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公开(公告)号：US09093616B2
公开(公告)日：2015-07-28
申请号：US13072371
申请日：2011-03-25
Applicant: Michael S. Leung , Eric J. Tarsa , James Ibbetson
Inventor： Michael S. Leung , Eric J. Tarsa , James Ibbetson
CPC classification number: H01L33/504 , H01L21/565 , H01L24/96 , H01L27/15 , H01L33/50 , H01L2224/2518 , H01L2924/12041 , H01L2924/181 , H01L2924/1815 , H01L2933/0041 , H01L2924/00
Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices.
Abstract translation: 一种用于涂覆多个半导体器件的方法和设备，其特别适用于涂覆含有转化颗粒的涂层材料的LED。 根据本发明的一种方法包括提供具有地层腔的模具。 多个半导体器件安装在模具形成腔内，并且可固化涂层材料被注入或以其它方式被引入到模具中以填充模具形成腔并且至少部分地覆盖半导体器件。 固化涂层材料，使得半导体器件至少部分地嵌入固化的涂层材料中。 具有嵌入式半导体器件的固化的涂层材料从形成腔中移除。 半导体器件被分离成使得每个半导体器件至少部分被固化的涂层材料层覆盖。 根据本发明的用于涂覆多个半导体器件的设备的一个实施例包括具有布置成保持半导体器件的形成空腔的模具外壳。 形成空腔也被布置成使得可固化的涂层材料可以注入并填充地层腔以至少部分地覆盖半导体器件。
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公开(公告)号：US09035328B2
公开(公告)日：2015-05-19
申请号：US13021496
申请日：2011-02-04
Applicant: Theodore D. Lowes , Eric J. Tarsa , Bernd P. Keller , David T. Emerson
Inventor： Theodore D. Lowes , Eric J. Tarsa , Bernd P. Keller , David T. Emerson
CPC classification number: G09F9/33 , G09F9/3026 , H01L25/0753 , H01L33/54 , H01L2924/0002 , H01L2924/00
Abstract: An LED component includes, according to a first embodiment, a monolithic substrate, an array of LED chips disposed on a surface of the substrate, and an optical lens overlying the LED chips and having a lens base attached to the substrate, where the LED chips are positioned to provide a peak emission shifted from a perpendicular centerline of the lens base. The LED component includes, according to a second embodiment, a monolithic substrate, an array of LED chips disposed on a surface of the substrate, and an array of optical lenses, each optical lens overlying at least one of the LED chips and having a lens base attached to the substrate, where at least one of the LED chips is positioned to provide a peak emission shifted from a perpendicular centerline of the respective lens base.
Abstract translation: 根据第一实施例，LED组件包括单片基板，设置在基板的表面上的LED芯片的阵列以及覆盖LED芯片并且具有附接到基板的透镜基板的光学透镜，其中LED芯片 定位成提供从透镜基座的垂直中心线偏移的峰值发射。 根据第二实施例，LED组件包括单片基板，设置在基板的表面上的LED芯片阵列和光学透镜阵列，每个光学透镜覆盖至少一个LED芯片并具有透镜 基底，其中至少一个LED芯片被定位成提供从相应透镜基底的垂直中心线偏移的峰值发射。
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公开(公告)号：US20100283077A1
公开(公告)日：2010-11-11
申请号：US12835366
申请日：2010-07-13
Applicant: David B. Slater, JR. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
Inventor： David B. Slater, JR. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
CPC classification number: H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
Abstract: Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.
Abstract translation: 发光二极管包括包含氮化镓基n型层，有源区和氮化镓基p型层的二极管区。 在氮化镓基n型层上提供衬底，并与二极管区域光学匹配。 衬底具有远离氮化镓基n型层的第一面，与氮化镓基n型层相邻的第二面和其间的侧壁。 侧壁的至少一部分是斜面的，以便倾斜地延伸到第一和第二面。 可以在与衬底相对的氮化镓基p型层上设置反射器。 此外，二极管区域可以比衬底的第二面宽，并且可以包括从第一面远离第一面和第二面的台面。
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公开(公告)号：US06614056B1
公开(公告)日：2003-09-02
申请号：US09721352
申请日：2000-11-21
Applicant: Eric J. Tarsa , Brian Thibeault , James Ibbetson , Michael Mack
Inventor： Eric J. Tarsa , Brian Thibeault , James Ibbetson , Michael Mack
IPC: H01L29205
Abstract: An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer, improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintaining the enhanced current injection. The invention is particularly applicable to LEDs having insulating substrates but can also reduce the series resistance of LEDs having conductive substrates. The improved structures comprise conductive fingers that form cooperating conductive paths that ensure that current spreads from the p-type and n-type contacts into the fingers and uniformly spreads though the oppositely doped layers. The current then spreads to the active layer to uniformly inject electrons and holes throughout the active layer, which recombine to emit light.
Abstract translation: 一种具有改进的电流扩展结构的LED，可以增强电流注入到LED的有源层，从而提高其功率和光通量。 当前的扩展结构可以用于比常规LED更大的LED，同时保持增强的电流注入。 本发明特别适用于具有绝缘基板的LED，但也可以降低具有导电基板的LED的串联电阻。 改进的结构包括形成协调的导电路径的导电指状物，其确保电流从p型和n型触点扩散到指状物中并且通过相对掺杂的层均匀地扩散。 电流然后扩散到有源层，以在整个有源层中均匀地注入电子和空穴，其重新发光。
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公开(公告)号：US08426881B2
公开(公告)日：2013-04-23
申请号：US12360216
申请日：2009-01-27
Applicant: David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
Inventor： David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC: H01L33/00
CPC classification number: H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.
Abstract translation: 发光二极管包括具有氮化镓基n型层，有源区和氮化镓基p型层的二极管区。 在氮化镓基p型层上设置第一反射层，在氮化镓系n型层上设置第二反射层。 还可以提供接合层，安装支架，引线接合和/或透明氧化物层。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20120280261A1
公开(公告)日：2012-11-08
申请号：US13100786
申请日：2011-05-04
Applicant: Eric J. Tarsa , Theodore D. Lowes , Bernd P. Keller
Inventor： Eric J. Tarsa , Theodore D. Lowes , Bernd P. Keller
CPC classification number: H01L33/20 , H01L24/32 , H01L2924/12041 , H01L2924/00
Abstract: A light emitting diode (LED) for achieving an asymmetric light output includes a multilayered structure comprising a p-n junction, where at least one layer of the multilayered structure comprises a surface configured to provide a peak emission in a direction away from a normal to a mounting surface, the surface being a top or bottom surface of the layer.
Abstract translation: 用于实现不对称光输出的发光二极管（LED）包括包括pn结的多层结构，其中至少一层多层结构包括被配置为在远离法线的方向上提供峰值发射的表面 表面，该表面是该层的顶部或底部表面。
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公开(公告)号：US20110169038A1
公开(公告)日：2011-07-14
申请号：US13072371
申请日：2011-03-25
Applicant: Michael S. Leung , Eric J. Tarsa , James Ibbetson
Inventor： Michael S. Leung , Eric J. Tarsa , James Ibbetson
CPC classification number: H01L33/504 , H01L21/565 , H01L24/96 , H01L27/15 , H01L33/50 , H01L2224/2518 , H01L2924/12041 , H01L2924/181 , H01L2924/1815 , H01L2933/0041 , H01L2924/00
Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices.
Abstract translation: 一种用于涂覆多个半导体器件的方法和设备，其特别适用于涂覆含有转化颗粒的涂层材料的LED。 根据本发明的一种方法包括提供具有地层腔的模具。 多个半导体器件安装在模具形成腔内，并且可固化涂层材料被注入或以其它方式被引入到模具中以填充模具形成腔并且至少部分地覆盖半导体器件。 固化涂层材料，使得半导体器件至少部分地嵌入固化的涂层材料中。 具有嵌入式半导体器件的固化的涂层材料从形成腔中移除。 半导体器件被分离成使得每个半导体器件至少部分被固化的涂层材料层覆盖。 根据本发明的用于涂覆多个半导体器件的设备的一个实施例包括具有布置成保持半导体器件的形成空腔的模具外壳。 形成空腔也被布置成使得可固化的涂层材料可以注入并填充地层腔以至少部分地覆盖半导体器件。
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公开(公告)号：US07915085B2
公开(公告)日：2011-03-29
申请号：US10666399
申请日：2003-09-18
Applicant: Michael S. Leung , Eric J. Tarsa , James Ibbetson
Inventor： Michael S. Leung , Eric J. Tarsa , James Ibbetson
IPC: H01L21/52
CPC classification number: H01L33/504 , H01L21/565 , H01L24/96 , H01L27/15 , H01L33/50 , H01L2224/2518 , H01L2924/12041 , H01L2924/181 , H01L2924/1815 , H01L2933/0041 , H01L2924/00
Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices.
Abstract translation: 一种用于涂覆多个半导体器件的方法和设备，其特别适用于涂覆含有转化颗粒的涂层材料的LED。 根据本发明的一种方法包括提供具有地层腔的模具。 多个半导体器件安装在模具形成腔内，并且可固化涂层材料被注入或以其它方式被引入到模具中以填充模具形成腔并且至少部分地覆盖半导体器件。 固化涂层材料，使得半导体器件至少部分地嵌入固化的涂层材料中。 具有嵌入式半导体器件的固化的涂层材料从形成腔中移除。 半导体器件被分离成使得每个半导体器件至少部分被固化的涂层材料层覆盖。 根据本发明的用于涂覆多个半导体器件的设备的一个实施例包括具有布置成保持半导体器件的形成空腔的模具外壳。 形成空腔也被布置成使得可固化的涂层材料可以注入并填充地层腔以至少部分地覆盖半导体器件。
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公开(公告)号：US20100323465A1
公开(公告)日：2010-12-23
申请号：US12862640
申请日：2010-08-24
Applicant: Michael S. Leung , Eric J. Tarsa , James Ibbetson
Inventor： Michael S. Leung , Eric J. Tarsa , James Ibbetson
CPC classification number: H01L33/504 , H01L21/565 , H01L24/96 , H01L27/15 , H01L33/50 , H01L2224/2518 , H01L2924/12041 , H01L2924/181 , H01L2924/1815 , H01L2933/0041 , H01L2924/00
Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices.
Abstract translation: 一种用于涂覆多个半导体器件的方法和设备，其特别适用于涂覆含有转化颗粒的涂层材料的LED。 根据本发明的一种方法包括提供具有地层腔的模具。 多个半导体器件安装在模具形成腔内，并且可固化涂层材料被注入或以其它方式被引入到模具中以填充模具形成腔并且至少部分地覆盖半导体器件。 固化涂层材料，使得半导体器件至少部分地嵌入固化的涂层材料中。 具有嵌入式半导体器件的固化的涂层材料从形成腔中移除。 半导体器件被分离成使得每个半导体器件至少部分被固化的涂层材料层覆盖。 根据本发明的用于涂覆多个半导体器件的设备的一个实施例包括具有布置成保持半导体器件的形成空腔的模具外壳。 形成空腔也被布置成使得可固化的涂层材料可以注入并填充地层腔以至少部分地覆盖半导体器件。
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公开(公告)号：US20080173884A1
公开(公告)日：2008-07-24
申请号：US11656759
申请日：2007-01-22
Applicant: Ashay Chitnis , James Ibbetson , Arpan Chakraborty , Eric J. Tarsa , Bernd Keller , James Seruto , Yankun Fu
Inventor： Ashay Chitnis , James Ibbetson , Arpan Chakraborty , Eric J. Tarsa , Bernd Keller , James Seruto , Yankun Fu
IPC: H01L33/00
CPC classification number: H01L33/62 , H01L23/3114 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/501 , H01L33/507 , H01L33/508 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
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