Invention Grant
- Patent Title: Semiconductor device and multiple gate field effect transistor
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Application No.: US14814487Application Date: 2015-07-30
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Publication No.: US09935196B2Publication Date: 2018-04-03
- Inventor: Hsiao-Tsung Yen , Yuh-Sheng Jean , Ta-Hsun Yeh
- Applicant: Realtek Semiconductor Corp.
- Applicant Address: TW HsinChu
- Assignee: Realtek Semiconductor Corp.
- Current Assignee: Realtek Semiconductor Corp.
- Current Assignee Address: TW HsinChu
- Agent Winston Hsu
- Priority: TW103126251A 20140731
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/423
Abstract:
The present invention provides a semiconductor device, which includes a substrate, a first gate electrode, a second gate electrode, a source region and a drain region, wherein the first gate electrode and the second gate electrode are embedded in the substrate respectively; the source region is formed in the substrate, and at least a portion of the source region is disposed between the first gate electrode and the second gate electrode; and the drain region is formed in the substrate, and at least a portion of the drain region is disposed between the first gate electrode and the second gate electrode.
Public/Granted literature
- US20160035887A1 SEMICONDUCTOR DEVICE AND MULTIPLE GATE FIELD EFFECT TRANSISTOR Public/Granted day:2016-02-04
Information query
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