09054270B2

    公开(公告)日：2015-06-09

    申请号：US13917651

    申请日：2013-06-14

    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

    Inventor： Tzu-Chien Hung ,  Chia-Hui Shen

    IPC: H01L21/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/64 ,  H01L33/36 ,  H01L21/60

    CPC classification number: H01L33/22 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/64 ,  H01L2021/60022 ,  H01L2924/18161 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2933/0075

    Abstract: A method for manufacturing a light emitting diode includes providing an epitaxial wafer having a substrate and an epitaxial layer allocated on the substrate. The epitaxial layer comprises a first semiconductor layer, an active layer, a second semiconductor layer sequentially allocated, and at least one blind hole penetrating the second semiconductor layer, the active layer and inside the first semiconductor layer; then a first electrode is formed on the first semiconductor layer inside the at least one blind hole and a second electrode is formed on the second semiconductor layer; thereafter a first supporting layer is allocated on the first electrode and a second supporting layer is allocated on the second electrode.

    Abstract translation: 一种制造发光二极管的方法包括提供具有衬底和分配在衬底上的外延层的外延晶片。 外延层包括顺序分配的第一半导体层，有源层，第二半导体层和贯穿第二半导体层，有源层和第一半导体层内的至少一个盲孔; 然后在所述至少一个盲孔内的所述第一半导体层上形成第一电极，并且在所述第二半导体层上形成第二电极; 此后在第一电极上分配第一支撑层，在第二电极上分配第二支撑层。

    Light emitting device
    9.
    发明授权
    Light emitting device 有权

    公开(公告)号：US10020426B1

    公开(公告)日：2018-07-10

    申请号：US15482986

    申请日：2017-04-10

    Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.

    Inventor： Chia-Hui Shen ,  Tzu-Chien Hung ,  Chien-Chung Peng ,  Chien-Shiang Huang ,  Chih-Jung Liu

    IPC: H01L33/00 ,  H01L33/48 ,  H01L33/60

    CPC classification number: H01L33/60 ,  H01L33/486

    Abstract: A light emitting device includes a base and a light emitting diode chip, the light emitting diode chip is formed on a top surface of the base, an outline of a projection of the light emitting diode chip projected on the top surface of the base is positioned in the top surface of the base. The light emitting device further includes a light reflecting portion, the light reflecting portion is formed on the top surface of the base, the light reflecting portion is defined around the light emitting diode chip, a height of the light reflecting portion is less than a height of the light emitting diode chip.

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