公开(公告)号：US09306056B2

公开(公告)日：2016-04-05

申请号：US12610148

申请日：2009-10-30

Applicant: Deva Pattanayak ,  King Owyang ,  Mohammed Kasem ,  Kyle Terrill ,  Reuven Katraro ,  Kuo-In Chen ,  Calvin Choi ,  Qufei Chen ,  Ronald Wong ,  Kam Hong Lui ,  Robert Xu

Inventor： Deva Pattanayak ,  King Owyang ,  Mohammed Kasem ,  Kyle Terrill ,  Reuven Katraro ,  Kuo-In Chen ,  Calvin Choi ,  Qufei Chen ,  Ronald Wong ,  Kam Hong Lui ,  Robert Xu

IPC: H01L23/48 ,  H01L29/78 ,  H01L23/00 ,  H01L29/417 ,  H01L29/66 ,  H01L29/45

CPC classification number: H01L29/7809 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/456 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/06051 ,  H01L2224/13007 ,  H01L2224/13014 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Abstract translation: 半导体器件（例如，倒装芯片）包括通过中间层与漏极接触分离的衬底层。 通过中间层的沟槽状馈通元件用于在器件工作时电连接漏极接触和衬底层。

公开(公告)号：US20110101525A1

公开(公告)日：2011-05-05

申请号：US12610148

申请日：2009-10-30

Applicant: Deva Pattanayak ,  King Owyang ,  Mohammed Kasem ,  Kyle Terrill ,  Reuven Katraro ,  Kuo-In Chen ,  Calvin Choi ,  Qufei Chen ,  Ronald Wong ,  Kam Hong Lui ,  Robert Xu

Inventor： Deva Pattanayak ,  King Owyang ,  Mohammed Kasem ,  Kyle Terrill ,  Reuven Katraro ,  Kuo-In Chen ,  Calvin Choi ,  Qufei Chen ,  Ronald Wong ,  Kam Hong Lui ,  Robert Xu

IPC: H01L23/48 ,  H01L23/488 ,  H01L21/768

CPC classification number: H01L29/7809 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/456 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/06051 ,  H01L2224/13007 ,  H01L2224/13014 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

Abstract translation: 半导体器件（例如，倒装芯片）包括通过中间层与漏极接触分离的衬底层。 通过中间层的沟槽状馈通元件用于在器件工作时电连接漏极接触和衬底层。

公开(公告)号：US07344945B1

公开(公告)日：2008-03-18

申请号：US11023327

申请日：2004-12-22

Applicant: Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

Inventor： Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

IPC: H01L21/336

CPC classification number: H01L29/7813 ,  H01L29/407 ,  H01L29/781

Abstract: Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.

Abstract translation: 本发明的实施例提供了一种条纹或闭孔沟槽金属氧化物半导体场效应晶体管（TMOSFET）。 条状或闭孔TMOSFET包括源极区域，设置在源极区域上方的体区域，设置在身体区域上方的漂移区域，设置在漂移区域上方的漏极区域。 栅极区域设置在源极区域的上方并与身体区域相邻。 栅极绝缘体区域将栅极区域与源极区域，体区域，漂移区域和漏极区域电隔离。 身体区域电耦合到源区域。

公开(公告)号：US06906380B1

公开(公告)日：2005-06-14

申请号：US10846339

申请日：2004-05-13

Applicant: Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

Inventor： Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

IPC: H01L21/336 ,  H01L29/40 ,  H01L29/76 ,  H01L29/78 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/7813 ,  H01L29/407 ,  H01L29/781

Abstract: Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.

Abstract translation: 本发明的实施例提供了一种条纹或闭孔沟槽金属氧化物半导体场效应晶体管（TMOSFET）。 条状或闭孔TMOSFET包括源极区域，设置在源极区域上方的体区域，设置在身体区域上方的漂移区域，设置在漂移区域上方的漏极区域。 栅极区域设置在源极区域的上方并与身体区域相邻。 栅极绝缘体区域将栅极区域与源极区域，体区域，漂移区域和漏极区域电隔离。 身体区域电耦合到源区域。

公开(公告)号：US08183629B2

公开(公告)日：2012-05-22

申请号：US12050929

申请日：2008-03-18

Applicant: Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

Inventor： Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

IPC: H01L27/88

CPC classification number: H01L29/7813 ,  H01L29/407 ,  H01L29/781

Abstract: Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.

Abstract translation: 本发明的实施例涉及一种沟槽金属氧化物半导体场效应晶体管（TMOSFET）器件。 TMOSFET器件包括耦合到漏极侧栅极TMOSFET 1203的源极侧栅极TMOSFET。开关节点金属层将源极侧栅极TMOSFET的漏极耦合到漏极侧栅极TMOSFET的源极，使得 TMOSFET被封装成堆叠或横向设备。

公开(公告)号：US07704836B2

公开(公告)日：2010-04-27

申请号：US12080031

申请日：2008-03-31

Applicant: Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

Inventor： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

IPC: H01L21/336

CPC classification number: H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811

Abstract: In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.

Abstract translation: 在沟槽MOSFET中，沟槽的下部包含与外延层和半导体衬底绝缘但与源极区域电接触的掩埋源电极。 当MOSFET处于“关闭”状态时，掩埋源电极的偏置导致台面的“漂移”区域耗尽，增强了MOSFET阻止电流的能力。 因此，可以增加漂移区的掺杂浓度，从而降低MOSFET的导通电阻。 埋入式源极还降低了MOSFET的栅 - 漏电容，提高了MOSFET在高频下的工作能力。 衬底可以有利地包括由环形台面分隔开的多个环形沟槽和从源极金属区域分开的多个栅极金属腿中的中心区域向外延伸的栅极金属层。

公开(公告)号：US06875657B2

公开(公告)日：2005-04-05

申请号：US10106896

申请日：2002-03-26

Applicant: Christiana Yue ,  Mohamed N. Darwish ,  Frederick P. Giles ,  Kam Hong Lui ,  Kuo-In Chen ,  Kyle Terrill ,  Deva N. Pattanayak

Inventor： Christiana Yue ,  Mohamed N. Darwish ,  Frederick P. Giles ,  Kam Hong Lui ,  Kuo-In Chen ,  Kyle Terrill ,  Deva N. Pattanayak

IPC: H01L21/28 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/7813 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/28238 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4983 ,  H01L29/512 ,  H01L29/518 ,  H01L29/66621 ,  H01L29/7834

Abstract: A process for manufacturing a trench MIS device includes depositing a conformal nitride layer in the trench; etching the nitride layer to create an exposed area at the bottom of the trench; and heating the substrate and thereby growing an oxide layer in the exposed area. This process causes the mask layer to “lift off”, creating a “bird's beak” structure. This becomes a “transition region”, where the thickness of the oxide layer decreases gradually in a direction away from the exposed area. The method further includes diffusing a dopant into the substrate, the dopant forming a PN junction with a remaining portion of said substrate, and controlling the diffusion such that the PN junction intersects the trench in the transition region. Because the thickness of the oxide layer decreases gradually, the PN junction does not need to be located at a particular point, i.e., there is a margin of error. This improves the manufacturability of the device and enhances its breakdown characteristics.

Abstract translation: 用于制造沟槽MIS器件的工艺包括在沟槽中沉积共形氮化物层; 蚀刻氮化物层以在沟槽的底部产生暴露区域; 并加热衬底，从而在暴露区域中生长氧化物层。 该过程使掩模层“脱落”，形成“鸟的喙”结构。 这成为“过渡区域”，其中氧化物层的厚度在远离曝光区域的方向上逐渐减小。 该方法还包括将掺杂剂扩散到衬底中，掺杂剂与所述衬底的剩余部分形成PN结，并且控制扩散，使得PN结与过渡区域中的沟槽相交。 因为氧化物层的厚度逐渐减小，所以PN结不需要位于特定的位置，即存在误差范围。 这提高了器件的可制造性并增强了其击穿特性。

公开(公告)号：US06709930B2

公开(公告)日：2004-03-23

申请号：US10176570

申请日：2002-06-21

Applicant: Ben Chan ,  Kam Hong Lui ,  Christiana Yue ,  Ronald Wong ,  David Chang ,  Frederick P. Giles ,  Kyle Terrill ,  Mohamed N. Darwish ,  Deva Pattanayak ,  Robert Q. Xu ,  Kuo-in Chen

Inventor： Ben Chan ,  Kam Hong Lui ,  Christiana Yue ,  Ronald Wong ,  David Chang ,  Frederick P. Giles ,  Kyle Terrill ,  Mohamed N. Darwish ,  Deva Pattanayak ,  Robert Q. Xu ,  Kuo-in Chen

IPC: H01L21336

CPC classification number: H01L29/7813 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368

Abstract: A trench MOSFET is formed by creating a trench in a semiconductor substrate, then forming a barrier layer over a portion of the side wall of the trench. A thick insulating layer is deposited in the bottom of the trench. The barrier layer is selected such that the thick insulating layer deposits in the bottom of the trench at a faster rate than the thick insulating layer deposits on the barrier layer. Embodiments of the present invention avoid stress and reliability problems associated with thermal growth of insulating layers, and avoid problems with control of the shape and thickness of the thick insulating layer encountered when a thick insulating layer is deposited, then etched to the proper shape and thickness.

Abstract translation: 通过在半导体衬底中形成沟槽，然后在沟槽的侧壁的一部分上形成阻挡层来形成沟槽MOSFET。 在沟槽的底部沉积厚的绝缘层。 选择阻挡层使得厚的绝缘层以比绝缘层沉积在阻挡层上更快的速率沉积在沟槽的底部。 本发明的实施例避免了与绝缘层的热生长相关的应力和可靠性问题，并且避免了当沉积厚绝缘层时遇到的厚绝缘层的形状和厚度的控制问题，然后蚀刻到适当的形状和厚度 。

公开(公告)号：US20090050960A1

公开(公告)日：2009-02-26

申请号：US12050929

申请日：2008-03-18

Applicant: Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

Inventor： Deva Pattanayak ,  Jason (Jianhai) Qi ,  Yuming Bai ,  Kam-Hong Lui ,  Ronald Wong

IPC: H01L27/088

CPC classification number: H01L29/7813 ,  H01L29/407 ,  H01L29/781

Abstract: Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.

Abstract translation: 本发明的实施例涉及一种沟槽金属氧化物半导体场效应晶体管（TMOSFET）器件。 TMOSFET器件包括耦合到漏极侧栅极TMOSFET 1203的源极侧栅极TMOSFET。开关节点金属层将源极侧栅极TMOSFET的漏极耦合到漏极侧栅极TMOSFET的源极，因此 TMOSFET被封装成堆叠或横向设备。

公开(公告)号：US07183610B2

公开(公告)日：2007-02-27

申请号：US10836833

申请日：2004-04-30

Applicant: Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

Inventor： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

IPC: H01L29/76

CPC classification number: H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811

Abstract: In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.

Abstract translation: 在沟槽MOSFET中，沟槽的下部包含与外延层和半导体衬底绝缘但与源极区域电接触的掩埋源电极。 当MOSFET处于“关闭”状态时，掩埋源电极的偏置导致台面的“漂移”区域耗尽，增强了MOSFET阻止电流的能力。 因此，可以增加漂移区的掺杂浓度，从而降低MOSFET的导通电阻。 埋入式源极还降低了MOSFET的栅 - 漏电容，提高了MOSFET在高频下的工作能力。 衬底可以有利地包括由环形台面分隔开的多个环形沟槽和从源极金属区域分开的多个栅极金属腿中的中心区域向外延伸的栅极金属层。