Abstract:
A system and method for interfacing a memory controller and a source synchronous memory utilizing a generic low power strobe. A set of double rate (2×) strobes can be generated by gating a continuous double rate clock in order to enable the set of double rate strobes only for duration of a data transfer from controller to the memory. The data and control from a SDR continuous single rate (1×) clock domain with respect to the memory controller can be moved to a set of double rate clock domain by sampling with the set of double rate strobes. The phase of the set of double rate strobes can be shifted in relation to the continuous single rate clock and a phase relationship of the generated synchronous signals to the memory can be dynamically switched by changing the phase of the set of double rate strobes. The set of double rate clock domain enables each bit-slice to be independently programmed to generate an output to the memory at each phase relative to the controller single rate clock.
Abstract:
A system and method for interfacing a memory controller and a source synchronous memory utilizing a generic low power strobe. A set of double rate (2×) strobes can be generated by gating a continuous double rate clock in order to enable the set of double rate strobes only for duration of a data transfer from controller to the memory. The data and control from a SDR continuous single rate (1×) clock domain with respect to the memory controller can be moved to a set of double rate clock domain by sampling with the set of double rate strobes. The phase of the set of double rate strobes can be shifted in relation to the continuous single rate clock and a phase relationship of the generated synchronous signals to the memory can be dynamically switched by changing the phase of the set of double rate strobes. The set of double rate clock domain enables each bit-slice to be independently programmed to generate an output to the memory at each phase relative to the controller single rate clock.
Abstract:
A non-linear common coarse delay system and method for delaying a data strobe in order to preserve fine delay accuracy and compensate PVT (Process, Voltage, and Temperature) variation effects. A common coarse delay and a fine delay can be initialized to a quarter-cycle delay for shifting a read output DQS (Data Queue Strobe) associated with a memory device in order to sample a read output DQ (Data Queue) within a physical layer. The fine delay can be programmed from minimum to maximum delay with fixed linear increments at each delay step in order to determine the resolution and accuracy of the delay. An optimum delay size of both the coarse and the fine delay can be determined based on an application slowest frequency of operation. A spare coarse delay and a functional coarse delay can be trained in association with a spare fine delay and the functional fine delay can be updated in order to monitor the process, voltage, and temperature variation effects.
Abstract:
A method for glitch-free updates of a standard cell-based programmable delay including the steps of (A) generating an output signal in response to an input signal and a plurality of first control signals and (B) generating the plurality of first control signals in response to the output signal and a plurality of second control signals. The output signal may include a delayed version of the input signal. An amount of delay between the input signal and the output signal may be determined based upon the plurality of first control signals.
Abstract:
A non-linear common coarse delay system and method for delaying a data strobe in order to preserve fine delay accuracy and compensate PVT (Process, Voltage, and Temperature) variation effects. A common coarse delay and a fine delay can be initialized to a quarter-cycle delay for shifting a read output DQS (Data Queue Strobe) associated with a memory device in order to sample a read output DQ (Data Queue) within a physical layer. The fine delay can be programmed from minimum to maximum delay with fixed linear increments at each delay step in order to determine the resolution and accuracy of the delay. An optimum delay size of both the coarse and the fine delay can be determined based on an application slowest frequency of operation. A spare coarse delay and a functional coarse delay can be trained in association with a spare fine delay and the functional fine delay can be updated in order to monitor the process, voltage, and temperature variation effects.
Abstract:
A method for glitch-free updates of a standard cell-based programmable delay including the steps of (A) generating an output signal in response to an input signal and a plurality of first control signals and (B) generating the plurality of first control signals in response to the output signal and a plurality of second control signals. The output signal may include a delayed version of the input signal. An amount of delay between the input signal and the output signal may be determined based upon the plurality of first control signals.
Abstract:
A memory interface physical layer macro including one or more embedded input/output (I/O) buffers, one or more memory interface hardmacros and control logic. The one or more embedded input/output (I/O) buffers support a plurality of I/O supply voltage levels. The one or more memory interface hardmacros are coupled to the one or more embedded I/O buffers. The control logic controls the one or more hardmacros and the one or more I/O buffers.
Abstract:
A memory interface subsystem including a write logic and a read logic. The write logic may be configured to communicate data from a memory controller to a memory. The read logic may be configured to communicate data from the memory to the memory controller. The read logic may comprise a plurality of physical read datapaths. Each of the physical read datapaths may be configured to receive (i) a respective portion of read data signals from the memory, (ii) a respective read data strobe signal associated with the respective portion of the received read data signals, (iii) a gating signal, (iv) a base delay signal and (v) an offset delay signal.
Abstract:
A memory interface physical layer macro including one or more embedded input/output (I/O) buffers, one or more memory interface hardmacros and control logic. The one or more embedded input/output (I/O) buffers support a plurality of I/O supply voltage levels. The one or more memory interface hardmacros are coupled to the one or more embedded I/O buffers. The control logic controls the one or more hardmacros and the one or more I/O buffers.
Abstract:
A memory interface subsystem including a write logic and a read logic. The write logic may be configured to communicate data from a memory controller to a memory. The read logic may be configured to communicate data from the memory to the memory controller. The read logic may comprise a plurality of physical read datapaths. Each of the physical read datapaths may be configured to receive (i) a respective portion of read data signals from the memory, (ii) a respective read data strobe signal associated with the respective portion of the received read data signals, (iii) a gating signal, (iv) a base delay signal and (v) an offset delay signal.